FG2000JV-90DA

MITSUBISHI GATE TURN-OFF THYRISTORS FG2000JV-90DA HIGH POWER INVERTER USE PRESS PACK TYPE FG2000JV-90DA OUTLINE DRAWING Dimension in mm GATE (WHITE) 356 ± 8 AUXILIARY CATHODE CONNECTOR (RED) φ 63 ± 0.5 0.4 min φ 3.5 ± 0.2 DEPTH 2.2 ± 0.2 CATHODE TYPE NAME ¡ITQRM Repetitive controllable on-state current ............. 2000A ¡IT(AV) Average on-state current ...................... 600A ¡VDRM Repetitive peak off state voltage ........ 4500V ¡Anode short type 26 ± 0.5 0.4 min φ 63 ± 0.5 φ 93 max ANODE φ 3.5 ± 0.2 DEPTH 2.2 ± 0.2 APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. MAXIMUM RATINGS Symbol VRRM VRSM VR(DC) VDRM VDSM VD(DC) + : VGK = –2V Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage+ Non-repetitive peak off-state voltage+ DC off-state voltage+ Parameter Repetitive controllable on-state current RMS on-state current Average on-state current Surge (non-repetitive) on-state current Current-squared, time integration Critical rate of rise of on-state current Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate reverse current Peak forward gate power dissipation Peak reverse gate power dissipation Average forward gate power dissipation Average reverse gate power dissipation Junction temperature Storage temperature Mounting force required Weight Voltage class 90DA 17 17 17 4500 4500 3600 Conditions VD = 2250V, VDM = 3375V, Tj = 125°C, CS = 4.0µ F, LS = 0.3µ H f = 60Hz, sine wave θ = 180°, Tf = 91°C One half cycle at 60Hz One cycle at 60Hz VD = 2250V, IGM = 30A, Tj = 125°C Ratings 2000 940 600 13 7 × 105 500 10 17 50 700 250 23.8 50 150 –40 ~ +125 –40 ~ +150 18 ~ 24 760 Unit V V V V V V Unit A A A kA A2s A/µs V V A A W kW W W °C °C kN g Feb.1999 Symbol I TQRM I T(RMS) I T(AV) I TSM I 2t d iT/dt VFGM VRGM I FGM I RGM PFGM PRGM PFG(AV) PRG(AV) Tj Tstg — — Recommended value 20 Standard value MITSUBISHI GATE TURN-OFF THYRISTORS FG2000JV-90DA HIGH POWER INVERTER USE PRESS PACK TYPE ELECTRICAL CHARACTERISTICS Symbol VTM IRRM IDRM IRG dv/dt tgt tgq IGQM VGT IGT Rth(j-f) Parameter On-state voltage Repetitive peak reverse current Repetitive peak off-state current Reverse gate current Critical rate of rise of off-state voltage Turn-on time Turn-off time Peak gate turn-off current Gate trigger voltage Gate trigger current Thermal resistance Test conditions Tj = 125 °C, ITM = 2000A, Instantaneous measurment Tj = 125 °C, VRRM Applied Tj = 125 °C, VDRM Applied, VGK = –2V Tj = 125 °C, VRG = 17V Tj = 125°C, VD = 2250V, V GK = –2V Tj = 125 °C, ITM = 2000A, IGM = 30A, VD = 2250V Tj = 125 °C, ITM = 2000A, VD = 2250V, V DM = 3375V, diGQ/dt = –30A/ µs, VRG = 17V, CS = 4.0µF, LS = 0.3µH DC METHOD : VD = 24V, R L = 0.1Ω, T j = 25°C Junction to fin Min — — — — 1000 — — — — — — Limits Typ — — — — — — — 570 — — — Max 3.5 100 100 100 — 10 30 — 1.5 2.5 0.017 Unit V mA mA mA V/µs µs µs A V A °C/W PERFORMANCE CURVES SURGE ON-STATE CURRENT (kA) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTIC 104 7 Tj = 125°C 5 3 2 103 7 5 3 2 102 7 5 3 2 101 0 1 2 3 4 5 6 7 RATED SURGE ON-STATE CURRENT 20 18 16 14 12 10 8 6 4 2 0 100 2 3 4 5 7 101 2 3 4 5 7 102 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN) 100 2 3 5 7101 0.025 GATE CHARACTERISTICS THERMAL IMPEDANCE (°C/W) GATE VOLTAGE (V) 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 VFGM = 10V 0.020 PFGM = 250W PFG(AV) = 50W VGT = 1.5V 0.015 0.010 Tj = 25°C IGT = 2.5A IFGM = 50A 0.005 0 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 TIME (s) 10–1 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE CURRENT (mA) Feb.1999 MITSUBISHI GATE TURN-OFF THYRISTORS FG2000JV-90DA HIGH POWER INVERTER USE PRESS PACK TYPE ON-STATE POWER DISSIPATION (W) MAXIMUM ON-STATE POWER DISSIPATION CHARACTERISTICS (SINGLE-PHASE HALF WAVE) 2000 1800 1600 θ 90° 60° 360° 1400 RESISTIVE, 1200 INDUCTIVE LOAD θ = 30° 1000 180° ALLOWABLE FIN TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 140 130 FIN TEMPERATURE (°C) 120° θ 360° RESISTIVE, INDUCTIVE LOAD 120 110 100 90 80 θ = 30° 60° 800 600 400 200 0 0 100 200 300 400 500 600 90° 120° 180° 70 60 0 100 200 300 400 500 600 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) MAXIMUM ON-STATE POWER DISSIPATION CHARACTERISTICS (RECTANGULAR WAVE) 2400 DC 2200 270° 180° 2000 1800 120° 90° 1600 60° 1400 θ = 30° 1200 1000 θ 800 600 360° RESISTIVE, 400 INDUCTIVE 200 LOAD 0 0 200 400 600 800 1000 AVERAGE ON-STATE CURRENT (A) ALLOWABLE FIN TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 140 130 ON-STATE POWER DISSIPATION (W) FIN TEMPERATURE (°C) θ 360° RESISTIVE, INDUCTIVE LOAD 120 110 100 90 80 70 60 0 θ = 30° 60° 90° 180° DC 270° 120° 200 400 600 800 1000 AVERAGE ON-STATE CURRENT (A) GATE TRIGGER CURRENT (A), GATE TRIGGER VOLTAGE (V) 7 6 5 4 3 2 1 0 –40 0 40 80 VGT VD = 24V RL = 0.1Ω DC METHOD TURN ON TIME tgt, TURN ON DELAY TIME td (µs) GATE TRIGGER CURRENT, GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE (MAXIMUM) 8 TURN ON TIME, TURN ON DELAY TIME VS. TURN ON GATE CURRENT (TYPICAL) 16 14 12 10 8 6 4 2 0 0 10 20 30 40 50 60 tgt IT = 2000A VD = 2250V diT/dt = 500A/µs diG/dt = 10A/µs Tj = 125°C IGT td 120 160 JUNCTION TEMPERATURE (°C) TURN ON GATE CURRENT (A) Feb.1999 MITSUBISHI GATE TURN-OFF THYRISTORS FG2000JV-90DA HIGH POWER INVERTER USE PRESS PACK TYPE TURN OFF TIME, TURN OFF STORAGE TIME VS. TURN OFF CURRENT (TYPICAL) 30 VD = 2250V VDM = 3375V diGQ/dt = –30A/µs 25 VRG = 17V CS = 4.0µF LS = 0.3µH 20 Tj = 125°C TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs) TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs) TURN OFF TIME, TURN OFF STORAGE TIME VS. RATE OF RISE OF TURN OFF GATE CURRENT (TYPICAL) 50 VD = 2250V VDM = 3375V IT = 2000A VRG = 17V CS = 4.0µF LS = 0.3µH Tj = 125°C 40 30 tgq 15 ts 20 tgq 10 10 ts 5 0 500 1000 1500 2000 2500 0 10 20 30 40 50 60 TURN OFF CURRENT (A) RATE OF RISE OF TURN OFF GATE CURRENT (A/µs) TURN OFF GATE CURRENT VS. TURN OFF CURRENT (TYPICAL) 700 TURN OFF GATE CURRENT (A) TURN OFF GATE CURRENT (A) TURN OFF GATE CURRENT VS. RATE OF RISE OF GATE CURRENT (TYPICAL) 800 600 700 500 600 400 300 200 VD = 2250V VDM = 3375V diGQ/dt = –30A/µs VRG = 17V CS = 4.0µF LS = 0.3µH Tj = 125°C 500 400 0 500 1000 1500 2000 2500 300 10 VD = 2250V VDM = 3375V IT = 2000A VRG = 17V CS = 4.0µF LS = 0.3µH Tj = 125°C 20 30 40 50 60 TURN OFF CURRENT (A) RATE OF RISE OF TURN OFF GATE CURRENT (A/µs) TURN ON SWITCHING ENERGY (MAXIMUM) 2.4 SWITCHING ENERGY Eon (J/P) SWITCHING ENERGY Eoff (J/P) diT/dt = 300A/µs 200A/µs TURN OFF SWITCHING ENERGY (MAXIMUM) 6.0 5.0 4.0 3.0 2.0 1.0 0 VD = 2250V VDM = 3375V diGQ/dt = –30A/µs VRG = 17V LS = 0.3µH Tj = 125°C 4µF CS = 2µF 6µF 2.0 1.6 1.2 0.8 0.4 0 100A/µs VD = 2250V IGM = 30A diG/dt = 10A/µs CS = 4.0µF RS = 5Ω Tj = 125°C 0 400 800 1200 1600 2000 2400 0 400 800 1200 1600 2000 2400 TURN ON CURRENT (A) TURN OFF CURRENT (A) Feb.1999