FK10VS-10

MITSUBISHI Nch POWER MOSFET FK10VS-10 HIGH-SPEED SWITCHING USE FK10VS-10 OUTLINE DRAWING r 1.5MAX. Dimensions in mm 4.5 1.3 10.5MAX. 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 3.0 +0.3 –0.5 0 +0.3 –0 1 5 0.8 0.5 qwe wr 2.6 ± 0.4 ¡VDSS ............................................................................... 500V ¡rDS (ON) (MAX) ............................................................. 1.13Ω ¡ID ......................................................................................... 10A ¡Integrated Fast Recovery Diode (MAX.) ....... 150ns q q GATE w DRAIN e SOURCE r DRAIN e TO-220S APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 500 ±30 10 30 10 30 125 –55 ~ +150 –55 ~ +150 1.2 4.5 Unit V V A A A A W °C °C g Feb.1999 (1.5) MITSUBISHI Nch POWER MOSFET FK10VS-10 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 500V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 500 ±30 — — 2 — — 3.3 — — — — — — — — — — Typ. — — — — 3 0.88 4.40 5.5 1100 130 20 20 30 95 35 1.5 — — Max. — — ±10 1 4 1.13 5.65 — — — — — — — — 2.0 1.0 150 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W ns Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω IS = 5A, VGS = 0V Channel to case IS = 10A, dis/dt = –100A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 200 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 5 3 2 101 7 5 3 2 7 5 3 2 tw=10µs 100µs 1ms 10ms TC = 25°C Single Pulse DC 160 120 80 100 40 10–1 0 0 50 100 150 200 7 50 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 CASE TEMPERATURE TC (°C) MITSUBISHI Nch POWER MOSFET FK10VS-10 HIGH-SPEED SWITCHING USE OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V 6V DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 20 10 OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V 6V PD = 125W 16 TC = 25°C Pulse Test 8 12 6 5V TC = 25°C Pulse Test 8 5V PD= 125W 4 4 2 4V 0 0 10 20 30 40 50 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 2.0 TC = 25°C Pulse Test 1.6 TC = 25°C Pulse Test 32 ID = 20A VGS = 10V 20V 24 1.2 16 10A 8 5A 0 4 8 12 16 20 0.8 0.4 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 20 TC = 25°C VDS = 50V Pulse Test 101 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS = 10V Pulse Test TC=25°C 75°C 125°C DRAIN CURRENT ID (A) 16 12 3 2 100 7 5 3 2 10–1 –1 10 23 5 7 100 8 4 0 0 4 8 12 16 20 23 5 7 101 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FK10VS-10 HIGH-SPEED SWITCHING USE CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 103 7 5 3 2 102 7 5 3 2 Coss Ciss 103 7 5 SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 3 2 102 7 5 3 2 101 10–1 23 td(off) tf tr td(on) 5 7 100 23 5 7 101 Crss 101 Tch = 25°C 7 f = 1MHz 5 VGS = 0V 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 VGS = 0V Pulse Test TC=125°C GATE-SOURCE VOLTAGE VGS (V) 20 16 VDS = 100V 200V 12 400V 8 SOURCE CURRENT IS (A) Tch = 25°C ID = 10A 32 24 25°C 75°C 8 16 4 0 0 20 40 60 80 100 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10–1 0 50 100 150 200 250 5.0 VGS = 10V ID = 1/2ID Pulse Test THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 4.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 3.0 2.0 1.0 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) Feb.1999 MITSUBISHI Nch POWER MOSFET FK10VS-10 HIGH-SPEED SWITCHING USE DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = 0V ID = 1mA 1.2 REVERSE RECOVERY TIME trr (ns) 1.4 1.0 3 2 102 7 5 3 2 101 0 10 trr 3 2 101 7 5 Irr Tch = 25°C Tch = 150°C 23 5 7 101 23 3 2 0.8 0.6 0.4 –50 0 50 100 150 100 5 7 102 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) DIODE REVERSE VS. SOURCE CURRENT dis/dt CHARACTERISTIC (TYPICAL) 5 5 IS = 10A VGS = 0V 3 3 VDD = 250V 2 2 trr 102 7 5 3 2 Irr 101 7 5 101 0 Tch = 25°C 10 Tch = 150°C 7 5 23 5 7 103 SOURCE CURRENT IS (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 5 3 2 D=1 0.5 0.2 0.1 0.05 0.02 0.01 PDM tw T D= tw T 101 7 5 3 2 REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) 10–1 7 5 3 2 23 5 7 102 Single Pulse 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s) SOURCE CURRENT dis/dt (–A/µs) REVERSE RECOVERY CURRENT Irr (A) Feb.1999 DIODE REVERSE VS. SOURCE CURRENT CHARACTERISTIC (TYPICAL) 102 103 dis/dt = –100A/µs 7 7 VGS = 0V 5 5 VDD = 250V