MITSUBISHI Nch POWER MOSFET
FS2KMJ-3
HIGH-SPEED SWITCHING USE
FS2KMJ-3
OUTLINE DRAWING
10 ± 0.3
6.5 ± 0.3 3 ± 0.3
Dimensions in mm
2.8 ± 0.2
15 ± 0.3
f 3.2 ± 0.2
14 ± 0.5
3.6 ± 0.3
1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15
E
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25
4.5 ± 0.2
123
2.6 ± 0.2
¡4V DRIVE ¡VDSS ................................................................................ 150V ¡rDS (ON) (MAX) .............................................................. 0.75 Ω ¡ID ............................................................................................ 2A ¡Integrated Fast Recovery Diode (TYP.) ............. 65ns ¡Viso ................................................................................ 2000V
w
q
q GATE w DRAIN e SOURCE
e
TO-220FN
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg Viso —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight L = 100µH VGS = 0V VDS = 0V
Conditions
Ratings 150 ±20 2 8 2 2 8 15 –55 ~ +150
Unit V V A A A A A W °C °C V g
Feb.1999
AC for 1minute, Terminal to case Typical value
–55 ~ +150 2000 2.0
MITSUBISHI Nch POWER MOSFET
FS2KMJ-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
(Tch = 25° C)
Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 150V, V GS = 0V ID = 1mA, VDS = 10V ID = 1A, VGS = 10V ID = 1A, V GS = 4V ID = 1A, V GS = 10V ID = 1A, V DS = 5V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 150 — — 1.0 — — — — — — — — — — — — — — Typ. — — — 1.5 0.58 0.61 0.58 4.5 360 62 16 11 9 35 13 1.0 — 65 Max. — ±0.1 0.1 2.0 0.75 0.81 0.75 — — — — — — — — 1.5 8.33 —
Unit V µA mA V Ω Ω V S pF pF pF ns ns ns ns V °C/W ns
Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 80V, I D = 1A, V GS = 10V, RGEN = RGS = 50Ω
IS = 1A, VGS = 0V Channel to case IS = 2A, dis/dt = –100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 20
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA 2 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2
TC = 25°C Single Pulse
16
tw = 10ms 100ms 1ms 10ms DC
12
8
4
0
0
50
100
150
200
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL)
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 5.0
Tc = 25°C Pulse Test
2.0
Tc = 25°C Pulse Test VGS = 10V 6V 4V 3V 2.5V
DRAIN CURRENT ID (A)
4.0
VGS = 10V 6V 4V 3V PD = 15W
DRAIN CURRENT ID (A)
1.6
3.0
1.2
2.0
2.5V
0.8
1.0
0.4
0
0
1.0
2.0
3.0
4.0
5.0
0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS2KMJ-3
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 5.0
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
Tc = 25°C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 1.0
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω)
Tc = 25°C Pulse Test VGS = 4V 10V
4.0
0.8
3.0
ID = 3A 2A
0.6
2.0
0.4
1.0
1A
0.2 0 10–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A)
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 10
Tc = 25°C VDS = 10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 VDS = 5V 7 Pulse Test 5 4 3 2 100 7 5 4 3 2
TC = 25°C 75°C 125°C
DRAIN CURRENT ID (A)
6
4
2
FORWARD TRANSFER ADMITTANCE yfs (S)
8
0
0
2
4
6
8
10
10–1 –1 10
2 3 4 5 7 100
2 3 4 5 7 101
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 103
CAPACITANCE Ciss, Coss, Crss (pF)
Tch = 25°C VGS = 0V 7 f = 1MHZ
SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 –1 10
tf td(off) td(on) tr Tch = 25°C VDD = 80V VGS = 10V RGEN = RGS = 50Ω
102 7 5 3 2 101 7 5 3 2
Coss
Crss
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
SWITCHING TIME (ns)
5 3 2
Ciss
2 3 4 5 7 100
2 3 4 5 7 101
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS2KMJ-3
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 10
SOURCE CURRENT IS (A)
VGS = 0V Pulse Test
10
Tch = 25°C ID = 2A
8
8
6
VDS = 50V 80V 100V
6
TC = 125°C
4
4
75°C 25°C
2
2
0
0
4
8
12
16
20
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 4.0
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL)
VDS = 10V ID = 1mA
3.2
2.4
1.6
0.8
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2
D = 1.0 0.5 0.2 PDM 0.1 0.05 0.02 0.01 Single Pulse
tw T D= tw T
1.2
1.0
0.8
0.6
0.4
–50
0
50
100
150
10–1 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s)
Feb.1999
CHANNEL TEMPERATURE Tch (°C)
很抱歉,暂时无法提供与“FS2KMJ-3”相匹配的价格&库存,您可以联系我们找货
免费人工找货