FX30ASJ-03

P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX30ASJ-03 HIGH-SPEED SWITCHING USE FX30ASJ-03 OUTLINE DRAWING 6.5 5.0 ± 0.2 4 Dimensions in mm 5.5 ± 0.2 1.5 ± 0.2 0.5 ± 0.1 1.0 max 2.3 min 10 max 1.0 A 0.5 ± 0.2 0.8 0.9 max 2.3 2.3 2.3 1 2 3 3 • 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 61mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) ...........50ns APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. 1 1 2 3 4 24 GATE DRAIN SOURCE DRAIN MP-3 MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage VGS = 0V VDS = 0V Conditions Ratings –30 ±20 –30 –120 –30 –30 –120 35 –55 ~ +150 –55 ~ +150 Unit V V A A A A A W °C °C g Jan.1999 Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) L = 10µH Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value 0.26 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX30ASJ-03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25°C) Test conditions ID = –1mA, VDS = 0V VGS = ±20V, VDS = 0V VDS = –30V, VGS = 0V ID = –1mA, VDS = –10V ID = –15A, VGS = –10V ID = –5A, VGS = –4V ID = –15A, VGS = –10V ID = –15A, VDS = –10V VDS = –10V, VGS = 0V, f = 1MHz Limits Min. –30 — — –1.3 — — — — — — — — — — — — — — Typ. — — — –1.8 48 96 –0.72 11.9 2460 410 170 20 84 123 60 –1.0 — 50 Max. — ±0.1 –0.1 –2.3 61 120 –0.92 — — — — — — — — –1.5 3.57 — Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = –15V, ID = –15A, VGS = –10V, RGEN = RGS = 50Ω IS = –15A, VGS = 0V Channel to case IS = –15A, dis/dt = 50A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA –2 –102 40 –7 –5 –3 –2 tw = 10µs 100µs 1ms 10ms DC TC = 25°C Single Pulse 30 –101 –7 –5 –3 –2 20 10 –100 –7 –5 0 0 50 100 150 200 –3 –2 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) –50 VGS = –10V OUTPUT CHARACTERISTICS (TYPICAL) –20 VGS = –10V –8V –6V –5V PD = 35W –4V –7V –8V –6V DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) –40 –5V –16 –30 –12 –20 –4V Tc = 25°C Pulse Test PD = 35W –3V –8 Tc = 25°C Pulse Test –3V –10 –4 0 0 –1.0 –2.0 –3.0 –4.0 –5.0 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX30ASJ-03 HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 200 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) Tc = 25°C Pulse Test ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) –5.0 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) Tc = 25°C Pulse Test –4.0 160 –3.0 ID = –50A 120 VGS = –4V –2.0 –30A 80 –10V –1.0 –15A 40 0 –10–1 –2 –3 –5 –7–100 –2 –3 –5–7 –101 –2 –3 –5 –7–102 DRAIN CURRENT ID (A) 0 0 –2 –4 –6 –8 –10 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) –50 DRAIN CURRENT ID (A) Tc = 25°C VDS = –10V Pulse Test 2 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS = –10V Pulse Test FORWARD TRANSFER ADMITTANCE yfs (S) –40 102 7 5 4 3 2 –30 75°C 125°C TC = 25°C –20 101 7 5 4 3 –10 0 0 –2 –4 –6 –8 –10 –100 2 –2 –3 –5 –7 –101 –2 –3 –5 –7 –102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 Tch = 25°C SWITCHING CHARACTERISTICS (TYPICAL) 103 Tch = 25°C 7 VGS = –10V 5 VDD = –15V 4 RGEN = RGS = 50Ω 3 2 td(off) 104 f = 1MHZ 3 2 Ciss 103 7 5 3 2 Coss Crss SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 7 VGS = 0V 5 102 7 5 4 3 2 tf tr td(on) 102 7 5 3 2 –3 –5–7–100 –2 –3 –5–7 –101 –2 3 –5–7 –102 –2 –3 101 –5 –7 –100 –2 –3 –5 –7–101 –2 –3 –5 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX30ASJ-03 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) –10 Tch = 25°C ID = –30A SOURCE CURRENT IS (A) –8 –40 –6 –30 –4 VDS = –10V –20V –25V –20 TC = 25°C 75°C 125°C –2 –10 0 0 10 20 30 40 50 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 –4.0 7 5 4 3 2 VGS = –10V ID = 1/2ID Pulse Test THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = –10V ID = –1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 50 100 150 –3.2 –2.4 100 7 5 4 3 2 –1.6 –0.8 10–1 –50 0 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = –1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D=1 3 0.5 2 0.2 7 0.1 5 3 2 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 1.2 100 1.0 0.8 10–1 7 5 3 2 0.6 0.4 –50 0 50 100 150 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Jan.1999 CHANNEL TEMPERATURE Tch (°C)