FG4000CX-90DA

MITSUBISHI GATE TURN-OFF THYRISTORS FG4000CX-90DA HIGH POWER INVERTER USE PRESS PACK TYPE FG4000CX-90DA OUTLINE DRAWING Dimensions in mm GATE (WHITE) 500 ± 8 AUXILIARY CATHODE CONNECTOR (RED) φ 3.5 DEPTH 2.2 ± 0.2 CATHODE TYPE NAME q ITQRM Repetitive controllable on-state current ...........4000A q IT(AV) Average on-state current .....................1200A q VDRM Repetitive peak off state voltage ...................4500V q Anode short type 26 ± 0.5 0.4 MIN 0.4 MIN φ 85 ± 0.2 φ 85 ± 0.2 φ 120 MAX ANODE φ 3.5 DEPTH 2.2 ± 0.2 APPLICATION Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters. MAXIMUM RATINGS Symbol VRRM VRSM VR(DC) VDRM VDSM VD(DC) + : VGK = –2V Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage+ Non-repetitive peak off-state voltage+ DC off-state voltage+ Parameter Repetitive controllable on-state current RMS on-state current Average on-state current Surge (non-repetitive) on-state current Current-squared, time integration Critical rate of rise of on-state current Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate reverse current Peak forward gate power dissipation Peak reverse gate power dissipation Average forward gate power dissipation Average reverse gate power dissipation Junction temperature Storage temperature Mounting force required Weight Voltage class 90DA 19 19 19 4500 4500 2500 Conditions VDM = 3375V, Tj = 125°C, CS = 5.0µF, LS = 0.2µH f = 60Hz, sine wave θ = 180°, Tf = 78°C One half cycle at 60Hz One cycle at 60Hz VD = 3400V, IGM = 40A, Tj = 125°C Ratings 4000 1880 1200 20 1.7 × 106 500 10 19 130 1100 520 33 130 300 –40 ~ +125 –40 ~ +150 38 ~ 54 1600 Unit V V V V V V Unit A A A kA A2s A/µs V V A A W kW W W °C °C kN g Aug.1998 Symbol ITQRM IT(RMS) IT(AV) ITSM I2t diT/dt VFGM VRGM IFGM IRGM PFGM PRGM PFG(AV) PRG(AV) Tj Tstg — — Recommended value 47 Standard value MITSUBISHI GATE TURN-OFF THYRISTORS FG4000CX-90DA HIGH POWER INVERTER USE PRESS PACK TYPE ELECTRICAL CHARACTERISTICS Symbol VTM IRRM IDRM IRG dv/dt tgt tgq IGQM VGT IGT Rth(j-f) Parameter On-state voltage Repetitive peak reverse current Repetitive peak off-state current Reverse gate current Critical rate of rise of off-state voltage Turn-on time Turn-off time Peak gate turn-off current Gate trigger voltage Gate trigger current Thermal resistance Test conditions Tj = 125°C, ITM = 4000A, Instantaneous measurment Tj = 125°C, VRRM Applied Tj = 125°C, VDRM Applied, VGK = –2V Tj = 125°C, VRG = 19V Tj = 125°C, VD = 2250V, VGK = –2V Tj = 125°C, ITM = 4000A, IGM = 40A, VD = 3400V Tj = 125°C, ITM = 4000A, VDM = 3375V, diGQ/dt = –50A/µs VRG = 17V, CS = 5.0µF, LS = 0.2µH DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C Junction to fin Min — — — — 1000 — — — — — — Limits Typ — — — — — — — 1000 — — — Max 4.0 100 150 100 — 10 40 — 1.5 4000 0.010 Unit V mA mA mA V/µs µs µs A V mA °C/W PERFORMANCE CURVES SURGE ON-STATE CURRENT (kA) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTIC 104 7 Tj = 125°C 5 3 2 103 7 5 3 2 102 7 5 3 2 101 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT 30 27 24 21 18 15 12 9 6 3 00 10 23 5 7 101 23 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN) 100 2 3 5 7101 0.015 GATE CHARACTERISTICS THERMAL IMPEDANCE (°C/W) GATE VOLTAGE (V) 102 7 5 3 2 VFGM = 10V PFGM = 520W 0.012 101 7 5 PFG(AV) = 130W 3 VGT = 1.5V 2 100 7 5 3 2 Tj = 25°C IGT = 4000mA IFGM = 130A 0.009 0.006 0.003 0 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 TIME (S) 10–1 103 2 3 5 7 104 2 3 5 7 105 2 3 5 7 106 GATE CURRENT (mA) Aug.1998 MITSUBISHI GATE TURN-OFF THYRISTORS FG4000CX-90DA HIGH POWER INVERTER USE PRESS PACK TYPE ON-STATE POWER DISSIPATION (W) MAXIMUM ON-STATE POWER DISSIPATION CHARACTERISTICS (SINGLE-PHASE HALF WAVE) 4800 4200 3600 180° ALLOWABLE FIN TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 130 120 FIN TEMPERATURE (°C) θ 360° RESISTIVE, INDUCTIVE LOAD θ 90° 60° 120° 360° RESISTIVE, 3000 INDUCTIVE LOAD 110 100 90 80 70 60 θ = 30° 60° 2400 1800 1200 600 0 0 300 θ = 30° 90° 120° 180° 600 900 1200 50 0 300 600 900 1200 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) ON-STATE POWER DISSIPATION (W) MAXIMUM ON-STATE POWER DISSIPATION CHARACTERISTICS (RECTANGULAR WAVE) 8000 7000 6000 5000 4000 60° θ 360° RESISTIVE, INDUCTIVE LOAD 90° θ = 30° DC ALLOWABLE FIN TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 140 130 ON TEMPERATURE (W) θ 360° RESISTIVE, INDUCTIVE LOAD 120 110 100 90 80 70 270° 180° 120° 3000 2000 1000 0 0 120° θ = 30° 60° 90° 180° 270° DC 500 1000 1500 2000 60 0 500 1000 1500 2000 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) 8000 GATE TRIGGER CURRENT (mA) TURN ON TIME tgt, TURN ON DELAY TIME td (µs) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE (TYPICAL) VD = 5 ~ 20V IT = 25 ~ 200A HALF SINE WAVE TURN ON TIME, TURN ON DELAY TIME VS. TURN ON GATE CURRENT (TYPICAL) 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 10 20 30 40 50 60 70 80 90 100 TURN ON GATE CURRENT (A) td tgt IT = 4000A VD = 2250V diT/dt = 500A/µs diG/dt = 20A/µs Tj = 125°C 7000 6000 5000 4000 3000 2000 1000 0 –60 –20 20 60 100 140 JUNCTION TEMPERATURE (°C) Aug.1998 MITSUBISHI GATE TURN-OFF THYRISTORS FG4000CX-90DA HIGH POWER INVERTER USE PRESS PACK TYPE TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs) TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs) TURN OFF TIME, TURN OFF STORAGE TIME VS. TURN OFF CURRENT (TYPICAL) 30 tgq TURN OFF TIME, TURN OFF STORAGE TIME VS. RATE OF RISE OF TURN OFF GATE CURRENT (TYPICAL) 50 25 ts 40 20 30 tgq 15 10 5 VD = 2250V VDM = 3375V diGQ/dt = –50A/µs VRG = 17V CS = 5.0µF LS = 0.2µH Tj = 125°C 20 VD = 2250V VDM = 3375V IT = 4000A 10 VRG = 17V CS = 5.0µF LS = 0.2µH Tj = 125°C ts 0 1000 2000 3000 4000 5000 0 0 10 20 30 40 50 60 70 80 90 100 TURN OFF CURRENT (A) RATE OF RISE OF TURN OFF GATE CURRENT (A/µS) TURN OFF GATE CURRENT VS. TURN OFF CURRENT (TYPICAL) 1200 1400 TURN OFF GATE CURRENT VS. RATE OF RISE OF GATE CURRENT (TYPICAL) TURN OFF GATE CURRENT (A) 1000 TURN OFF GATE CURRENT (A) 1200 800 1000 600 400 200 VD = 2250V VDM = 3375V diGQ/dt = –50A/µs VRG = 17V CS = 5.0µF LS = 0.2µH Tj = 125°C 800 600 0 1000 2000 3000 4000 5000 400 VD = 2250V VDM = 3375V IT = 4000A VRG = 17V CS = 5.0µF LS = 0.2µH Tj = 125°C 0 10 20 30 40 50 60 70 80 90 100 TURN OFF CURRENT (A) RATE OF RISE OF TURN OFF GATE CURRENT (A/µS) TURN ON SWITCHING ENERGY (MAXIMUM) 8.0 TURN OFF SWITCHING ENERGY (MAXIMUM) 16 VD = 2250V diGQ/dt = –50A/µs VRG = 19V Tj = 125°C 4.0µF 5.0µF SWITCHING ENERGY Eon (J/P) SWITCHING ENERGY Eoff (J/P) VD = 2250V 7.0 IGM = 40A diG/dt = 20A/µs CS = 5.0µF 6.0 RS = 5Ω Tj = 125°C 14 VDM = 3375V 12 LS = 0.2µH 10 8 6 4 2 0 0 5.0 4.0 3.0 2.0 1.0 0 diT/dt = 500A /µs 300A /µs CS = 2.0µF 100A /µs 0 1000 2000 3000 4000 5000 1000 2000 3000 4000 TURN ON CURRENT (A) TURN OFF CURRENT (A) Aug.1998