CM75TU-12H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Six IGBTMOD™ U-Series Module
75 Amperes/600 Volts
A B F G E H E H G E R S 4 - Mounting Holes K L GuP EuP D GvP EvP GwP EwP GuN EuN GvN EvN u v w K J E 5 - M4 NUTS 0.110 - 0.5 Tab H E J H E N
C
TC Measured Point
TC Measured Point M GwN EwN
P Q
Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM75TU-12H is a 600V (VCES), 75 Ampere SixIGBT IGBTMOD™ Power Module.
Type CM Current Rating Amperes 75 VCES Volts (x 50) 12
P
GuP EuP U
GvP EvP V
GwP EwP W
GuN EuN N
GvN EvN
GwN EwN
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 4.02 3.15± 0.01 3.58 2.91± 0.01 0.43 0.79 0.39 0.75 0.79 Millimeters 102.0 80.0± 0.25 91.0 74.0± 0.25 11.0 20.0 10.0 19.1 20.0 Dimensions K L M N P Q R S Inches 0.05 0.74 1.55 0.12 0.32 1.02 0.47 0.22 Dia. Millimeters 1.25 18.7 39.3 3.05 8.1 26.0 11.85 5.5 Dia.
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75TU-12H Six IGBTMOD™ U-Series Module 75 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** Peak Emitter Current** Maximum Collector Dissipation (Tj < 150°C) Mounting Torque, M4 Main Terminal Mounting Torque, M5 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – – Viso CM75TU-12H -40 to 150 -40 to 125 600 ± 20 75 150* 75 150* 310 15 31 570 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 7.5mA, VCE = 10V IC = 75A, VGE = 15V, Tj = 25°C IC = 75A, VGE = 15V, Tj = 125°C Total Gate Charge Emitter-Collector Voltage* VCC = 300V, IC = 75A, VGE = 15V IE = 75A, VGE = 0V Min. – – 4.5 – – – – Typ. – – 6 2.4 2.6 150 – Max. 1 0.5 7.5 3.0 – – 2.6 Units mA µA Volts Volts Volts nC Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 300V, IC = 75A, VGE1 = VGE2 = 15V, RG = 8.3 , Resistive Load Switching Operation IE = 75A, diE/dt = -150A/µs IE = 75A, diE/dt = -150A/µs VCE = 10V, VGE = 0V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 0.18 Max. 6.6 3.6 1 100 250 200 300 160 – Units nf nf nf ns ns ns ns ns µC
Diode Reverse Recovery Time Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Rth(c-f) Test Conditions Per IGBT 1/6 Module Per Free-Wheel Diode 1/6 Module Per Module, Thermal Grease Applied Min. – – – Typ. – – 0.018 Max. 0.4 0.9 – Units °C/W °C/W °C/W
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75TU-12H Six IGBTMOD™ U-Series Module 75 Amperes/600 Volts
OUTPUT CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
150
COLLECTOR CURRENT, IC, (AMPERES)
125 V = 20V GE 100 75 50 25 0 0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
125 100 75 50 25 0 0
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
Tj = 25oC
15 14 13
150
VCE = 10V Tj = 25°C Tj = 125°C
5
VGE = 15V Tj = 25°C Tj = 125°C
4 3 2 1
12
11
10 9 8
0 4 8 12 16 20 0 40 80 120 160
GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
10
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
103
Tj = 25°C
EMITTER CURRENT, IE, (AMPERES)
Tj = 25°C
CAPACITANCE, Cies, Coes, Cres, (nF)
101
Cies
8
IC = 150A
102
100
Coes
6
IC = 75A
4 2
IC = 30A
101
10-1
Cres VGE = 0V f = 1MHz
0 0 4 8 12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
100 1.0
1.5
2.0
2.5
3.0
10-2 10-1
100
101
102
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL) di/dt = -150A/µsec Tj = 25°C
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE, VGE
103
REVERSE RECOVERY TIME, trr, (ns)
103
td(off)
102
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
IC = 75A
SWITCHING TIME, (ns)
tf
16 12 8 4
VCC = 200V VCC = 300V
102
td(on)
102
trr Irr
101
101
VCC = 300V VGE = ±15V RG = 8.3 Ω Tj = 125°C
tr
100 100
101
COLLECTOR CURRENT, IC, (AMPERES)
102
101 100
101
EMITTER CURRENT, IE, (AMPERES)
100 102
0 0 50 100 1500 200
GATE CHARGE, QG, (nC)
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75TU-12H Six IGBTMOD™ U-Series Module 75 Amperes/600 Volts
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE)
10-3 101
10-2
10-1
100
101
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi)
10-3 101
10-2
10-1
100
101
100
Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.4°C/W
100
Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.9°C/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3 10-5
TIME, (s)
10-4
10-3 10-3
10-3 10-5
TIME, (s)
10-4
10-3 10-3
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