MITSUBISHI Nch POWER MOSFET
FS10ASJ-06
HIGH-SPEED SWITCHING USE
FS10ASJ-06
OUTLINE DRAWING
6.5 5.0 ± 0.2
Dimensions in mm
r
5.5 ± 0.2
1.5 ± 0.2
0.5 ± 0.1
1.0MAX.
2.3MIN.
10MAX.
1.0
A
0.5 ± 0.2 0.8
0.9MAX.
2.3
2.3
2.3
q
w
e
wr q GATE w DRAIN e SOURCE r DRAIN e
¡4V DRIVE ¡VDSS ................................................................................. 60V ¡rDS (ON) (MAX) ............................................................. 70mΩ ¡ID ........................................................................................ 10A ¡Integrated Fast Recovery Diode (TYP.) ............ 55ns
q
MP-3
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 60 ± 20 10 40 10 10 40 30 –55 ~ +150 –55 ~ +150 0.26
Unit V V A A A A A W °C °C g
Jan.1999
L = 100µH
MITSUBISHI Nch POWER MOSFET
FS10ASJ-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
(Tch = 25° C)
Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, V GS = 4V ID = 5A, V GS = 10V ID = 5A, V DS = 5V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 60 — — 1.0 — — — — — — — — — — — — — — Typ. — — — 1.5 53 66 0.265 13 800 190 80 14 17 65 40 1.0 — 55 Max. — ±0.1 0.1 2.0 70 91 0.35 — — — — — — — — 1.5 4.17 —
Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns
Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 30V, I D = 5A, V GS = 10V, RGEN = RGS = 50Ω
IS = 5A, VGS = 0V Channel to case IS = 10A, dis/dt = –100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 7 5
TC = 25°C Single Pulse tw = 10ms
40
100ms 1ms 10ms DC
30
20
10
0
0
50
100
150
200
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL)
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 20
Tc = 25°C Pulse Test VGS = 10V PD = 30W 8V 6V
10
4V
VGS = 10V 6V
8V
4V
DRAIN CURRENT ID (A)
16
DRAIN CURRENT ID (A)
8
12
6
3V
8
3V
4
4
2
Tc = 25°C Pulse Test
0
0
0.4
0.8
1.2
1.6
2.0
0
0
0.2
0.4
0.6
0.8
1.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Jan.1999
MITSUBISHI Nch POWER MOSFET
FS10ASJ-06
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
Tc = 25°C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 100
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ)
Tc = 25°C Pulse Test VGS = 4V
1.6
80
1.2
60
0.8
ID = 15A 10A 5A
40
10V
0.4
20 0
0
0
2
4
6
8
10
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 40
Tc = 25°C VDS = 10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 4 3 2 101 7 5 4 3 2
75°C TC = 25°C 125°C VDS = 5V Pulse Test
DRAIN CURRENT ID (A)
24
16
8
FORWARD TRANSFER ADMITTANCE yfs (S)
32
0
0
2
4
6
8
10
100 0 10
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 104
CAPACITANCE Ciss, Coss, Crss (pF)
Tch = 25°C f = 1MHZ VGS = 0V
SWITCHING CHARACTERISTICS (TYPICAL) 102 7 5 4 3 2
td(on) td(off)
SWITCHING TIME (ns)
7 5 3 2
tf
103 7 5 3 2 102 7 5 3 2
Ciss
Coss Crss
101 7 5 4 3 2 100 0 10
tr
Tch = 25°C VDD = 30V VGS = 10V RGEN = RGS = 50Ω
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
2 3 4 5 7 101
2 3 4 5 7 102
DRAIN CURRENT ID (A)
Jan.1999
MITSUBISHI Nch POWER MOSFET
FS10ASJ-06
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40
VGS = 0V Pulse Test
GATE-SOURCE VOLTAGE VGS (V)
10
Tch = 25°C ID = 10A
SOURCE CURRENT IS (A)
8
VDS = 10V 20V 40V
32
6
24
TC = 125°C 75°C 25°C
4
16
2
8
0
0
4
8
12
16
20
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 4.0
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL)
VDS = 10V ID = 1mA
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
3.2
2.4
1.6
0.8
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 5 D = 1.0 3 0.5 2
0.2
1.2
1.0
0.8
PDM
tw
100 7 5 3 2
0.1 0.05 0.02 0.01 Single Pulse
T D= tw T
0.6
0.4
–50
0
50
100
150
10–1 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s)
Jan.1999
CHANNEL TEMPERATURE Tch (°C)
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