FK25SM-6

MITSUBISHI Nch POWER MOSFET FK25SM-6 HIGH-SPEED SWITCHING USE FK25SM-6 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 2 2 4 20.0 φ 3.2 5.0 1.0 q 5.45 w e 5.45 19.5MIN. 4.4 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN e ¡VDSS ................................................................................ 300V ¡rDS (ON) (MAX) .............................................................. 0.21Ω ¡ID ......................................................................................... 25A ¡Integrated Fast Recovery Diode (MAX.) ........150ns q TO-3P APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 300 ±30 25 75 25 75 250 –55 ~ +150 –55 ~ +150 4.8 Unit V V A A A A W °C °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FK25SM-6 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 300V, VGS = 0V ID = 1mA, VDS = 10V ID = 12A, VGS = 10V ID = 12A, VGS = 10V ID = 12A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 300 ±30 — — 2 — — 7.0 — — — — — — — — — — Typ. — — — — 3 0.16 1.92 11.0 2100 420 90 35 85 240 100 1.5 — — Max. — — ±10 1 4 0.21 2.52 — — — — — — — — 2.0 0.50 150 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W ns Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 150V, ID = 12A, VGS = 10V, RGEN = RGS = 50Ω IS = 12A, VGS = 0V Channel to case IS = 25A, dis/dt = –100A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 250 MAXIMUM SAFE OPERATING AREA 3 2 POWER DISSIPATION PD (W) 200 DRAIN CURRENT ID (A) 150 102 7 5 3 2 101 7 5 3 2 tw= 100µs 1ms 100 50 0 0 50 100 150 200 10ms TC = 25°C 100 DC Single Pulse 7 5 3 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 CASE TEMPERATURE TC (°C) MITSUBISHI Nch POWER MOSFET FK25SM-6 HIGH-SPEED SWITCHING USE OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V TC = 25°C 7V Pulse Test DRAIN CURRENT ID (A) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V 5.5V 50 20 DRAIN CURRENT ID (A) 40 6V 16 PD = 250W 12 TC = 25°C Pulse Test 4.5V 4 4V 5V 30 20 5V 10 PD = 250W 4V 0 0 10 20 30 40 50 8 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 10 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) TC = 25°C Pulse Test 8 ID = 40A 0.5 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) TC = 25°C Pulse Test 0.4 6 25A 4 15A 2 0.3 VGS = 10V 0.2 20V 0.1 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 40 TC = 25°C VDS = 50V Pulse Test 102 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) 3 2 101 7 5 3 2 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS = 10V Pulse Test DRAIN CURRENT ID (A) 32 24 TC = 25°C 125°C 75°C 16 8 0 0 4 8 12 16 20 100 0 10 23 5 7 101 23 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FK25SM-6 HIGH-SPEED SWITCHING USE CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 5 3 2 CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 SWITCHING TIME (ns) Ciss 103 7 5 3 2 102 7 5 Coss 3 2 102 7 5 3 2 101 100 23 td(off) Tch = 25°C VDD = 150V VGS = 10V RGEN = RGS = 25Ω tf tr td(on) Crss 3 Tch = 25°C 2 f = 1MHz VGS = 0V 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) 5 7 101 23 5 7 102 DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 50 SOURCE CURRENT IS (A) 20 Tch = 25°C ID = 25A 16 VGS = 50V 12 100V 8 200V TC = 125°C 40 VGS = 0V Pulse Test 25°C 30 75°C 20 4 10 0 0 20 40 60 80 100 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10–1 0 50 100 150 200 250 5.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 4.0 VGS = 10V ID = 1/2ID Pulse Test 3.0 2.0 1.0 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) Feb.1999 MITSUBISHI Nch POWER MOSFET FK25SM-6 HIGH-SPEED SWITCHING USE DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = 0V ID = 1mA 1.2 REVERSE RECOVERY TIME trr (ns) 1.4 1.0 3 2 102 7 5 3 2 101 100 23 5 7 101 trr Irr Tch = 25°C Tch = 150°C 23 3 2 101 7 5 3 2 0.8 0.6 0.4 –50 0 50 100 150 100 5 7 102 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W) SOURCE CURRENT IS (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) DIODE REVERSE VS. SOURCE CURRENT dis/dt CHARACTERISTIC (TYPICAL) 5 5 IS = 25A VGS = 0V 3 3 VDD = 150V 2 2 trr 101 102 7 7 5 5 3 2 101 7 5 101 23 5 7 102 3 2 Tch = 25°C Tch = 150°C 7 5 23 5 7 103 100 Irr 100 7 D=1 5 3 0.5 2 0.2 –1 10 0.1 7 5 3 2 PDM tw T 0.05 D= tw 0.02 T 0.01 Single Pulse 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s) SOURCE CURRENT dis/dt (–A/µs) REVERSE RECOVERY CURRENT Irr (A) Feb.1999 DIODE REVERSE VS. SOURCE CURRENT CHARACTERISTIC (TYPICAL) 102 103 dis/dt = –100A/µs 7 7 VGS = 0V 5 5 VDD = 150V