FK10KM-9

MITSUBISHI Nch POWER MOSFET FK10KM-9 HIGH-SPEED SWITCHING USE FK10KM-9 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 q GATE w DRAIN e SOURCE 123 2.6 ± 0.2 w ¡VDSS ................................................................................ 450V ¡rDS (ON) (MAX) .............................................................. 0.92Ω ¡ID ......................................................................................... 10A ¡Viso ................................................................................ 2000V ¡Integrated Fast Recovery Diode (MAX.) ........150ns q e TO-220FN APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IS ISM PD Tch Tstg Viso — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V Conditions Ratings 450 ±30 10 30 10 30 35 –55 ~ +150 –55 ~ +150 2000 2.0 Unit V V A A A A W °C °C Vrms g Feb.1999 AC for 1minute, Terminal to case Typical value MITSUBISHI Nch POWER MOSFET FK10KM-9 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 450V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 450 ±30 — — 2 — — 3.3 — — — — — — — — — — Typ. — — — — 3 0.70 3.50 5.5 1100 130 20 20 30 95 35 1.5 — — Max. — — ±10 1 4 0.92 4.60 — — — — — — — — 2.0 3.57 150 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W ns Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω IS = 5A, VGS = 0V Channel to case IS = 10A, dis/dt = –100A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 5 3 2 101 7 5 3 2 tw=10µs 100µs 1ms 10ms 40 30 20 10 0 0 50 100 150 200 TC = 25°C Single Pulse 10–1 DC 7 50 1 2 3 5 7 102 2 3 5 7 103 10 2 3 5 7 10 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 100 7 5 3 2 CASE TEMPERATURE TC (°C) MITSUBISHI Nch POWER MOSFET FK10KM-9 HIGH-SPEED SWITCHING USE 20 OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V PD = 35W 7V 10 6V DRAIN CURRENT ID (A) 8 OUTPUT CHARACTERISTICS (TYPICAL) VGS=20V 10V 6V PD= 35W DRAIN CURRENT ID (A) 16 TC = 25°C Pulse Test 5V 5V 6 TC = 25°C Pulse Test 12 8 4 4 4V 0 0 10 20 30 40 50 2 4V 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) TC = 25°C Pulse Test 32 2.0 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) TC = 25°C Pulse Test 1.6 VGS = 10V 1.2 20V 24 ID = 15A 16 10A 8 5A 0 0 4 8 12 16 20 0.8 0.4 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 20 TC = 25°C VDS = 50V Pulse Test 101 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) 3 2 100 7 5 3 2 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS = 10V Pulse Test TC=25°C DRAIN CURRENT ID (A) 16 75°C 125°C 12 8 4 0 0 4 8 12 16 20 10–1 –1 10 23 5 7 100 23 5 7 101 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FK10KM-9 HIGH-SPEED SWITCHING USE CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 103 7 5 3 2 102 7 5 3 2 Coss Ciss SWITCHING TIME (ns) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 102 7 5 3 2 101 10–1 23 5 7 100 23 Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω CAPACITANCE Ciss, Coss, Crss (pF) td(off) tf tr td(on) 5 7 101 Crss 101 Tch = 25°C 7 f = 1MHz 5 VGS = 0V 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 SOURCE CURRENT IS (A) 20 Tch = 25°C ID = 10A 16 VDS = 100V 200V 12 400V 8 VGS = 0V Pulse Test 32 24 TC=125°C 16 25°C 75°C 4 8 0 0 20 40 60 80 100 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10–1 0 50 100 150 200 250 5.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 4.0 VGS = 10V ID = 1/2ID Pulse Test 3.0 2.0 1.0 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) Feb.1999 MITSUBISHI Nch POWER MOSFET FK10KM-9 HIGH-SPEED SWITCHING USE DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = 0V ID = 1mA 1.2 REVERSE RECOVERY TIME trr (ns) 1.4 1.0 3 2 102 7 5 3 2 101 100 trr 3 2 101 7 5 Irr Tch = 25°C Tch = 150°C 23 5 7 101 23 3 2 0.8 0.6 0.4 –50 0 50 100 150 100 5 7 102 CHANNEL TEMPERATURE Tch (°C) SOURCE CURRENT IS (A) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) DIODE REVERSE VS. SOURCE CURRENT dis/dt CHARACTERISTIC (TYPICAL) 5 5 IS = 10A VGS = 0V 3 3 VDD = 250V 2 2 trr 102 7 5 3 2 Irr 101 7 5 101 23 5 7 102 Tch = 25°C Tch = 150°C 7 5 23 5 7 103 100 101 7 5 3 2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D=1 3 2 0.5 100 7 5 3 2 7 5 3 2 0.2 0.1 PDM 0.05 0.02 0.01 Single Pulse tw T D= tw T 10–1 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s) SOURCE CURRENT dis/dt (–A/µs) REVERSE RECOVERY CURRENT Irr (A) Feb.1999 DIODE REVERSE VS. SOURCE CURRENT CHARACTERISTIC (TYPICAL) 102 103 dis/dt = –100A /µs 7 7 VGS = 0V 5 5 VDD = 250V