FS50KMJ-06

MITSUBISHI Nch POWER MOSFET FS50KMJ-06 HIGH-SPEED SWITCHING USE FS50KMJ-06 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 f 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 E 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 123 2.6 ± 0.2 ¡4V DRIVE ¡VDSS ................................................................................. 60V ¡rDS (ON) (MAX) ............................................................. 20mΩ ¡ID ........................................................................................ 50A ¡Integrated Fast Recovery Diode (TYP.) ............ 70ns ¡Viso ............................................................................... 2000V w q q GATE w DRAIN e SOURCE e TO-220FN APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg Viso — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight L = 100µH VGS = 0V VDS = 0V Conditions Ratings 60 ±20 50 200 50 50 200 30 –55 ~ +150 Unit V V A A A A A W °C °C V g Feb.1999 AC for 1minute, Terminal to case Typical value –55 ~ +150 2000 2.0 MITSUBISHI Nch POWER MOSFET FS50KMJ-06 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage (Tch = 25° C) Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 4V ID = 25A, VGS = 10V ID = 25A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 60 — — 1.0 — — — — — — — — — — — — — — Typ. — — — 1.5 15 18 0.38 41 3000 580 300 22 65 250 160 1.0 — 70 Max. — ±0.1 0.1 2.0 20 24 0.50 — — — — — — — — 1.5 4.17 — Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 30V, I D = 25A, VGS = 10V, RGEN = RGS = 50Ω IS = 25A, VGS = 0V Channel to case IS = 50A, dis/dt = –100A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 3 2 102 7 5 3 2 101 7 5 3 2 1ms 10ms 100ms TC = 25°C Single Pulse DC tw = 10ms 40 30 100ms 20 10 0 0 50 100 150 200 100 7 5 3 3 5 7100 23 5 7 101 2 3 5 7 102 2 3 CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 100 VGS = 10V 5V TC = 25°C Pulse Test DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 50 VGS = 10V 5V 4V TC = 25°C Pulse Test 3.5V DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 80 4V 40 60 30 3V 40 3V 20 PD = 30W 20 PD = 30W 10 2.5V 0 0 1 2 3 4 5 0 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS50KMJ-06 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) TC = 25°C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 50 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) TC = 25°C Pulse Test 1.6 40 VGS = 4V 1.2 ID = 80A 30 0.8 50A 20 10V 0.4 20A 10 0 0 0 2 4 6 8 10 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 100 TC = 25°C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 VDS = 10V 7 Pulse Test 5 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) TC = 25°C 80 3 2 101 7 5 3 2 75°C 125°C 60 40 20 0 0 2 4 6 8 10 100 0 10 23 5 7 101 2 3 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 103 SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 Tch = 25°C VDD = 30V VGS = 10V RGEN = RGS = 50Ω 7 5 3 2 Ciss 3 2 td(off) 103 7 5 3 2 102 7 5 3 2 tf Coss Crss 102 7 5 3 2 101 0 10 tr td(on) Tch = 25°C f = 1MHZ VGS = 0V 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) 23 5 7 101 23 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS50KMJ-06 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 100 SOURCE CURRENT IS (A) VGS = 0V Pulse Test TC = 125°C 10 Tch = 25°C ID = 50A 8 VDS = 10V 20V 40V 80 6 60 75°C 25°C 4 40 2 20 0 0 20 40 60 80 100 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 4.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 3.2 2.4 1.6 0.8 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 5 D = 1.0 3 0.5 2 100 0.2 7 0.1 PDM 5 3 0.05 tw 2 T 0.02 10–1 7 D= tw 0.01 5 T 3 Single Pulse 2 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s) Feb.1999 1.2 1.0 0.8 0.6 0.4 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C)