FS3KMA-5A

MITSUBISHI Nch POWER MOSFET MITSUBISHI Nch POWER MOSFET e. tion. cifica t to chang c al spe t a fins are subje is no limit is e: Th tric Notice parame Som P MIN RELI ARY FS3KMA-5A FS3KMA-5A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS3KMA-5A OUTLINE DRAWING 10 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 f 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 6.5 ± 0.3 3 ± 0.3 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 ŒŽ  2.6 ± 0.2 q 10V DRIVE q VDSS ............................................................................... 250V q rDS (ON) (MAX) ................................................................ 2.0Ω q ID ........................................................................................... 3A Œ Œ GATE  DRAIN Ž SOURCE Ž TO-220FN APPLICATION SMPS, High speed switching use MAXIMUM RATINGS (Tc = 25 °C) Symbol VDSS VGSS ID IDM IDA PD Tch Tstg Viso — Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight AC for 1minute, Terminal to case Typical value L = 200µH VGS = 0V VDS = 0V Conditions Ratings 250 ± 20 3 9 3 25 –55 ~ +150 –55 ~ +150 2000 2.0 Unit V V A A A W °C °C V g Jan. 2000 4.5 ± 0.2 MITSUBISHI Nch POWER MOSFET IMIN PREL . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY FS3KMA-5A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs  Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance IS = 1.5A, V GS = 0V Channel to case VDD = 150V, ID = 1.5A, VGS = 10V, RGEN = RGS = 50Ω ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 250V, VGS = 0V ID = 1mA, VDS = 10V ID = 1.5A, VGS = 10V ID = 1.5A, VGS = 10V ID = 1.5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Test conditions Limits Min. 250 — — 2.0 — — — — — — — — — — — — Typ. — — — 3.0 1.5 2.25 2.5 300 35 8 15 10 45 20 1.5 — Max. — ±0.1 1 4.0 2.0 3.0 — — — — — — — — 2.0 5.0 Unit V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 7 5 3 2 40 101 30 7 5 3 2 tw = 10µs 100µs 1ms TC = 25°C Single Pulse 23 5 7 101 23 5 7 102 10ms DC 23 5 20 100 7 5 3 2 10 0 10–1 0 50 100 150 200 7 CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 5 VGS = 20V TC = 25°C Pulse Test DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 2.0 VGS = 20V 10V 6V 5V 8V TC = 25°C Pulse Test DRAIN CURRENT ID (A) 4 DRAIN CURRENT ID (A) 10V 1.6 3 8V 6V 5V PD = 25W 1.2 2 0.8 1 4V 0.4 4V 0 0 4 8 12 16 20 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Jan. 2000 MITSUBISHI Nch POWER MOSFET e. tion. cifica t to chang c al spe t a fins are subje is no limit is e: Th tric Notice parame Som P MIN RELI ARY FS3KMA-5A HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 5.0 TC = 25°C Pulse Test ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 20 TC = 25°C Pulse Test DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) 16 ID = 6A 4.0 12 3.0 8 3A 1A 2.0 VGS = 10V 4 1.0 20V 0 0 4 8 12 16 20 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 10 102 7 5 3 2 FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) 8 101 7 5 3 2 6 25°C 4 100 7 5 3 2 75°C TC = 125°C 2 0 TC = 25°C VDS = 10V Pulse Test 0 4 8 12 16 20 10–1 VDS = 10V Pulse Test 2 3 5 7 100 2 3 5 7 101 10–1 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 103 7 5 3 2 Ciss 5 3 SWITCHING CHARACTERISTICS (TYPICAL) TCh = 25°C VDD = 150V VGS = 10V RGEN = RGS = 50Ω 102 7 5 3 2 Coss SWITCHING TIME (ns) 2 CAPACITANCE Ciss, Coss, Crss (pF) 102 7 5 3 2 td(on) tf td(off) 101 7 5 3 2 TCh = 25°C f = 1MHZ VGS = 0V 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 Crss 100 101 7 5 tr 2 3 5 7 100 2 3 5 7 101 10–1 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Jan. 2000 MITSUBISHI Nch POWER MOSFET IMIN PREL . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY FS3KMA-5A HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 5.0 VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) 20 TCh = 25°C ID = 3A SOURCE CURRENT IS (A) 16 VDS = 50V 4.0 12 100V 200V 3.0 TC = 25°C 75°C 125°C 8 2.0 4 1.0 0 0 2 4 6 8 10 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 VGS = 10V 7 ID = 1/2ID 5 Pulse Test 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VDS = 10V ID = 1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 0 50 100 150 4.0 3.0 100 7 5 3 2 2.0 1.0 10–1 –50 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 1.2 101 7 D = 1.0 5 3 0.5 2 0.2 0.1 1.0 0.05 0.8 100 7 5 3 2 0.01 0.02 Single Pulse PDM tw T D= tw T 0.6 0.4 –50 0 50 100 150 10–1 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Jan. 2000 CHANNEL TEMPERATURE Tch (°C)