FG4000GX-90DA

MITSUBISHI GATE TURN-OFF THYRISTORS FG4000GX-90DA HIGH POWER INVERTER USE PRESS PACK TYPE FG4000GX-90DA OUTLINE DRAWING Dimensions in mm GATE (WHITE) 555 ± 10 AUXILIARY CATHODE CONNECTOR (RED) φ 3.5 DEPTH 2.2 ± 0.2 CATHODE TYPENAME q ITQRM Repetitive controllable on-state current ...........4000A q IT(AV) Average on-state current .....................1200A q VDRM Repetitive peak off state voltage ...................4500V q Anode short type 26 ± 0.5 0.4 MIN 0.4 MIN φ 85 ± 0.2 φ 85 ± 0.2 φ 120 MAX ANODE φ 3.5 DEPTH 2.2 ± 0.2 APPLICATION Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters. MAXIMUM RATINGS Symbol VRRM VRSM VR(DC) VDRM VDSM VD(DC) VLTDS + : VGK = –2V Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage+ Non-repetitive peak off-state voltage+ DC off-state voltage+ Long term DC stability voltage+ Parameter Repetitive controllable on-state current RMS on-state current Average on-state current Surge (non-repetitive) on-state current Current-squared, time integration Critical rate of rise of on-state current Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate reverse current Peak forward gate power dissipation Peak reverse gate power dissipation Average forward gate power dissipation Average reverse gate power dissipation Junction temperature Storage temperature Mounting force required Weight Voltage class 90DA 17 17 17 4500 4500 3600 3000 Conditions VDM = 4500V, Tj = 125°C, CS = 4.0µF, LS = 0.2µH f = 60Hz, sine wave θ = 180°, Tf = 70°C One half cycle at 60Hz One cycle at 60Hz VD = 3400V, IGM = 25A, Tj = 125°C Ratings 4000 1800 1200 25 2.6 × 106 500 10 17 130 900 520 33 130 300 –40 ~ +125 –40 ~ +150 35 ~ 48 1220 Unit V V V V V V V Unit A A A kA A2s A/µs V V A A W kW W W °C °C kN g Aug.1998 Symbol ITQRM IT(RMS) IT(AV) ITSM I2t diT/dt VFGM VRGM IFGM IRGM PFGM PRGM PFG(AV) PRG(AV) Tj Tstg — — Recommended value 42 Standard value MITSUBISHI GATE TURN-OFF THYRISTORS FG4000GX-90DA HIGH POWER INVERTER USE PRESS PACK TYPE ELECTRICAL CHARACTERISTICS Symbol VTM IRRM IDRM IRG dv/dt tgt tgq IGQM VGT IGT Rth(j-f) Parameter On-state voltage Repetitive peak reverse current Repetitive peak off-state current Reverse gate current Critical rate of rise of off-state voltage Turn-on time Turn-off time Peak gate turn-off current Gate trigger voltage Gate trigger current Thermal resistance Test conditions Tj = 125°C, ITM = 4000A, Instantaneous measurment Tj = 125°C, VRRM Applied Tj = 125°C, VDRM Applied, VGK = –2V Tj = 125°C, VRG = 17V Tj = 125°C, VD = 2250V, VGK = –2V Tj = 125°C, ITM = 4000A, IGM = 25A, VD = 3400V Tj = 125°C, ITM = 4000A, VDM = 4500V, diGQ/dt = –50A/µs VRG = 17V, CS = 4.0µF, LS = 0.2µH DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C Junction to fin Min — — — — 1000 — — — — — — Limits Typ — — — — — — — 900 — — — Max 4.3 10 150 10 — 8 35 — 1.5 2500 0.011 Unit V mA mA mA V/µs µs µs A V mA °C/W PERFORMANCE CURVES SURGE ON-STATE CURRENT (kA) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTIC 104 7 Tj = 125°C 5 3 2 103 7 5 3 2 102 0 1 2 3 4 5 6 7 8 9 10 RATED SURGE ON-STATE CURRENT 30 25 20 15 10 5 100 23 5 7 101 23 5 7 102 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN) 100 2 3 5 7 101 0.016 GATE CHARACTERISTICS 103 THERMAL IMPEDANCE (°C/W) 7 5 3 2 7 5 3 2 7 5 3 2 0.014 0.012 0.010 0.008 0.006 0.004 0.002 0 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 TIME (S) GATE VOLTAGE (V) 102 VFGM = 10V VGT = 1.5V PFG(AV) = 130W PFGM = 520W 101 100 7 5 Tj = 25°C 3 IGT = 2500mA 2 IFGM = 130A 10–1 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 2 3 5 7 106 GATE CURRENT (mA) Aug.1998 MITSUBISHI GATE TURN-OFF THYRISTORS FG4000GX-90DA HIGH POWER INVERTER USE PRESS PACK TYPE ON-STATE POWER DISSIPATION (W) MAXIMUM ON-STATE POWER DISSIPATION CHARACTERISTICS (SINGLE-PHASE HALF WAVE) 5000 4500 4000 3500 3000 2500 2000 1500 1000 500 0 0 400 800 1200 θ 360° RESISTIVE, INDUCTIVE LOAD θ = 30° 60° ALLOWABLE FIN TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 140 130 FIN TEMPERATURE (°C) 180° 120° 90° 120 110 100 90 80 70 60 50 40 0 θ = 30° 60° 90° 120° 180° θ 360° RESISTIVE, INDUCTIVE LOAD 1600 2000 400 800 1200 1600 2000 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) ON-STATE POWER DISSIPATION (W) MAXIMUM ON-STATE POWER DISSIPATION CHARACTERISTICS (RECTANGULAR WAVE) 10000 9000 8000 7000 6000 5000 4000 3000 2000 1000 0 0 400 800 1200 1600 2000 θ = 30° 60° 90° 120° ALLOWABLE FIN TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 150 140 FIN TEMPERATURE (°C) θ 360° RESISTIVE, INDUCTIVE LOAD 180° 130 120 110 100 90 80 70 60 50 0 θ = 30° 60° θ 360° RESISTIVE, INDUCTIVE LOAD 270° DC 90° 120° 180° 270° DC 400 800 1200 1600 2000 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) 10 GATE TRIGGER CURRENT (A) 9 8 7 6 5 4 3 2 1 0 –40 0 40 80 VD = 24V RL = 0.1Ω DC METHOD TURN ON TIME tgt, TURN ON DELAY TIME td (µs) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE (MAXIMUM) TURN ON TIME, TURN ON DELAY TIME VS. TURN ON GATE CURRENT (TYPICAL) 5.0 4.0 IT = 4000A VD = 3400V diT/dt = 500A/µs diG/dt = 20A/µs 3.0 Tj = 125°C tgt 2.0 td 1.0 120 160 0 10 20 30 40 50 60 JUNCTION TEMPERATURE (°C) TURN ON GATE CURRENT (A) Aug.1998 MITSUBISHI GATE TURN-OFF THYRISTORS FG4000GX-90DA HIGH POWER INVERTER USE PRESS PACK TYPE TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs) TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs) TURN OFF TIME, TURN OFF STORAGE TIME VS. TURN OFF CURRENT (TYPICAL) 80 VD = 3400V TURN OFF TIME, TURN OFF STORAGE TIME VS. RATE OF RISE OF TURN OFF GATE CURRENT (TYPICAL) 50 70 VDM = 4500V 60 VRG = 17V CS = 4.0µF LS = 0.2µH 50 Tj = 125°C diGQ/dt = –50A/µs 40 tgq 30 ts 40 tgq 30 20 10 0 500 1000 1500 2000 2500 3000 3500 4000 4500 TURN OFF CURRENT (A) ts 20 VD = 3400V VDM = 3375V IT = 4000A 10 VRG = 17V CS = 4.0µF LS = 0.2µH Tj = 125°C 0 20 30 40 50 60 70 RATE OF RISE OF TURN OFF GATE CURRENT (A/µS) TURN OFF GATE CURRENT VS. TURN OFF CURRENT (TYPICAL) TURN OFF GATE CURRENT VS. RATE OF RISE OF GATE CURRENT (TYPICAL) 1100 TURN OFF GATE CURRENT (A) TURN OFF GATE CURRENT (A) VD = 3400V 1400 VDM = 4500V diGQ/dt = –50A/µs 1200 VRG = 17V CS = 4.0µF LS = 0.2µH 1000 Tj = 125°C 1600 1000 900 800 700 600 500 400 300 200 100 0 0 10 20 30 40 50 VD = 3400V VDM = 4500V IT = 4000A VRG = 17V CS = 4.0µF LS = 0.2µH Tj = 125°C 800 600 400 200 0 500 1000 1500 2000 2500 3000 3500 4000 4500 TURN OFF CURRENT (A) 60 70 80 RATE OF RISE OF TURN OFF GATE CURRENT (A/µS) TURN ON SWITCHING ENERGY (MAXIMUM) 8 TURN OFF SWITCHING ENERGY (MAXIMUM) 12 SWITCHING ENERGY Eon (J/P) SWITCHING ENERGY Eoff (J/P) VD = 2800V 7 IGM = 25A diG/dt = 20A/µs CS = 4.0µF 6 RS = 5Ω Tj = 125°C 11 10 9 8 7 6 5 4 3 2 0 1000 2000 CS = 4.0µF diT/dt = 500A /µs CS = 2.5µF 5 4 300A /µs 3 2 1 0 0 1000 2000 3000 4000 5000 100A /µs VD = 2800V VDM = 4500V diGQ/dt = –50A/µs VRG = 17V LS = 0.2µH Tj = 125°C 3000 4000 5000 TURN ON CURRENT (A) TURN OFF CURRENT (A) Aug.1998