FG3000DV-90DA

MITSUBISHI GATE TURN-OFF THYRISTORS FG3000DV-90DA HIGH POWER INVERTER USE PRESS PACK TYPE FG3000DV-90DA OUTLINE DRAWING Dimensions in mm GATE (WHITE) 412 ± 8 AUXILIARY CATHODE CONNECTOR (RED) φ 70 ± 0.2 0.4 MIN φ 3.5 DEPTH 2.2 ± 0.2 CATHODE TYPE NAME q ITQRM Repetitive controllable on-state current ...........3000A q IT(AV) Average on-state current .......................950A q VDRM Repetitive peak off state voltage ...................4500V q Anode short type 26 ± 0.5 0.4 MIN φ 70±0.2 φ 108 MAX ANODE φ 3.5 DEPTH 2.2 ± 0.2 APPLICATION Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters. MAXIMUM RATINGS Symbol VRRM VRSM VR(DC) VDRM VDSM VD(DC) + : VGK = –2V Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage+ Non-repetitive peak off-state voltage+ DC off-state voltage+ Parameter Repetitive controllable on-state current RMS on-state current Average on-state current Surge (non-repetitive) on-state current Current-squared, time integration Critical rate of rise of on-state current Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate reverse current Peak forward gate power dissipation Peak reverse gate power dissipation Average forward gate power dissipation Average reverse gate power dissipation Junction temperature Storage temperature Mounting force required Weight Voltage class 90DA 17 17 17 4500 4500 2500 Conditions VDM = 3375V, Tj = 125°C, CS = 6.0µF, LS = 0.3µH f = 60Hz, sine wave θ = 180°, Tf = 71°C One half cycle at 60Hz One cycle at 60Hz VD = 2250V, IGM = 40A, Tj = 125°C Ratings 3000 1490 950 17 1.2 × 106 500 10 17 100 900 400 27 100 230 –40 ~ +125 –40 ~ +150 30 ~ 40 1220 Unit V V V V V V Unit A A A kA A2s A/µs V V A A W kW W W °C °C kN g Aug.1998 Symbol ITQRM IT(RMS) IT(AV) ITSM I2t diT/dt VFGM VRGM IFGM IRGM PFGM PRGM PFG(AV) PRG(AV) Tj Tstg — — Recommended value 33 Standard value MITSUBISHI GATE TURN-OFF THYRISTORS FG3000DV-90DA HIGH POWER INVERTER USE PRESS PACK TYPE ELECTRICAL CHARACTERISTICS Symbol VTM IRRM IDRM IRG dv/dt tgt tgq IGQM VGT IGT Rth(j-f) Parameter On-state voltage Repetitive peak reverse current Repetitive peak off-state current Reverse gate current Critical rate of rise of off-state voltage Turn-on time Turn-off time Peak gate turn-off current Gate trigger voltage Gate trigger current Thermal resistance Test conditions Tj = 125°C, ITM = 3000A, Instantaneous measurment Tj = 125°C, VRRM Applied Tj = 125°C, VDRM Applied, VGK = –2V Tj = 125°C, VRG = 17V Tj = 125°C, VD = 2250V, VGK = –2V Tj = 125°C, ITM = 3000A, IGM = 40A, VD = 2250V Tj = 125°C, ITM = 3000A, VDM = 3375V, diGQ/dt = –40A/µs VRG = 17V, CS = 6.0µF, LS = 0.3µH DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C Junction to fin Min — — — — 1000 — — — — — — Limits Typ — — — — — — — 670 — — — Max 4.0 300 150 300 — 10 30 — 1.5 4000 0.015 Unit V mA mA mA V/µs µs µs A V mA °C/W PERFORMANCE CURVES SURGE ON-STATE CURRENT (kA) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTIC 104 7 Tj = 125°C 5 3 2 103 7 5 3 2 102 7 5 3 2 101 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT 25 20 15 10 5 0 100 23 5 7 101 23 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN) 100 2 3 5 7101 0.025 THERMAL IMPEDANCE (°C/ W) GATE CHARACTERISTICS 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 GATE VOLTAGE (V) VFGM = 10V PFG(AV) = 100W VGT = 1.5V PFGM = 400W 0.020 0.015 0.010 Tj = 25°C IGT = 4000mA IFGM = 100A 0.005 0 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 TIME (S) 10–1 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 GATE CURRENT (mA) Aug.1998 MITSUBISHI GATE TURN-OFF THYRISTORS FG3000DV-90DA HIGH POWER INVERTER USE PRESS PACK TYPE ON-STATE POWER DISSIPATION (W) MAXIMUM ON-STATE POWER DISSIPATION CHARACTERISTICS (SINGLE-PHASE HALF WAVE) 5000 4500 4000 3500 3000 2500 2000 1500 1000 500 0 0 200 400 600 800 1000 FIN TEMPERATURE (°C) θ 360° RESISTIVE, INDUCTIVE LOAD 180° 120° θ = 30° 60° 90° ALLOWABLE FIN TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 150 140 130 120 110 100 90 80 70 60 0 θ = 30° θ 360° RESISTIVE, INDUCTIVE LOAD 60° 90° 120° 180° 200 400 600 800 1000 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) ON-STATE POWER DISSIPATION (W) MAXIMUM ON-STATE POWER DISSIPATION CHARACTERISTICS (RECTANGULAR WAVE) 5000 DC ALLOWABLE FIN TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 130 120 FIN TEMPERATURE (°C) 110 100 90 80 70 60 θ = 30° 4000 180° 120° 90° 60° θ = 30° 270° θ 360° RESISTIVE, INDUCTIVE LOAD 3000 2000 θ 360° RESISTIVE, INDUCTIVE LOAD 1000 60° 120° 270° 90° 180° DC 0 0 500 1000 1500 2000 50 0 500 1000 1500 2000 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) 8000 GATE TRIGGER CURRENT (mA) 7000 6000 5000 4000 3000 2000 1000 0 –60 –20 20 TURN ON TIME tgt, TURN ON DELAY TIME td (µs) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE (TYPICAL) VD = 5 ~ 20V IT = 25 ~ 200A HALF SINE WAVE TURN ON TIME, TURN ON DELAY TIME VS. TURN ON GATE CURRENT (TYPICAL) 10.0 IT = 3000A VD = 2250V diT/dt = 500A /µs diG/dt = 20A /µs Tj = 125°C 8.0 tgt 6.0 4.0 2.0 td 60 100 140 0 0 20 40 60 80 100 JUNCTION TEMPERATURE (°C) TURN ON GATE CURRENT (A) Aug.1998 MITSUBISHI GATE TURN-OFF THYRISTORS FG3000DV-90DA HIGH POWER INVERTER USE PRESS PACK TYPE TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs) TURN OFF TIME, TURN OFF STORAGE TIME VS. TURN OFF CURRENT (TYPICAL) 40 VD = 2250V TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs) TURN OFF TIME, TURN OFF STORAGE TIME VS. RATE OF RISE OF TURN OFF GATE CURRENT (TYPICAL) 50 VD = 2250V VDM = 3375V IT = 3000A 40 VRG = 17V CS = 6.0µF LS = 0.3µH 30 Tj = 125°C 35 VDM = 3375V 30 diGQ/dt = –40A/µs VRG = 17V CS = 6.0µF LS = 0.3µH 25 Tj = 125°C 20 15 10 5 0 0 1000 2000 3000 4000 tgq ts 20 tgq ts 10 0 20 30 40 50 60 70 TURN OFF CURRENT (A) RATE OF RISE OF TURN OFF GATE CURRENT (A/µS) TURN OFF GATE CURRENT VS. TURN OFF CURRENT (TYPICAL) 800 TURN OFF GATE CURRENT (A) TURN OFF GATE CURRENT VS. RATE OF RISE OF GATE CURRENT (TYPICAL) 1000 TURN OFF GATE CURRENT (A) 700 600 500 400 300 200 100 0 0 1000 2000 VD = 2250V VDM = 3375V diGQ/dt = –40A/µs VRG = 17V CS = 6.0µF LS = 0.3µH Tj = 125°C 800 600 400 200 3000 4000 0 VD = 2250V VDM = 3375V IT = 3000A VRG = 17V CS = 6.0µF LS = 0.3µH Tj = 125°C 0 20 40 60 80 100 TURN OFF CURRENT (A) RATE OF RISE OF TURN OFF GATE CURRENT (A/µS) TURN ON SWITCHING ENERGY (MAXIMUM) 8 SWITCHING ENERGY Eon (J/P) SWITCHING ENERGY Eoff (J/P) VD = 2250V 7 IGM = 40A diG/dt = 10A/µs CS = 6.0µF 6 R S = 5Ω Tj = 125°C TURN OFF SWITCHING ENERGY (MAXIMUM) 10 9 8 7 6 5 4 3 2 1 0 0 1000 2000 VD = 2250V VDM = 3375V diGQ/dt = –40A/µs VRG = 17V LS = 0.3µH Tj = 125°C CS = 3.0µF 4.0µF 6.0µF 5 4 3 2 1 0 0 1000 diT/dt = 500A/µs 300A/µs 100A/µs 2000 3000 4000 5000 3000 4000 5000 TURN ON CURRENT (A) TURN OFF CURRENT (A) Aug.1998