FS100SMJ-03

MITSUBISHI Nch POWER MOSFET FS100SMJ-03 HIGH-SPEED SWITCHING USE FS100SMJ-03 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 5.0 f 3.2 2 2 4 20.0 19.5MIN. 4.4 G 0.6 2.8 1.0 q 5.45 w e 5.45 4 wr ¡4V DRIVE ¡VDSS ................................................................................. 30V ¡rDS (ON) (MAX) ............................................................ 4.7mΩ ¡ID ...................................................................................... 100A ¡Integrated Fast Recovery Diode (TYP.) .......... 100ns q q GATE w DRAIN e SOURCE r DRAIN e TO-3P APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 30 ± 20 100 400 100 100 400 150 –55 ~ +150 –55 ~ +150 4.8 Unit V V A A A A A W °C °C g Feb.1999 L = 30µH MITSUBISHI Nch POWER MOSFET FS100SMJ-03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage (Tch = 25° C) Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 50A, VGS = 10V ID = 50A, VGS = 4V ID = 50A, VGS = 10V ID = 50A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 30 — — 1.0 — — — — — — — — — — — — — — Typ. — — — 1.5 3.5 4.7 0.175 80 8000 2250 1300 55 190 800 470 1.0 — 100 Max. — ±0.1 0.1 2.0 4.7 8.0 0.235 — — — — — — — — 1.5 0.83 — Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 15V, I D = 50A, VGS = 10V, RGEN = RGS = 50Ω IS = 50A, VGS = 0V Channel to case IS = 50A, dis/dt = –50A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 250 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 5 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 tw = 10ms 100ms 1ms 10ms DC TC = 25°C Single Pulse 200 150 100 50 0 0 50 100 150 200 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 100 VGS = 10V 6V 3V 5V 4V TC = 25°C Pulse Test 50 VGS = 10V 6V 40 5V 4V 3V DRAIN CURRENT ID (A) 80 60 DRAIN CURRENT ID (A) 30 40 2V 20 2V 20 10 TC = 25°C Pulse Test 0 0 0.2 0.4 0.6 0.8 1.0 0 0 0.1 0.2 0.3 0.4 0.5 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS100SMJ-03 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 1.0 TC = 25°C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 10 TC = 25°C Pulse Test 0.8 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 8 VGS = 4V 0.6 ID = 100A 6 0.4 70A 50A 4 10V 0.2 2 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN CURRENT ID (A) 0 0 2 4 6 8 10 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 100 TC = 25°C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 4 3 2 101 7 5 4 3 2 TC = 25°C 75°C 125°C DRAIN CURRENT ID (A) 60 40 20 FORWARD TRANSFER ADMITTANCE yfs (S) 80 0 0 2 4 6 8 10 100 0 10 VDS = 10V Pulse Test 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 105 7 5 3 2 Tch = 25°C f = 1MHZ VGS = 0V SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 3 2 103 7 5 3 2 102 7 5 3 2 101 0 10 td(off) tf Tch = 25°C VDD = 15V VGS = 10V RGEN = RGS = 50Ω 104 7 5 3 2 103 7 5 3 2 Ciss SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) Coss Crss tr td(on) 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS100SMJ-03 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 100 VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VGS (V) 10 Tch = 25°C ID = 100A 8 SOURCE CURRENT IS (A) 75 6 50 TC = 125°C 75°C 25°C 4 VDS = 15V 20V 25V 2 25 0 0 40 80 120 160 200 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 4.0 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 3.2 2.4 1.6 0.8 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 D = 1.0 7 5 0.5 3 0.2 2 0.1 1.2 1.0 0.8 PDM tw 10–1 7 5 3 2 0.05 0.02 0.01 Single Pulse T D= tw T 0.6 0.4 –50 0 50 100 150 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s) Feb.1999 CHANNEL TEMPERATURE Tch (°C)