FS50AS-03

MITSUBISHI Nch POWER MOSFET FS50AS-03 HIGH-SPEED SWITCHING USE FS50AS-03 OUTLINE DRAWING 6.5 5.0 ± 0.2 Dimensions in mm r 5.5 ± 0.2 1.5 ± 0.2 0.5 ± 0.1 1.0MAX. 2.3MIN. 10MAX. 1.0 A 0.5 ± 0.2 0.8 0.9MAX. 2.3 2.3 2.3 q w e wr q GATE w DRAIN e SOURCE r DRAIN e ¡10V DRIVE ¡VDSS .................................................................................. 30V ¡rDS (ON) (MAX) .............................................................. 23m Ω ¡ID ......................................................................................... 50A ¡Integrated Fast Recovery Diode (TYP.) ............. 60ns q MP-3 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 30 ±20 50 200 50 50 200 35 –55 ~ +150 –55 ~ +150 0.26 Unit V V A A A A A W °C °C g Feb.1999 L = 30µH MITSUBISHI Nch POWER MOSFET FS50AS-03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage (Tch = 25° C) Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 10V ID = 25A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 30 — — 2.0 — — — — — — — Typ. — — — 3.0 17 0.425 23 1300 500 240 25 120 55 68 1.0 — 60 Max. — ±0.1 0.1 4.0 23 0.575 — — — — — — — — 1.5 3.57 — Unit V µA mA V mΩ V S pF pF pF ns ns ns ns V °C/W ns Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 15V, ID = 25A, VGS = 10V, RGEN = RGS = 50Ω — — — — — — IS = 25A, VGS = 0V Channel to case IS = 25A, dis/dt = –50A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 3 2 102 7 5 3 2 101 7 5 3 2 tw = 10ms 40 30 100ms 1ms 10ms 20 10 0 0 50 100 150 200 DC 100 7 TC = 25°C 5 Single Pulse 3 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 50 VGS = 20V 10V 8V TC = 25°C Pulse Test DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 20 VGS = 20V 10V 7V 6V TC = 25°C Pulse Test DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 40 16 30 6V 12 5V 20 PD = 35W 5V 8 10 4 4V 0 0 0.4 0.8 1.2 1.6 2.0 0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS50AS-03 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 5.0 TC = 25°C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 50 TC = 25°C Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 4.0 40 3.0 30 VGS = 10V 2.0 ID = 80A 20 20V 1.0 50A 30A 10 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN CURRENT ID (A) 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 100 TC = 25°C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 VDS = 10V 7 Pulse Test 5 4 3 2 101 7 5 4 3 2 DRAIN CURRENT ID (A) 60 40 FORWARD TRANSFER ADMITTANCE yfs (S) 80 20 TC = 25°C 75°C 125°C 0 0 4 8 12 16 20 100 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 104 Tch = 25°C f = 1MHZ 7 VGS = 0V SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 4 3 2 102 7 5 4 3 2 Tch = 25°C VDD = 15V VGS = 10V RGEN = RGS = 50Ω tr tf td(off) td(on) Ciss Coss 103 7 5 3 2 102 7 5 3 2 Crss SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 5 3 2 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS50AS-03 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 100 VDS = 0V Pulse Test GATE-SOURCE VOLTAGE VGS (V) 20 Tch = 25°C ID = 50A 16 VDS = 10V SOURCE CURRENT IS (A) 75 12 20V 25V 50 TC = 125°C 8 4 25 75°C 25°C 0 0 10 20 30 40 50 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 5.0 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 4.0 3.0 2.0 1.0 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D = 1.0 3 0.5 2 100 7 0.1 5 3 2 10–1 7 5 3 2 0.2 1.2 1.0 0.8 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 0.6 0.4 –50 0 50 100 150 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s) Feb.1999 CHANNEL TEMPERATURE Tch (°C)