MITSUBISHI Nch POWER MOSFET
FS50KM-2
HIGH-SPEED SWITCHING USE
FS50KM-2
OUTLINE DRAWING
10 ± 0.3
6.5 ± 0.3 3 ± 0.3
Dimensions in mm
2.8 ± 0.2
15 ± 0.3
f 3.2 ± 0.2
14 ± 0.5
3.6 ± 0.3
1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15
E
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25
4.5 ± 0.2
123
2.6 ± 0.2
¡10V DRIVE ¡VDSS ............................................................................... 100V ¡rDS (ON) (MAX) .............................................................. 55mΩ ¡ID ......................................................................................... 50A ¡Integrated Fast Recovery Diode (TYP.) .......... 105ns ¡Viso ................................................................................ 2000V
w
q
q GATE w DRAIN e SOURCE
e
TO-220FN
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg Viso —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight L = 50µH VGS = 0V VDS = 0V
Conditions
Ratings 100 ±20 50 200 50 50 200 30 –55 ~ +150
Unit V V A A A A A W °C °C V g
Feb.1999
AC for 1minute, Terminal to case Typical value
–55 ~ +150 2000 2.0
MITSUBISHI Nch POWER MOSFET
FS50KM-2
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
(Tch = 25° C)
Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 100V, V GS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 10V ID = 25A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 100 — — 2.0 — — — — — — — Typ. — — — 3.0 39 0.98 33 2300 410 185 35 86 100 80 1.0 — 105 Max. — ±0.1 0.1 4.0 55 1.38 — — — — — — — — 1.5 4.17 —
Unit V µA mA V mΩ V S pF pF pF ns ns ns ns V °C/W ns
Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 50V, ID = 25A, VGS = 10V, RGEN = RGS = 50Ω
— — — — — —
IS = 25A, VGS = 0V Channel to case IS = 50A, dis/dt = –100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50 MAXIMUM SAFE OPERATING AREA 3 2
POWER DISSIPATION PD (W)
40
30
DRAIN CURRENT ID (A)
102 7 5 3 2 101 7 5 3 2
tw = 10ms
100ms
20
1ms 10ms
10
0
0
50
100
150
200
100 100ms 7 TC = 25°C DC 5 Single Pulse 3 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 50
VGS = 20V 10V 7V 6V TC = 25°C Pulse Test
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 100
VGS = 20V 10V 7V
DRAIN CURRENT ID (A)
80
DRAIN CURRENT ID (A)
40
60
6V
30
40
TC = 25°C Pulse Test 5V PD = 30W
20
5V
20
10
PD = 30W
0
0
2
4
6
8
10
0
0
1
2
3
4
5
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50KM-2
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 5
TC = 25°C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 100
TC = 25°C Pulse Test
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ)
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
4
80
3
ID = 80A
60
VGS = 10V
2
50A
40
20V
1
20A
20 0
0
0
4
8
12
16
20
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 100
TC = 25°C VDS = 10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 VDS = 10V 7 Pulse Test 5 4 3 2 101 7 5 4 3 2
DRAIN CURRENT ID (A)
60
40
FORWARD TRANSFER ADMITTANCE yfs (S)
80
20
TC = 25°C 75°C 125°C
0
0
4
8
12
16
20
100 0 10
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL)
Tch = 25°C 104 VGS = 0V 7 f = 1MHZ Ciss
SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 4 3 2
td(off) Tch = 25°C VDD = 50V VGS = 10V RGEN = RGS = 50Ω
2
103 7 5 3 2 102 7 5 3 2
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
5 3 2
Coss Crss
102 7 5 4 3 2
tf tr td(on)
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
101 0 10
2 3 4 5 7 101
2 3 4 5 7 102
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50KM-2
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 100
Tch = 25°C ID = 50A VGS = 0V Pulse Test
GATE-SOURCE VOLTAGE VGS (V)
20
16
VDS = 20V
SOURCE CURRENT IS (A)
80
12
60
TC = 125°C
8
50V 80V
40
75°C 25°C
4
20
0
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 5.0
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL)
VDS = 10V ID = 1mA
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
4.0
3.0
2.0
1.0
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 D = 1.0 5 3 0.5 2 100 0.2 7 0.1 PDM 5 3 tw 2 0.05 T 0.02 10–1 7 0.01 D= tw 5 T Single Pulse 3 2 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s)
Feb.1999
1.2
1.0
0.8
0.6
0.4
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
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