MITSUBISHI Nch POWER MOSFET
FK20SM-10
HIGH-SPEED SWITCHING USE
FK20SM-10
OUTLINE DRAWING
15.9MAX.
Dimensions in mm 4.5
1.5
r
2
2
4
20.0
φ 3.2
5.0
1.0 q 5.45 w e 5.45
19.5MIN.
4.4
0.6
2.8
4 wr q GATE w DRAIN e SOURCE r DRAIN e
¡VDSS ................................................................................ 500V ¡rDS (ON) (MAX) .............................................................. 0.36Ω ¡ID ......................................................................................... 20A ¡Integrated Fast Recovery Diode (MAX.) ........150ns
q
TO-3P
APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IS ISM PD Tch Tstg —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 500 ±30 20 60 20 60 275 –55 ~ +150 –55 ~ +150 4.8
Unit V V A A A A W °C °C g
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK20SM-10
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 500V, VGS = 0V ID = 1mA, VDS = 10V ID = 10A, VGS = 10V ID = 10A, VGS = 10V ID = 10A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 500 ±30 — — 2 — — 7.0 — — — — — — — — — — Typ. — — — — 3 0.28 2.80 10.0 2800 350 55 60 80 270 80 1.5 — — Max. — — ±10 1 4 0.36 3.60 — — — — — — — — 2.0 0.45 150
Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W ns
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 200V, ID = 10A, VGS = 10V, RGEN = RGS = 50Ω
IS = 10A, VGS = 0V Channel to case IS = 20A, dis/dt = –100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 300
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2
250 200 150 100 50 0
tw=100µs 1ms 10ms 100ms DC
TC = 25°C Single Pulse
0
50
100
150
200
10–1 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
CASE TEMPERATURE TC (°C)
MITSUBISHI Nch POWER MOSFET
FK20SM-10
HIGH-SPEED SWITCHING USE
OUTPUT CHARACTERISTICS (TYPICAL) 50 PD = 275W VGS = 20V 10V 20 TC = 25°C Pulse Test
DRAIN CURRENT ID (A)
OUTPUT CHARACTERISTICS (TYPICAL) VSD = 20V 10V PD = 275W 6V 5V
DRAIN CURRENT ID (A)
40
16
6V
30
12 TC = 25°C Pulse Test 8
20
5V
10 4V 0 0 10 20 30 40 50
4 4V 0 0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω)
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.5 TC = 25°C Pulse Test 0.4
TC = 25°C Pulse Test 32
VGS = 10V 20V
24 ID = 40A 16 20A 10A 0 0 4 8 12 16 20
0.3
0.2
8
0.1 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 40 TC = 25°C VDS = 50V Pulse Test 102 7 5
FORWARD TRANSFER ADMITTANCE yfs (S)
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS = 10V Pulse Test
DRAIN CURRENT ID (A)
32
24
3 2 101 7 5 3 2 100 0 10 23 TC = 25°C 75°C 125°C
16
8
0
0
4
8
12
16
20
5 7 101
23
5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK20SM-10
HIGH-SPEED SWITCHING USE
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 7 5
SWITCHING TIME (ns)
SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 102 tf 7 td(on) 5 tr 3 2 101 100 23 5 7 101 23 5 7 102 Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω
CAPACITANCE Ciss, Coss, Crss (pF)
3 2 103 7 5 3 2
Ciss
td(off)
Coss
102 7 5 Tch = 25°C Crss f = 1MHz 3 VGS = 0V 2 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 50
SOURCE CURRENT IS (A)
20 Tch = 25°C ID = 20A 16 VDS = 100V 12 400V 200V
TC=125°C 25°C 75°C
VGS = 0V Pulse Test
40
30
8
20
4
10
0
0
40
80
120
160
200
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10–1 0 50 100 150 200 250 5.0
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 4.0
VGS = 10V ID = 1/2ID Pulse Test
3.0
2.0
1.0
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK20SM-10
HIGH-SPEED SWITCHING USE
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = 0V ID = 1mA 1.2 REVERSE RECOVERY TIME trr (ns) 1.4
1.0
3 2 trr 102 7 5 3 2 101 0 10 23 5 7 101
3 2 101 7 5 3 Tch = 25°C 2 Tch = 150°C 100 23 5 7 102
0.8
Irr
0.6
0.4
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) DIODE REVERSE VS. SOURCE CURRENT dis/dt CHARACTERISTIC (TYPICAL) 5 5 IS = 20A VGS = 0V 3 3 trr VDD =250V 2 2 102 7 5 3 2 101 7 5 101 23 5 7 102 Irr 101 7 5 3 2 Tch = 25°C Tch = 150°C 7 5 23 5 7 103 100
SOURCE CURRENT IS (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2
REVERSE RECOVERY CURRENT Irr (A)
REVERSE RECOVERY TIME trr (ns)
100 7 D=1 5 3 0.5 2 0.2 10–1 7 0.1 5 3 2
PDM
tw T
0.05 D= tw 0.02 T 0.01 Single Pulse 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s)
SOURCE CURRENT dis/dt (–A/µs)
Feb.1999
REVERSE RECOVERY CURRENT Irr (A)
DIODE REVERSE VS. SOURCE CURRENT CHARACTERISTIC (TYPICAL) 102 103 dis/dt = –100A/µs 7 7 VGS = 0V 5 5 VDD = 250V
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