CM75TU-12F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Trench Gate Design Six IGBTMOD™
75 Amperes/600 Volts
J S - NUTS (5 TYP)
CM N
K P
K R
T (4 TYP.)
P
GUP EUP GVP EVP GWP EWP
L BE
N
L
N
L M Q TC MEASURING POINT
TC MEASURING POINT
GUN EUN
GVN EVN
GWN EWN
U
V
W
J L N D A W - THICK x X - WIDE TAB (12 PLACES)
J L N L V
H C F G
P GUP RTC EUP U GUN RTC EUN N EVN GVN RTC EWN EVP V GWN RTC GVP RTC EWP W A GWP RTC
Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ UPS □ Battery Powered Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM75TU-12F is a 600V (VCES), 75 Ampere SixIGBT IGBTMOD™ Power Module.
Type CM Current Rating Amperes 75 VCES Volts (x 50) 12
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L Inches 4.02 3.58 3.15± 0.01 2.91± 0.01 0.16 1.02 0.31 0.79 0.39 0.43 Millimeters 102.0 91.0 80.0± 0.25 74.0± 0.25 4.0 26.0 8.1 20.0 10.0 11.0 Dimensions M N P Q R S T U V W X Inches 0.47 0.75 0.74 1.55 0.05 M4 0.22 Dia. 0.02 0.12 0.02 0.110 Millimeters 11.85 19.1 18.7 39.3 1.25 M4 5.5 Dia. 0.5 3.05 0.5 2.79
1.14 +0.04/-0.02 29.0 +1.0/-0.5
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75TU-12F Trench Gate Design Six IGBTMOD™ 75 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** Peak Emitter Current** Maximum Collector Dissipation (Tj < 150°C) Mounting Torque, M4 Main Terminal Mounting Torque, M5 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – – Viso CM75TU-12F -40 to 150 -40 to 125 600 ±20 75 150* 75 150* 290 15 31 570 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VCES, VCE = 0V IC = 7.5mA, VCE = 10V IC = 75A, VGE = 15V, Tj = 25°C IC = 75A, VGE = 15V, Tj = 125°C Total Gate Charge Emitter-Collector Voltage** VCC = 300V, IC = 75A, VGE = 15V IE = 75A, VGE = 0V Min. – – 5 – – – – Typ. – – 6 1.6 1.6 465 – Max. 1 20 7 2.2 – – 2.6 Units mA µA Volts Volts Volts nC Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75TU-12F Trench Gate Design Six IGBTMOD™ 75 Amperes/600 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Inductive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 300V, IC = 75A, VGE1 = VGE2 = 15V, RG = 8.3 , Inductive Load Switching Operation IE = 75A VCE = 10V, VGE = 0V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 1.4 Max. 20 1.4 0.75 100 80 300 250 150 – Units nf nf nf ns ns ns ns ns µC
Diode Reverse Recovery Time** Diode Reverse Recovery Charge**
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Thermal Resistance, Junction to Case Symbol Rth(j-c)Q Rth(j-c)D Rth(j-c)'Q Rth(c-f) Test Conditions Per IGBT 1/6 Module, Tc Reference Point per Outline Drawing Thermal Resistance, Junction to Case Per FWDi 1/6 Module, Tc Reference Point per Outline Drawing Thermal Resistance, Junction to Case Per IGBT 1/6 Module, Tc Reference Point Under Chip Contact Thermal Resistance Per Module, Thermal Grease Applied – 0.018 – °C/W
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min. –
Typ.
Max. 0.43
Units °C/W °C/W °C/W
–
–
0.9
0.29
3
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75TU-12F Trench Gate Design Six IGBTMOD™ 75 Amperes/600 Volts
OUTPUT CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
150
COLLECTOR CURRENT, IC, (AMPERES)
120 90
VGE = 20V 9
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
Tj = 25oC
11 15
10
3
9.5 VGE = 15V Tj = 25°C Tj = 125°C
5
Tj = 25°C
4 3
IC = 150A
2
60 30
8.5
2 1
1
IC = 75A IC = 30A
8
7.5
0 0 1 2 3 4
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
0 0 30 60 90 120 150
COLLECTOR-CURRENT, IC, (AMPERES)
0 0 6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
103
Tj = 25°C
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, IE, (AMPERES)
102
VGE = 0V Cies
103
td(off)
SWITCHING TIME, (ns)
102
101
102
tf td(on)
101
100
Coes Cres
101
tr
VCC = 300V VGE = ±15V RG = 8.3 Ω Tj = 125°C Inductive Load
100 0 1.0 2.0 3.0 4.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
10-1 10-1
100
101
102
100 100
101
102
103
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE, VGE
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi)
102
REVERSE RECOVERY TIME, trr, (ns)
102
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
101
10-3
10-2
10-1
100
101
IC = 75A
trr Irr
16
VCC = 200V
100
12 8 4
VCC = 300V
Per Unit Base Rth(j-c) = 0.43°C/W (IGBT) Rth(j-c) = 0.9°C/W (FWDi) Single Pulse TC = 25°C
101
VCC = 300V VGE = ±15V RG = 8.3 Ω Tj = 25°C Inductive Load
101
10-1
10-1
10-2
10-2
100 100
101
EMITTER CURRENT, IE, (AMPERES)
100 102
0 0
10-3 10-5
TIME, (s)
100 200 300 400 500 600 700
GATE CHARGE, QG, (nC)
10-4
10-3 10-3
4
4