MITSUBISHI Nch POWER MOSFET
FK14SM-12
HIGH-SPEED SWITCHING USE
FK14SM-12
OUTLINE DRAWING
15.9MAX.
Dimensions in mm 4.5 1.5
r
2
2
4
20.0
φ 3.2
5.0
1.0 q 5.45 w e 5.45
19.5MIN.
4.4
0.6
2.8
4 wr q GATE w DRAIN e SOURCE r DRAIN e
¡VDSS ................................................................................ 600V ¡rDS (ON) (MAX) .............................................................. 0.75Ω ¡ID ......................................................................................... 14A ¡Integrated Fast Recovery Diode (MAX.) ........150ns
q
TO-3P
APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IS ISM PD Tch Tstg —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 600 ±30 14 42 14 42 250 –55 ~ +150 –55 ~ +150 4.8
Unit V V A A A A W °C °C g
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK14SM-12
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 7A, VGS = 10V ID = 7A, VGS = 10V ID = 7A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 600 ±30 — — 2 — — 6.0 — — — — — — — — — — Typ. — — — — 3 0.58 4.06 9.0 2100 250 40 40 60 250 85 1.5 — — Max. — — ±10 1 4 0.75 5.25 — — — — — — — — 2.0 0.50 150
Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W ns
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 200V, ID = 7A, VGS = 10V, RGEN = RGS = 50Ω
IS = 7A, VGS = 0V Channel to case IS = 14A, dis/dt = –100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 250
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2
200
tw=10µs 100µs 1ms 10ms TC = 25°C Single Pulse DC
150
100
50
0
0
50
100
150
200
10–1 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
CASE TEMPERATURE TC (°C)
MITSUBISHI Nch POWER MOSFET
FK14SM-12
HIGH-SPEED SWITCHING USE
OUTPUT CHARACTERISTICS (TYPICAL) 50 TC = 25°C Pulse Test 20 OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V10V6V TC = 25°C Pulse Test PD = 250W
DRAIN CURRENT ID (A)
40 VGS = 20V 10V 6V
DRAIN CURRENT ID (A)
16
30
12
5V
20 5V 10 PD = 250W 4V 0 0 10 20 30 40 50
8
4 4V 0 0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40 2.0 TC = 25°C Pulse Test 32
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) TC = 25°C Pulse Test
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω)
1.6
24 ID = 20A 16 14A 8 7A
1.2
VGS = 10V 20V
0.8
0.4 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 40 TC = 25°C VDS = 50V Pulse Test 102 7 5
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS = 10V Pulse Test
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE yfs (S)
32
24
3 2 101 7 5 3 2 100 0 10 23 125°C
16
TC = 25°C 75°C
8
0
0
4
8
12
16
20
5 7 101
23
5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK14SM-12
HIGH-SPEED SWITCHING USE
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 5 3 2
CAPACITANCE Ciss, Coss, Crss (pF)
SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5
SWITCHING TIME (ns)
Ciss
103 7 5 3 2 102 7 5 Crss 3 Tch = 25°C 2 f = 1MHz VGS = 0V 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) Coss
3 2 102 7 5 3 2 101 100 23
Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω td(off)
tf tr td(on)
5 7 101
23
5 7 102
DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 50
SOURCE CURRENT IS (A)
20 Tch = 25°C ID = 14A 16 VDS = 100V 12
VGS = 0V Pulse Test 40 TC=125°C 30 25°C 20 75°C
8
200V 400V
4
10
0
0
20
40
60
80
100
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10–1 0 50 100 150 200 250 5.0
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 4.0
VGS = 10V ID = 1/2ID Pulse Test
3.0
2.0
1.0
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK14SM-12
HIGH-SPEED SWITCHING USE
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = 0V ID = 1mA 1.2 REVERSE RECOVERY TIME trr (ns) 1.4
1.0
3 2 102 7 5
trr
3 2 101 7 5 Irr 3 2
0.8
0.6
3 2 101 0 10 23 5 7 101
Tch = 25°C Tch = 150°C 23
0.4
–50
0
50
100
150
100 5 7 102
CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) DIODE REVERSE VS. SOURCE CURRENT dis/dt CHARACTERISTIC (TYPICAL) 103 102 IS = 14A 7 7 5 5 VGS = 0V 3 VDD = 250V 3 trr 2 2 102 7 5 3 2 101 7 5 3 2 101 7 5 3 2 100 7 5 3 2
SOURCE CURRENT IS (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2
REVERSE RECOVERY CURRENT Irr (A)
REVERSE RECOVERY TIME trr (ns)
Irr
100 101
Tch = 25°C Tch = 150°C 23 5 7 102 23
100 7 D=1 5 3 0.5 2 0.2 10–1 0.1 7 5 3 2
PDM
tw T
10–1 5 7 103
0.05 D= tw 0.02 T 0.01 Single Pulse 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s)
SOURCE CURRENT dis/dt (–A/µs)
REVERSE RECOVERY CURRENT Irr (A)
Feb.1999
DIODE REVERSE VS. SOURCE CURRENT CHARACTERISTIC (TYPICAL) 102 103 dis/dt = –100A/µs 7 7 VGS = 0V 5 5 VDD = 250V
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