MITSUBISHI Nch POWER MOSFET
FS50SM-3
HIGH-SPEED SWITCHING USE
FS50SM-3
OUTLINE DRAWING
15.9MAX.
Dimensions in mm
4.5 1.5 r
5.0
f 3.2
2
2
4
20.0
19.5MIN.
4.4
G
0.6 2.8
1.0 q 5.45 w e 5.45
4 wr
¡10V DRIVE ¡VDSS ................................................................................ 150V ¡rDS (ON) (MAX) .............................................................. 31m Ω ¡ID ......................................................................................... 50A ¡Integrated Fast Recovery Diode (TYP.) .........130ns
q
q GATE w DRAIN e SOURCE r DRAIN e
TO-3P
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 150 ±20 50 200 50 50 200 150 –55 ~ +150 –55 ~ +150 4.8
Unit V V A A A A A W °C °C g
Feb.1999
L = 100µH
MITSUBISHI Nch POWER MOSFET
FS50SM-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
(Tch = 25° C)
Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 150V, V GS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 10V ID = 25A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 150 — — 2.0 — — — — — — — Typ. — — — 3.0 24 0.600 55 6540 860 360 95 155 380 180 1.0 — 130 Max. — ±0.1 0.1 4.0 31 0.775 — — — — — — — — 1.5 0.83 —
Unit V µA mA V mΩ V S pF pF pF ns ns ns ns V °C/W ns
Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 80V, ID = 25A, VGS = 10V, RGEN = RGS = 50Ω
— — — — — —
IS = 25A, VGS = 0V Channel to case IS = 50A, dis/dt = –100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 200 MAXIMUM SAFE OPERATING AREA 3 2
POWER DISSIPATION PD (W)
160
DRAIN CURRENT ID (A)
120
102 7 5 3 2 101 7 5 3 2
tw = 10ms 100ms 1ms 10ms
80
40
100
0
0
50
100
150
200
DC 7 TC = 25°C 5 Single Pulse 30 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 100
VGS = 20V 10V 8V TC = 25°C Pulse Test 7V 6V
DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 50
VGS = 20V 10V 7V 6V TC = 25°C Pulse Test
DRAIN CURRENT ID (A)
80
DRAIN CURRENT ID (A)
40
5V
60
30
40
5V PD = 150W
20
20
10
4V
0
0
1.0
2.0
3.0
4.0
5.0
0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50SM-3
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0 40
ID = 100A
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL)
TC = 25°C Pulse Test
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ)
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
1.6
80A
32
1.2
50A
24
VGS = 10V 20V
0.8
16
0.4
TC = 25°C Pulse Test
20A
8 0
0
0
4
8
12
16
20
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 100
TC = 25°C VDS = 10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 VDS = 10V 7 Pulse Test 5 4 3 2 101 7 5 4 3 2
TC = 25°C 75°C 125°C
DRAIN CURRENT ID (A)
60
40
20
FORWARD TRANSFER ADMITTANCE yfs (S)
80
0
0
4
8
12
16
20
100 0 10
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 104 7 5 3 2
Ciss
SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10
td(off)
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
tf tr td(on)
103 7 5 3 2
Coss Crss
102 7 Tch = 25°C 5 f = 1MHZ 3 VGS = 0V 2 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
Tch = 25°C VDD = 80V VGS = 10V RGEN = RGS = 50Ω
2 3 4 5 7 101
2 3 4 5 7 102
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50SM-3
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 100
Tch = 25°C ID = 50A VGS = 0V Pulse Test TC = 125°C
GATE-SOURCE VOLTAGE VGS (V)
20
16
VDS = 50V
SOURCE CURRENT IS (A)
80
12
80V 100V
60
75°C 25°C
8
40
4
20
0
0
40
80
120
160
200
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 5.0
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL)
VDS = 10V ID = 1mA
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
4.0
3.0
2.0
1.0
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 D = 1.0 7 5 0.5 3 0.2 2
0.1
1.2
1.0
0.8
PDM
tw
10–1 7 5 3 2
0.05 0.02 0.01 Single Pulse
T D= tw T
0.6
0.4
–50
0
50
100
150
10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s)
Feb.1999
CHANNEL TEMPERATURE Tch (°C)
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