CM75TF-24H

CM75TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six-IGBT IGBTMOD™ H-Series Module 75 Amperes/1200 Volts B D X QX QX Z - M5 THD (7 TYP.) S N Bu P Eu P Bv P Ev P BwP EwP P R L C N P P Bu N Eu N Bv N Ev N BwN EwN J TYP U N V W A K T G F U W AA M M E AA Y - DIA. (4 TYP.) .110 TAB H J V P BuP EuP u BvP EvP v BwP EwP w P Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery (135ns) Free-Wheel Diode □ High Frequency Operation (20-25kHz) □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM75TF-24H is a 1200V (VCES), 75 Ampere Six-IGBT IGBTMOD™ Power Module. Type CM Current Rating Amperes 75 VCES Volts (x 50) 24 BuN EuN N BvN EvN BwN EwN N Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N Inches 4.21 4.02 3.543± 0.01 3.15± 0.01 1.57 1.38 1.28 1.26 Max. 1.18 0.98 0.96 0.79 0.67 Millimeters 107.0 102.0 90.0± 0.25 80.0± 0.25 40.0 35.0 32.5 32.0 Max 30.0 25.0 24.5 20.0 17.0 Dimensions P Q R S T U V W X Y Z AA Inches 0.57 0.55 0.47 0.43 0.39 0.33 0.30 0.24 Rad. 0.24 0.22 M5 Metric 0.08 Millimeters 14.5 14.0 12.0 11.0 10.0 8.5 7.5 Rad. 6.0 6.0 5.5 M5 2.0 339 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75TF-24H Six-IGBT IGBTMOD™ H-Series Module 75 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage Collector Current Peak Collector Current Diode Forward Current Diode Forward Surge Current Power Dissipation Max. Mounting Torque M5 Terminal Screws Max. Mounting Torque M5 Mounting Screws Module Weight (Typical) V Isolation * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Symbol Tj Tstg VCES VGES IC ICM IF IFM Pd – – – VRMS CM75TF-24H –40 to 150 –40 to 125 1200 ± 20 75 150* 75 150* 600 17 17 830 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VFM Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 7.5mA, VCE = 10V IC = 75A, VGE = 15V IC = 75A, VGE = 15V, Tj = 150°C Total Gate Charge Diode Forward Voltage VCC = 600V, IC = 75A, VGS = 15V IE = 75A, VGS = 0V Min. – – 4.5 – – – – Typ. – – 6.0 2.5 2.25 375 – Max. 1.0 0.5 7.5 3.4** – – 3.4 Units mA µA Volts Volts Volts nC Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 75A, diE/dt = –150A/µs IE = 75A, diE/dt = –150A/µs VCC = 600V, IC = 75A, VGE1 = VGE2 = 15V, RG = 4.2Ω VGE = 0V, VCE = 10V, f = 1MHz Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 0.56 Max. 15 5.3 3 150 350 250 350 250 – Units nF nF nF ns ns ns ns ns Diode Reverse Recovery Time Diode Reverse Recovery Charge µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. – – – Typ. – – – Max. 0.21 0.47 0.025 Units °C/W °C/W °C/W 340 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75TF-24H Six-IGBT IGBTMOD™ H-Series Module 75 Amperes/1200 Volts OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 150 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 150 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 20V 15 5 VCE = 10V Tj = 25°C Tj = 125°C VGE = 15V Tj = 25°C Tj = 125°C 12 120 Tj = 25oC 11 120 4 90 10 90 3 60 60 2 30 7 9 8 30 1 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 0 30 60 90 120 150 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 103 Tj = 25°C Tj = 25°C IC = 150A EMITTER CURRENT, IE, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF) 102 8 102 101 Cies 6 IC = 75A 4 Coes 101 100 Cres 2 IC = 30A VGE = 0V f = 1MHz 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 100 0 0.8 1.6 2.4 3.2 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 REVERSE RECOVERY TIME, t rr, (ns) 103 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 75A tf SWITCHING TIME, (ns) 16 VCC = 400V VCC = 600V td(off) 12 102 td(on) tr VCC = 600V VGE = ±15V RG = 4.2Ω Tj = 125°C 102 t rr Irr 101 8 di/dt = -150A/µsec Tj = 25°C 4 101 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 101 100 101 EMITTER CURRENT, IE, (AMPERES) 100 102 0 0 150 300 450 600 GATE CHARGE, QG, (nC) 341 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75TF-24H Six-IGBT IGBTMOD™ H-Series Module 75 Amperes/1200 Volts NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.21°C/W 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.47°C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 342