FGC3500AX-120DS

MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS IN ELIM PR . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY FGC3500AX-120DS HIGH POWER INVERTER USE PRESS PACK TYPE FGC3500AX-120DS OUTLINE DRAWING Dimensions in mm φ1 +0.2 16-φ4.5 0 34 ±0 .4 22.5° ± 0.5° φ147 ± 0.4 φ85 ± 0.2 q ITQRM Repetitive controllable on-state current .......... 3500A q IT(AV) Average on-state current .................... 1200A q VDRM Repetitive peak off-state voltage .................. 6000V q Anode short type φ85 ± 0.2 φ120MAX (φ127) φ3.5 ± 0.2 2.2 ± 0.2DEPTH APPLICATION Inverters, DC choppers, Induction heaters, DC to DC converters. MAXIMUM RATINGS Symbol VRRM VRSM VR(DC) VDRM VDSM VD(DC) VLTDS + : VGK = –2V Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage+ Non-repetitive peak off-state voltage+ DC off-state voltage+ Long term DC stability voltage+ Parameter Repetitive controllable on-state current RMS on-state current Average on-state current Surge on-state current Current-squared, time integration Critical rate of rise of on-state current Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak reverse gate current Peak forward gate power dissipation Peak reverse gate power dissipation Average forward gate power dissipation Average reverse gate power dissipation Junction temperature Storage temperature Mounting force required Weight (Recommended value 40kN) Typical value Voltage class 21 21 21 6000 6000 4800 3600 Conditions VDM = 6000V, VD = 3600V, LC = 0.3µH, VRG = 20V diGQ/dt = 6000A/µs, Tj = 25/125°C (see Fig. 1, 3) Applied for all conduction angles f = 60Hz, sinewave θ = 180°, Tf = 70°C One half cycle at 60Hz, Tj = 125°C VD = 3600V, IT = 3500A, IGM= 200A, Tj= 125°C (see Fig. 1, 2) diG/dt = 100A/µs Ratings 3500 1800 1200 25 2.6 × 106 1000 10 21 1000 3500 10 120 200 6300 –20 ~ +125 –20 ~ +150 32 ~ 48 1500 0.4MIN 0.4MIN (6.8) 26 ± 0.5 M3!0.5 2.5DEPTH 0 (4 + 0.3 ) – Unit V V V V V V V Unit A A A kA A 2s A/µs V V A A kW kW W W °C °C kN g Sep. 2000 Symbol ITQRM IT(RMS) IT(AV) ITSM I2t diT/dt VFGM VRGM IFGM IRGM PFGM PRGM PFG(AV) PRG(AV) Tj Tstg — — MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS IN ELIM PR . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY FGC3500AX-120DS HIGH POWER INVERTER USE PRESS PACK TYPE ELECTRICAL CHARACTERISTICS Symbol VTM IRRM IDRM IGRM dv/dt tgt td Eon ts Eoff IGT VGT Rth(j-f) Parameter On-state voltage Repetitive peak reverse current Repetitive peak off-state current Reverse gate current Critical rate of rise of off-state voltage Turn-on time Delay time Turn-on switching energy Storage time Turn-off switching energy Gate trigger current Gate trigger voltage Thermal resistance Test conditions IT = 4000A, Tj = 125°C VRM = 21V, Tj = 125°C VDM = 6000V, VGK = –2V, Tj = 125°C VRG = 21V, Tj = 125°C VD = 3600V, VGK = –2V, Tj = 125°C (Expo. wave) VD = 3600V, IT = 3500A, di/dt = 1000A/µs IGM = 200A, diG/dt = 100A/µs, Tj = 125°C (see Fig. 1, 2) VDM = 6000V, VD = 3600V, IT = 3500A diGQ/dt = 6000A/µs, CC = 6µF, LC = 0.3µH (see Fig. 1, 3) VRG = 20V, Tj = 125°C DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C Junction to fin Min — — — — (see Fig. 4) 3000 — — — — — — — — Limits Typ — — — — — — — 1.2 — 19 — — — Max 4.0 100 150 100 — 3.0 1.0 — 3.0 — 2.5 1.5 0.011 Unit V mA mA mA V/µs µs µs J/P µs J/P A V °C/W Fig. 1 Turn-on and Turn-off waveform IT VD VD td tgt diG/dt IGM ts IG diGQ/dt VRG IGQ td ; 0VG ~ 0.9VD tgt ; 0VG ~ 0.1VD diG/dt ; 0.1IGM ~ 0.9IGM ts ; 0VG ~ 0.9IT diGQ/dt ; 0.1IGQ ~ 0.9IGQ VRG Fig. 2 Turn-on test circuit L Fig. 3 Turn-off test circuit (With clamp circuit) Fig. 4 dv/dt test waveform dV/dt 0.632VD/τ L(line) GCT VD VD 0.632VD Rc L(load) VD FWDi CDi GCT Lc Cc τ t Sep. 2000 MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS IN ELIM PR . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY FGC3500AX-120DS HIGH POWER INVERTER USE PRESS PACK TYPE PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTIC 104 ON-STATE CURRENT (A) 7 5 3 2 TURN ON SWITCHING ENERGY Eon (J/P) TURN ON SWITCHING ENERGY (TYPICAL) 2.0 Condition 1.8 VD=3600V, di/dt=1000A/µs 1.6 IGM=200A, diG/dt=100A/µs Tj=125°C 103 7 5 3 2 Tj=125°C Tj=25°C 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 500 1000 1500 2000 2500 3000 3500 4000 TURN ON CURRENT (A) 102 7 5 3 2 10 0 1 2 3 4 5 6 7 ON-STATE VOLTAGE (V) TURN OFF SWITCHING ENERGY Eoff (J/P) TURN OFF SWITCHING ENERGY (TYPICAL) 25 20 VD=3600V, CC=6µF VDM=3600V+0.44∗IT 0.014 MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN) THERMAL IMPEDANCE Zth (°C/W) Condition 0.012 0.01 0.008 0.006 0.004 0.002 LC=0.3µF, Tj=125°C diGQ/dt=6000A/µs 15 10 5 0 0 500 1000 1500 2000 2500 3000 3500 4000 TURN OFF CURRENT (A) 0 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 TIME (S) Sep. 2000