MITSUBISHI Nch POWER MOSFET
FS5AS-06
HIGH-SPEED SWITCHING USE
FS5AS-06
OUTLINE DRAWING
1.5 ± 0.2
Dimensions in mm
0.5 ± 0.1
6.5 5.0 ± 0.2
r
5.5 ± 0.2 1.0MAX. 2.3MIN.
10MAX.
1.0
A
0.5 ± 0.2 0.8
0.9MAX.
2.3
2.3
2.3
q
w
e
wr q GATE w DRAIN e SOURCE r DRAIN e
¡10V DRIVE ¡VDSS .................................................................................. 60V ¡rDS (ON) (MAX) .............................................................. 0.16 Ω ¡ID ............................................................................................ 5A ¡Integrated Fast Recovery Diode (TYP.) ............. 45ns
q
MP-3
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 60 ±20 5 20 5 5 20 20 –55 ~ +150 –55 ~ +150 0.26
Unit V V A A A A A W °C °C g
Feb.1999
L = 100µH
MITSUBISHI Nch POWER MOSFET
FS5AS-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
(Tch = 25° C)
Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 2A, VGS = 10V ID = 2A, VGS = 10V ID = 2A, VDS = 5V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 60 — — 2.0 — — — — — — — Typ. — — — 3.0 0.12 0.24 4.0 280 120 35 15 8 18 9 1.0 — 45 Max. — ±0.1 0.1 4.0 0.16 0.32 — — — — — — — — 1.5 6.25 —
Unit V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W ns
Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 30V, ID = 2A, VGS = 10V, RGEN = RGS = 50Ω
— — — — — —
IS = 2A, VGS = 0V Channel to case IS = 5A, dis/dt = –100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 40
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA 2 101 7 5 3 2 100 7 5 3 2
tw = 10ms
32
100ms 1ms DC 10ms
24
16
8
0
0
50
100
150
200
10–1 7 5 TC = 25°C 3 Single Pulse 2 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 10
VGS = 20V 10V 8V 7V Tc = 25°C Pulse Test 6V
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 20
VGS = 20V 10V 8V
DRAIN CURRENT ID (A)
16
DRAIN CURRENT ID (A)
PD = 20W 7V
8
12
Tc = 25°C Pulse Test
6
8
6V
4
5V
4
5V
2
0
0
1.0
2.0
3.0
4.0
5.0
0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS5AS-06
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 5.0
Tc = 25°C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 200
Tc = 25°C Pulse Test VGS = 10V
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ)
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
4.0
160
3.0
120
20V
2.0
ID = 8A 5A 2A
80
1.0
40 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 10
Tc = 25°C VDS = 10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 7 5 4 3 2 100 7 5 4 3 2
TC = 25°C 75°C 125°C VDS = 5V Pulse Test
DRAIN CURRENT ID (A)
6
4
2
FORWARD TRANSFER ADMITTANCE yfs (S)
8
0
0
4
8
12
16
20
10–1 0 10
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2
Tch = 25°C
SWITCHING CHARACTERISTICS (TYPICAL) 2 102
Tch = 25°C VDD = 30V VGS = 10V RGEN = RGS = 50Ω tf
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
104 f = 1MHZ 7 VGS = 0V 5 3 2 103 7 5 3 2 102 7 5 3 2
7 5 4 3 2 101 7 5 4 3 2 10–1
td(off) td(on)
Ciss
tr
Coss Crss
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
2 3 4 5 7 100
2 3 4 5 7 101
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS5AS-06
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 20
VGS = 0V Pulse Test
GATE-SOURCE VOLTAGE VGS (V)
20
Tch = 25°C ID = 5A
16
SOURCE CURRENT IS (A)
16
12
VDS = 10V
12
8
20V 40V
8
TC = 125°C 75°C 25°C
4
4
0
0
4
8
12
16
20
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 5.0
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL)
VDS = 10V ID = 1mA
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
4.0
3.0
2.0
1.0
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2
D = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse PDM
tw T D= tw T
1.2
1.0
0.8
0.6
0.4
–50
0
50
100
150
10–1 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s)
Feb.1999
CHANNEL TEMPERATURE Tch (°C)
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