FG1000BV-90DA

MITSUBISHI GATE TURN-OFF THYRISTORS FG1000BV-90DA HIGH POWER INVERTER USE PRESS PACK TYPE FG1000BV-90DA OUTLINE DRAWING Dimensions in mm GATE (WHITE) 390 ± 8 AUXILIARY CATHODE CONNECTOR (RED) q ITQRM Repetitive controllable on-state current ..........1000A q IT(AV) Average on-state current .......................400A q VDRM Repetitive peak off state voltage ..................4500V q Anode short type 26 ± 0.5 0.4 MIN 0.4 MIN φ 47 φ 3.5 DEPTH 2.2 ± 0.2 CATHODE TYPE NAME φ 47 φ 75 MAX ANODE φ 3.5 DEPTH 2.2 ± 0.2 APPLICATION Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters. MAXIMUM RATINGS Symbol VRRM VRSM VR(DC) VDRM VDSM VD(DC) + : VGK = –2V Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage+ Non-repetitive peak off-state voltage+ DC off-state voltage+ Parameter Repetitive controllable on-state current RMS on-state current Average on-state current Surge (non-repetitive) on-state current Current-squared, time integration Critical rate of rise of on-state current Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate reverse current Peak forward gate power dissipation Peak reverse gate power dissipation Average forward gate power dissipation Average reverse gate power dissipation Junction temperature Storage temperature Mounting force required Weight Voltage class 90DA 17 17 17 4500 4500 3600 Conditions VDM = 3375V, Tj = 125°C, CS = 0.7µF, LS = 0.3µH f = 60Hz, sine wave θ = 180°, Tf = 70°C One half cycle at 60Hz One cycle at 60Hz VD = 2250V, IGM = 20A, Tj = 125°C Ratings 1000 630 400 8.4 2.9 × 105 1000 10 17 60 500 240 15 45 100 –40 ~ +125 –40 ~ +150 12 ~ 15 530 Unit V V V V V V Unit A A A kA A2s A/µs V V A A W kW W W °C °C kN g Aug.1998 Symbol ITQRM IT(RMS) IT(AV) ITSM I2t diT/dt VFGM VRGM IFGM IRGM PFGM PRGM PFG(AV) PRG(AV) Tj Tstg — — Recommended value 13 Standard value MITSUBISHI GATE TURN-OFF THYRISTORS FG1000BV-90DA HIGH POWER INVERTER USE PRESS PACK TYPE ELECTRICAL CHARACTERISTICS Symbol VTM IRRM IDRM IRG dv/dt tgt tgq IGQM VGT IGT Rth(j-f) Parameter On-state voltage Repetitive peak reverse current Repetitive peak off-state current Reverse gate current Critical rate of rise of off-state voltage Turn-on time Turn-off time Peak gate turn-off current Gate trigger voltage Gate trigger current Thermal resistance Test conditions Tj = 125°C, ITM = 1000A, Instantaneous measurment Tj = 125°C, VRRM Applied Tj = 125°C, VDRM Applied, VGK = –2V Tj = 125°C, VRG = 17V Tj = 125°C, VD = 2250V, VGK = –2V Tj = 125°C, ITM = 1000A, IGM = 20A, VD = 2250V Tj = 125°C, ITM = 1000A, VDM = 3375V, diGQ/dt = –30A/µs VRG = 17V, CS = 0.7µF, LS = 0.3µH DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C Junction to fin Min — — — — 1000 — — — — — — Limits Typ — — — — — — — 330 — — — Max 4.0 100 100 100 — 10 20 Unit V mA mA mA V/µs µs µs A V mA °C/W — 1.5 2500 0.03 PERFORMANCE CURVES SURGE ON-STATE CURRENT (kA) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTIC 104 7 Tj = 125°C 5 3 2 103 7 5 3 2 102 7 5 3 2 101 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT 10 8 6 4 2 0 100 23 5 7 101 23 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN) 100 2 3 5 7101 0.050 THERMAL IMPEDANCE (°C/ W) 0.045 0.040 0.035 0.030 0.025 0.020 0.015 0.010 0.005 0 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 TIME (S) GATE CHARACTERISTICS 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 GATE VOLTAGE (V) VFGM = 10V PFG(AV) = 45W VGT = 1.5V PFGM = 240W Tj = 25°C IGT = 2500mA IFGM = 60A 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 GATE CURRENT (mA) Aug.1998 MITSUBISHI GATE TURN-OFF THYRISTORS FG1000BV-90DA HIGH POWER INVERTER USE PRESS PACK TYPE ON-STATE POWER DISSIPATION (W) MAXIMUM ON-STATE POWER DISSIPATION CHARACTERISTICS (SINGLE-PHASE HALF WAVE) 2000 1750 1500 FIN TEMPERATURE (°C) θ 360° RESISTIVE, LOAD θ = 30° 120° 90° 60° ALLOWABLE FIN TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 140 130 θ 360° RESISTIVE, INDUCTIVE LOAD 180° 120 110 100 90 80 70 θ = 30° 60° 1250 INDUCTIVE 1000 750 500 250 0 0 100 90° 120° 180° 200 300 400 60 0 100 200 300 400 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) ON-STATE POWER DISSIPATION (W) MAXIMUM ON-STATE POWER DISSIPATION CHARACTERISTICS (RECTANGULAR WAVE) 2000 1750 1500 60° 120° 90° 270° 180° DC ALLOWABLE FIN TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 140 130 FIN TEMPERATURE (°C) θ 360° RESISTIVE, INDUCTIVE LOAD 120 110 100 90 80 70 60 50 40 0 θ = 30° 60° 90° 1250 1000 750 500 250 0 0 θ = 30° θ 360° RESISTIVE, INDUCTIVE LOAD 120° 270° 180° DC 100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) 8000 GATE TRIGGER CURRENT (mA) TURN ON TIME tgt, TURN ON DELAY TIME td (µs) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE (TYPICAL) VD = 5 ~ 20V IT = 25 ~ 200A HALF SINE WAVE TURN ON TIME, TURN ON DELAY TIME VS. TURN ON GATE CURRENT (TYPICAL) 10.0 IT = 1000A, VD = 2250V diT/dt = 500A/µs diG/dt = 10A/µs Tj = 125°C 7000 6000 5000 4000 3000 2000 1000 0 –60 –20 20 8.0 tgt 6.0 4.0 td 2.0 60 100 140 0 0 10 20 30 40 50 JUNCTION TEMPERATURE (°C) TURN ON GATE CURRENT (A) Aug.1998 MITSUBISHI GATE TURN-OFF THYRISTORS FG1000BV-90DA HIGH POWER INVERTER USE PRESS PACK TYPE TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs) TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs) TURN OFF TIME, TURN OFF STORAGE TIME VS. TURN OFF CURRENT (TYPICAL) 25 VD = 2250V VDM = 3375V diGQ/dt = –30A/µs 20 VRG = 17V CS = 0.7µF LS = 0.3µH 15 Tj = 125°C TURN OFF TIME, TURN OFF STORAGE TIME VS. RATE OF RISE OF TURN OFF GATE CURRENT (TYPICAL) 50 VD = 2250V VDM = 3375V IT = 1000A VRG = 17V CS = 0.7µF LS = 0.3µH Tj = 125°C 40 tgq 30 ts 10 20 tgq 5 10 ts 0 200 400 600 800 1000 0 10 20 30 40 50 TURN OFF CURRENT (A) RATE OF RISE OF TURN OFF GATE CURRENT (A/µS) TURN OFF GATE CURRENT VS. TURN OFF CURRENT (TYPICAL) 500 TURN OFF GATE CURRENT (A) TURN OFF GATE CURRENT (A) 500 TURN OFF GATE CURRENT VS. RATE OF RISE OF GATE CURRENT (TYPICAL) 400 400 300 300 200 100 0 VD = 2250V VDM = 3375V diGQ/dt = –30A/µs VRG = 17V CS = 0.7µF LS = 0.3µH Tj = 125°C 200 100 200 400 600 800 1000 0 VD = 2250V VDM = 3375V IT = 1000A VRG = 17V CS = 0.7µF LS = 0.3µH Tj = 125°C 10 20 30 40 50 TURN OFF CURRENT (A) RATE OF RISE OF TURN OFF GATE CURRENT (A/µS) TURN ON SWITCHING ENERGY (MAXIMUM) 1.6 SWITCHING ENERGY Eon (J/P) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 200 400 600 800 VD = 2250V IGM = 25A diG/dt = 10A/µs CS = 0.7µF RS = 5Ω Tj = 125°C 200A/µs 100A/µs diT/dt = 300A/µs TURN OFF SWITCHING ENERGY (MAXIMUM) 3.0 SWITCHING ENERGY Eoff (J/P) 2.5 2.0 1.5 1.0 1000 1200 0.5 VD = 2250V VDM = 3375V diGQ/dt = –30A/µs VRG = 17V CS = 0.7µF LS = 0.3µH Tj = 125°C 200 400 600 800 1000 TURN ON CURRENT (A) TURN OFF CURRENT (A) Aug.1998