MITSUBISHI Nch POWER MOSFET
FS3UM-10
HIGH-SPEED SWITCHING USE
FS3UM-10
OUTLINE DRAWING
10.5MAX. r
3.2 7.0
Dimensions in mm
4.5 1.3
16
φ 3.6
3.8MAX.
1.0
12.5MIN.
0.8
2.54
2.54
4.5MAX.
0.5
2.6
qwe
wr q GATE w DRAIN e SOURCE r DRAIN e
q
¡VDSS ................................................................................ 500V ¡rDS (ON) (MAX) ................................................................. 4.4Ω ¡ID ............................................................................................ 3A
TO-220
APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM PD Tch Tstg —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V
Conditions
Ratings 500 ±30 3 9 60 –55 ~ +150 –55 ~ +150 2.0
Unit V V A A W °C °C g
Feb.1999
Typical value
MITSUBISHI Nch POWER MOSFET
FS3UM-10
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 500V, VGS = 0V ID = 1mA, VDS = 10V ID = 1A, VGS = 10V ID = 1A, VGS = 10V ID = 1A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 500 ±30 — — 2 — — 1.0 — — — — — — — — — Typ. — — — — 3 3.4 3.4 1.5 300 35 6 13 10 30 30 1.5 — Max. — — ±10 1 4 4.4 4.4 — — — — — — — — 2.0 2.08
Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 200V, ID = 1A, VGS = 10V, RGEN = RGS = 50Ω
IS = 1A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 100 POWER DISSIPATION PD (W) MAXIMUM SAFE OPERATING AREA 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 TC = 25°C Single Pulse 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 5 TC = 25°C Pulse Test VGS = 20V 10V 8V 6V PD = 60W tw=10µs
80
DRAIN CURRENT ID (A)
100µs 1ms 10ms DC
60
40
20
0
0
50
100
150
200
10–2
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 10 PD = 60W TC = 25°C Pulse Test DRAIN CURRENT ID (A) VGS = 20V 10V 8V
DRAIN CURRENT ID (A)
8
4
6
3
4
6V 5V
2 5V
2
1
0
0
10
20
30
40
50
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS3UM-10
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω)
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 10 TC = 25°C Pulse Test 8
TC = 25°C Pulse Test 32
VGS = 10V
24 ID = 4A 16 3A 2A 1A 0 0 4 8 12 16 20
6 20V 4
8
2 0 10–2 2 3 5 7 10–1 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 10 TC = 25°C VDS = 50V Pulse Test 101 7 5
FORWARD TRANSFER ADMITTANCE yfs (S)
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS = 10V Pulse Test
DRAIN CURRENT ID (A)
8
6
3 2 100 7 5 3 2 10–1 –1 10 23
TC = 25°C
4
75°C 125°C
2
0
0
4
8
12
16
20
5 7 100
23
5 7 101
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 7 5 3 2 102 7 5 3 2 Coss 5 Ciss
SWITCHING TIME (ns)
SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω
3 2 102 7 5 3 2
tf
CAPACITANCE Ciss, Coss, Crss (pF)
td(off)
101 7 Tch = 25°C Crss 5 f = 1MHz 3 VGS = 0V 2 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V)
td(on)
101 tr 7 5 10–1 2 3
5 7 100
23
5 7 101
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS3UM-10
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 20 10 SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) TC = 125°C VGS = 0V Pulse Test 25°C 6 75°C
GATE-SOURCE VOLTAGE VGS (V)
16
SOURCE CURRENT IS (A)
20
Tch = 25°C ID = 3A VDS = 100V 200V 12 400V 8
8
4
4
2
0
0
4
8
12
16
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10–1 –50 0 50 100 150 5.0 VGS = 10V ID = 1/2ID Pulse Test
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 4.0
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
3.0
2.0
1.0
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (25°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (t°C)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 D=1 2 0.5 100 7 0.2 5 3 2 10–1 7 5 3 2
0.1
1.0
0.8
0.05 0.02 0.01 Single Pulse
PDM
tw T D= tw T
0.6
0.4
–50
0
50
100
150
10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s)
Feb.1999
CHANNEL TEMPERATURE Tch (°C)
很抱歉,暂时无法提供与“FS3UM”相匹配的价格&库存,您可以联系我们找货
免费人工找货