FS5KMH-2

MITSUBISHI Nch POWER MOSFET FS5KMH-2 HIGH-SPEED SWITCHING USE FS5KMH-2 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 f 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 E 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 123 2.6 ± 0.2 w ¡2.5V DRIVE ¡VDSS ............................................................................... 100V ¡rDS (ON) (MAX) ............................................................. 0.44Ω ¡ID ........................................................................................... 5A ¡Integrated Fast Recovery Diode (TYP.) ............. 80ns ¡Viso ................................................................................ 2000V q q GATE w DRAIN e SOURCE e TO-220FN APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight L = 100µH VGS = 0V VDS = 0V Conditions Ratings 100 ±10 5 20 5 5 20 15 –55 ~ +150 Unit V V A A A A A W °C °C V g Feb.1999 AC for 1minute, Terminal to case Typical value –55 ~ +150 2000 2.0 MITSUBISHI Nch POWER MOSFET FS5KMH-2 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage (Tch = 25° C) Test conditions ID = 1mA, VGS = 0V VGS = ±10V, VDS = 0V VDS = 100V, V GS = 0V ID = 1mA, V DS = 10V ID = 2A, V GS = 4V ID = 2A, V GS = 2.5V ID = 2A, V GS = 4V ID = 2A, V DS = 5V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 100 — — 0.6 — — — — — — — — — — — — — — Typ. — — — 0.9 0.32 0.34 0.64 10 540 75 20 12 18 45 26 1.0 — 80 Max. — ±0.1 0.1 1.2 0.44 0.47 0.88 — — — — — — — — 1.5 8.33 — Unit V µA mA V Ω Ω V S pF pF pF ns ns ns ns V °C/W ns Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 50V, I D = 2A, V GS = 4V, RGEN = RGS = 50Ω IS = 2A, VGS = 0V Channel to case IS = 5A, dis/dt = –100A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 20 MAXIMUM SAFE OPERATING AREA 5 3 2 POWER DISSIPATION PD (W) tw = 10ms 16 DRAIN CURRENT ID (A) 12 101 7 5 3 2 100 7 5 3 2 10–1 100ms 1ms 10ms DC 8 4 0 0 50 100 150 200 7 5 TC = 25°C 3 Single Pulse 2 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 10 VGS = 5V 4V 3V Tc = 25°C Pulse Test PD = 15W 5.0 VGS = 5V 4V 3V 2.5V Tc = 25°C Pulse Test 2V 2.5V DRAIN CURRENT ID (A) 8 2V DRAIN CURRENT ID (A) 4.0 6 3.0 4 2.0 1.5V 2 1.5V 1.0 0 0 1.0 2.0 3.0 4.0 5.0 0 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS5KMH-2 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 5.0 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) Tch = 25°C Tc = 25°C Pulse Test Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 1.0 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) Tc = 25°C Pulse Test 4.0 ID = 8A 0.8 3.0 0.6 VGS = 2.5V 4V 2.0 5A 0.4 1.0 2A 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 0 1.0 2.0 3.0 4.0 5.0 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 10 Tc = 25°C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) VDS = 5V Pulse Test DRAIN CURRENT ID (A) 8 3 2 TC = 25°C 75°C 125°C 101 7 5 3 2 6 4 2 0 0 1.0 2.0 3.0 4.0 5.0 100 0 10 23 5 7 101 23 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 103 SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 -1 10 2 3 4 5 7 100 td(off) tf tr td(on) 7 5 3 2 7 5 3 2 Ciss 102 Coss Crss 101 7 Tch = 25°C 5 f = 1MHZ 3 VGS = 0V 2 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) Tch = 25°C VDD = 50V VGS = 4V RGEN = RGS = 50Ω 2 3 4 5 7 101 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS5KMH-2 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 20 VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VGS (V) 5.0 4.0 VDS = 20V SOURCE CURRENT IS (A) Tch = 25°C ID = 5A 16 TC = 125°C 3.0 50V 80V 12 75°C 25°C 2.0 8 1.0 4 0 0 2 4 6 8 10 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 4V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 2.0 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 1.6 1.2 0.8 0.4 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 D = 1.0 7 0.5 5 3 0.2 2 100 7 5 3 2 0.1 0.05 0.02 0.01 Single Pulse 1.2 1.0 0.8 PDM tw T D= tw T 0.6 0.4 –50 0 50 100 150 10–1 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s) Feb.1999 CHANNEL TEMPERATURE Tch (°C)