MITSUBISHI Nch POWER MOSFET
FS30VS-2
HIGH-SPEED SWITCHING USE
FS30VS-2
OUTLINE DRAWING
1.5MAX.
r 10.5MAX.
Dimensions in mm
4.5 1.3
1.5MAX. 8.6 ± 0.3 9.8 ± 0.5
0.3 3.0 +0.5 –
0 –0
+0.3
1 5 0.8
B
0.5
qwe wr
2.6 ± 0.4
¡10V DRIVE ¡VDSS ................................................................................ 100V ¡rDS (ON) (MAX) ........................................................... 100mΩ ¡ID ......................................................................................... 30A ¡Integrated Fast Recovery Diode (TYP.) ............. 95ns
q
q GATE w DRAIN e SOURCE r DRAIN e
TO-220S
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 100 ±20 30 120 30 30 120 45 –55 ~ +150 –55 ~ +150 1.2
4.5
Unit V V A A A A A W °C °C g
Feb.1999
L = 100µH
(1.5)
MITSUBISHI Nch POWER MOSFET
FS30VS-2
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
(Tch = 25° C)
Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 100V, V GS = 0V ID = 1mA, VDS = 10V ID = 15A, VGS = 10V ID = 15A, VGS = 10V ID = 15A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 100 — — 2.0 — — — — — — — Typ. — — — 3.0 69 1.04 18 1250 230 105 25 60 60 50 1.0 — 95 Max. — ±0.1 0.1 4.0 100 1.50 — — — — — — — — 1.5 2.77 —
Unit V µA mA V mΩ V S pF pF pF ns ns ns ns V °C/W ns
Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 50V, ID = 15A, VGS = 10V, RGEN = RGS = 50Ω
— — — — — —
IS = 15A, VGS = 0V Channel to case IS = 30A, dis/dt = –100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA 3 2 102 7 5 3 2 101 7 5 3 2
40
tw = 10ms
30
20
100ms 1ms
10
0
0
50
100
150
200
100 10ms 7 TC = 25°C 5 Single Pulse DC 3 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 20
VGS = 20V 10V 8V 7V TC = 25°C Pulse Test 6V
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 50
PD = 45W VGS = 20V 10V 8V
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
40
7V
16
30
TC = 25°C Pulse Test 6V
12
20
8
5V
10
5V
4
0
0
1
2
3
4
5
0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30VS-2
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 5.0 100 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL)
TC = 25°C Pulse Test VGS = 10V
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ)
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
4.0
50A
80
20V
3.0
30A
60
2.0
40
1.0
TC = 25°C Pulse Test
10A
20 0
0
0
4
8
12
16
20
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 50
TC = 25°C VDS = 10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 VDS = 10V 7 Pulse Test 5 4 3 2 101 7 5 4 3 2
DRAIN CURRENT ID (A)
30
20
FORWARD TRANSFER ADMITTANCE yfs (S)
40
10
TC = 25°C 75°C 125°C
0
0
4
8
12
16
20
100 0 10
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2
Tch = 25°C
SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10
Tch = 25°C VDD = 50V VGS = 10V RGEN = RGS = 50Ω
104 f = 1MHZ
103 7 5 3 2 102 7 5 3 2
Ciss
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
7 VGS = 0V 5 3 2
td(off) tf tr td(on)
Coss Crss
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
2 3 4 5 7 101
2 3 4 5 7 102
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30VS-2
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 50
VGS = 0V Pulse Test
GATE-SOURCE VOLTAGE VGS (V)
20
Tch = 25°C ID = 30A
16
SOURCE CURRENT IS (A)
40
12
VDS = 20V
30
TC = 125°C
8
50V 80V
20
75°C
4
10
25°C
0
0
10
20
30
40
50
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 5.0
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL)
VDS = 10V ID = 1mA
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
4.0
3.0
2.0
1.0
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D = 1.0 3 2 0.5 100 0.2 7 0.1 5 3 2 10–1 7 5 3 2
1.2
1.0
0.8
0.05 0.02 0.01 Single Pulse
PDM
tw T D= tw T
0.6
0.4
–50
0
50
100
150
10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s)
Feb.1999
CHANNEL TEMPERATURE Tch (°C)
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