FG2000FX-50DA

MITSUBISHI GATE TURN-OFF THYRISTORS FG2000FX-50DA HIGH POWER INVERTER USE PRESS PACK TYPE FG2000FX-50DA OUTLINE DRAWING Dimensions in mm GATE (WHITE) 400 ± 8 AUXILIARY CATHODE CONNECTOR (RED) φ 63 ± 0.5 φ 3.5 DEPTH 2.2 ± 0.2 CATHODE TYPE NAME q ITQRM Repetitive controllable on-state current ...........2200A q IT(AV) Average on-state current .....................1050A q VDRM Repetitive peak off state voltage ...................2500V q Anode short type 26 ± 0.5 0.4 MIN 0.4 MIN φ 63±0.5 φ 93 MAX ANODE φ 3.5 DEPTH 2.2 ± 0.2 APPLICATION Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters. MAXIMUM RATINGS Symbol VRRM VRSM VR(DC) VDRM VDSM VD(DC) + : VGK = –2V Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage+ Non-repetitive peak off-state voltage+ DC off-state voltage+ Parameter Repetitive controllable on-state current RMS on-state current Average on-state current Surge (non-repetitive) on-state current Current-squared, time integration Critical rate of rise of on-state current Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate reverse current Peak forward gate power dissipation Peak reverse gate power dissipation Average forward gate power dissipation Average reverse gate power dissipation Junction temperature Storage temperature Mounting force required Weight Voltage class 50DA 17 17 17 2500 2500 2000 Conditions VDM = 1875V, Tj = 125°C, CS = 4.0µF, LS = 0.3µH f = 60Hz, sine wave θ = 180°, Tf = 73°C One half cycle at 60Hz One cycle at 60Hz VD = 1250V, IGM = 30A, Tj = 125°C Ratings 2200 1650 1050 16 10.5 × 105 1000 10 17 100 650 280 18 50 150 –40 ~ +125 –40 ~ +150 18 ~ 24 760 Unit V V V V V V Unit A A A kA A2s A/µs V V A A W kW W W °C °C kN g Aug.1998 Symbol ITQRM IT(RMS) IT(AV) ITSM I2t diT/dt VFGM VRGM IFGM IRGM PFGM PRGM PFG(AV) PRG(AV) Tj Tstg — — Recommended value 20 Standard value MITSUBISHI GATE TURN-OFF THYRISTORS FG2000FX-50DA HIGH POWER INVERTER USE PRESS PACK TYPE ELECTRICAL CHARACTERISTICS Symbol VTM IRRM IDRM IRG dv/dt tgt tgq IGQM VGT IGT Rth(j-f) Parameter On-state voltage Repetitive peak reverse current Repetitive peak off-state current Reverse gate current Critical rate of rise of off-state voltage Turn-on time Turn-off time Peak gate turn-off current Gate trigger voltage Gate trigger current Thermal resistance Test conditions Tj = 125°C, ITM = 2000A, Instantaneous measurment Tj = 125°C, VRRM Applied Tj = 125°C, VDRM Applied, VGK = –2V Tj = 125°C, VRG = 17V Tj = 125°C, VD = 1250V, VGK = –2V Tj = 125°C, ITM = 2200A, IGM = 30A, VD = 1250V Tj = 125°C, ITM = 2200A, VDM = 1875V, diGQ/dt = –30A/µs VRG = 17V, CS = 4.0µF, LS = 0.3µH DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C Junction to fin Min — — — — 1000 — — — — — — Limits Typ — — — — — — — 610 — — — Max 2.4 50 50 50 — 10 30 — 1.5 2500 0.017 Unit V mA mA mA V/µs µs µs A V mA °C/W PERFORMANCE CURVES SURGE ON-STATE CURRENT (kA) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTIC 104 7 Tj = 125°C 5 3 2 103 7 5 3 2 102 7 5 3 2 101 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT 20 16 12 8 4 0 100 23 5 7 101 23 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN) 100 2 3 5 7101 0.020 GATE CHARACTERISTICS THERMAL IMPEDANCE (°C/W) GATE VOLTAGE (V) 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 VFGM = 10V 0.016 PFGM = 280W PFG(AV) = 50W VGT = 1.5V 0.012 0.008 Tj = 25°C IGT = 2500mA IFGM = 100A 0.004 0 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 TIME (S) 10–1 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 GATE CURRENT (mA) Aug.1998 MITSUBISHI GATE TURN-OFF THYRISTORS FG2000FX-50DA HIGH POWER INVERTER USE PRESS PACK TYPE ON-STATE POWER DISSIPATION (W) MAXIMUM ON-STATE POWER DISSIPATION CHARACTERISTICS (SINGLE-PHASE HALF WAVE) 4000 3500 3000 ALLOWABLE FIN TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 150 FIN TEMPERATURE (°C) θ 60° 90° 120° 180° 140 130 120 110 100 90 80 70 θ = 30° θ 360° RESISTIVE, INDUCTIVE LOAD 360° RESISTIVE, 2500 INDUCTIVE LOAD 2000 1500 1000 500 0 0 θ = 30° 60° 90° 120° 180° 300 600 900 1200 60 0 200 400 600 800 1000 1200 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) ON-STATE POWER DISSIPATION (W) MAXIMUM ON-STATE POWER DISSIPATION CHARACTERISTICS (RECTANGULAR WAVE) 4000 DC ALLOWABLE FIN TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 130 120 3500 3000 2500 2000 1500 1000 500 0 0 500 1000 60° θ = 30° 180° 120° 90° 270° FIN TEMPERATURE (°C) θ 360° RESISTIVE, INDUCTIVE LOAD 110 100 90 80 70 60 θ 360° RESISTIVE, INDUCTIVE LOAD θ = 30° 60° 90° 180° 120° 270° DC 1500 2000 50 0 500 1000 1500 2000 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) 8000 GATE TRIGGER CURRENT (mA) 7000 6000 5000 4000 3000 2000 1000 0 –60 –20 20 VD = 5 ~ 20V IT = 25 ~ 200A HALF SINE WAVE TURN ON TIME tgt, TURN ON DELAY TIME td (µs) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE (TYPICAL) TURN ON TIME, TURN ON DELAY TIME VS. TURN ON GATE CURRENT (TYPICAL) 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 10 20 30 40 50 60 70 80 90 100 TURN ON GATE CURRENT (A) td tgt IT = 2200A VD = 1250V diT/dt = 500A/µs diG/dt = 10A/µs Tj = 125°C 60 100 140 JUNCTION TEMPERATURE (°C) Aug.1998 MITSUBISHI GATE TURN-OFF THYRISTORS FG2000FX-50DA HIGH POWER INVERTER USE PRESS PACK TYPE TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs) TURN OFF TIME, TURN OFF STORAGE TIME VS. TURN OFF CURRENT (TYPICAL) 30 tgq TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs) TURN OFF TIME, TURN OFF STORAGE TIME VS. RATE OF RISE OF TURN OFF GATE CURRENT (TYPICAL) 50 25 ts 40 20 30 tgq 15 10 5 VD = 1250V VDM = 1875V diGQ/dt = –30A/µs VRG = 17V CS = 4.0µF LS = 0.3µH Tj = 125°C 20 VD = 1250V VDM = 1875V IT = 2200A 10 VRG = 17V CS = 4.0µF LS = 0.3µH Tj = 125°C ts 0 500 1000 1500 2000 2500 0 10 20 30 40 50 60 TURN OFF CURRENT (A) RATE OF RISE OF TURN OFF GATE CURRENT (A/µS) TURN OFF GATE CURRENT VS. TURN OFF CURRENT (TYPICAL) 700 TURN OFF GATE CURRENT (A) TURN OFF GATE CURRENT (A) TURN OFF GATE CURRENT VS. RATE OF RISE OF GATE CURRENT (TYPICAL) 800 600 700 500 600 400 300 200 VD = 1250V VDM = 1875V diGQ/dt = –30A/µs VRG = 17V CS = 4.0µF LS = 0.3µH Tj = 125°C 500 400 0 500 1000 1500 2000 2500 300 10 VD = 1250V VDM = 1875V IT = 2200A VRG = 17V CS = 4.0µF LS = 0.3µH Tj = 125°C 20 30 40 50 60 TURN OFF CURRENT (A) RATE OF RISE OF TURN OFF GATE CURRENT (A/µS) TURN ON SWITCHING ENERGY (MAXIMUM) SWITCHING ENERGY Eon (J/P) SWITCHING ENERGY Eoff (J/P) VD = 1250V 1.4 IGM = 30A diG/dt = 10A/µs CS = 4.0µF 1.2 RS = 5Ω Tj = 125°C TURN OFF SWITCHING ENERGY (MAXIMUM) 3.0 1.6 diT/dt = 500A/µs 300A/µs 200A/µs 100A/µs 2.5 2.0 1.5 1.0 0.5 0 VD = 1250V VDM = 1875V diGQ/dt = –30A/µs VRG = 17V CS = 4.0µF LS = 0.3µH Tj = 125°C 1.0 0.8 0.6 0.4 0.2 0 0 500 1000 1500 2000 2500 0 500 1000 1500 2000 2500 TURN ON CURRENT (A) TURN OFF CURRENT (A) Aug.1998