FX30SMJ-3

P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX30SMJ-3 HIGH-SPEED SWITCHING USE FX30SMJ-3 OUTLINE DRAWING 15.9 max Dimensions in mm 4.5 1.5 4 2 2 19.5 min 4 20.0 φ 3.2 5.0 4.4 G 0.6 2.8 1.0 1 2 3 5.45 5.45 4 3 • 4V DRIVE • VDSS ............................................................. –150V • rDS (ON) (MAX) .............................................. 100mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) .........100ns APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. 1 1 2 3 4 24 GATE DRAIN SOURCE DRAIN T0-3P MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage VGS = 0V VDS = 0V Conditions Ratings –150 ±20 –30 –120 –30 –30 –120 150 –55 ~ +150 –55 ~ +150 Unit V V A A A A A W °C °C g Jan.1999 Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) L = 30µH Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value 4.8 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX30SMJ-3 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25°C) Test conditions ID = –1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = –150V, VGS = 0V ID = –1mA, VDS = –10V ID = –15A, VGS = –10V ID = –15A, VGS = –4V ID = –15A, VGS = –10V ID = –15A, VDS = –10V VDS = –10V, VGS = 0V, f = 1MHz Limits Min. –150 — — –1.0 — — — — — — — — — — — — — — Typ. — — — –1.5 78 85 –1.17 41.3 11430 674 320 61 99 878 330 –1.0 — 100 Max. — ±0.1 –0.1 –2.0 100 111 –1.50 — — — — — — — — –1.5 0.83 — Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = –80V, ID = –15A, VGS = –10V, RGEN = RGS = 50Ω IS = –15A, VGS = 0V Channel to case IS = –30A, dis/dt = 100A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 200 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA –2 –102 160 –7 –5 –3 –2 tw = 10µs 100µs 120 –101 –7 –5 –3 –2 1ms 10ms DC 80 40 –100 –7 –5 0 0 50 100 150 200 TC = 25°C –3 Single Pulse –2 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 –3 –5–7–103 –2 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) –50 –6V –5V –4V TC = 25°C Pulse Test OUTPUT CHARACTERISTICS (TYPICAL) –20 VGS = –10V –6V –4V –3V TC = 25°C Pulse Test DRAIN CURRENT ID (A) –40 VGS = –10V DRAIN CURRENT ID (A) –16 –3.5V –30 –3V –12 –2.5V –20 PD = 150W –8 –10 –4 0 0 –2 –4 –6 –8 –10 0 0 –1.0 –2.0 –3.0 –4.0 –5.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX30SMJ-3 HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 200 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) TC = 25°C Pulse Test TC = 25°C Pulse Test ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) –10 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) –8 160 –6 120 VGS = –4V –4 ID = –45A –30A 80 –10V –2 –15A 40 0 0 –2 –4 –6 –8 –10 00 –10 –2 –3 –5 –7 –101 –2 –3 –5 –7 –102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) –50 TC = 25°C VDS = –10V Pulse Test FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 TC = 25°C 75°C 125°C DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) –40 3 2 –30 101 7 5 3 2 VDS = –10V Pulse Test –2 –3 –5 –7 –101 –2 –3 –5 –7 –20 –10 0 0 –2 –4 –6 –8 –10 100 –7 –100 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 105 7 TCh = 25°C 5 f = 1MHZ 3 VGS = 0V 2 7 5 3 2 2 SWITCHING CHARACTERISTICS (TYPICAL) 103 SWITCHING TIME (ns) Ciss 7 5 3 2 td(off) CAPACITANCE Ciss, Coss, Crss (pF) 104 tf 103 7 5 3 2 Coss Crss –2 –3 –5 –7 –101 –2 –3 –5 –7 –102 102 7 5 3 tr td(on) TCh = 25°C VDD = –80V VGS = –10V RGEN = RGS = 50Ω 102 0 –10 2 –7 –100 –2 –3 –5–7 –101 –2 –3 –5–7 –102 –2 –3 –5–7 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX30SMJ-3 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) –10 TCh = 25°C ID = –30A SOURCE CURRENT IS (A) –8 –40 TC = 125°C 75°C 25°C –6 VDS = –50V –80V –100V –30 –4 –20 –2 –10 0 0 40 80 120 160 200 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 VGS = –10V 7 ID = 1/2ID 5 Pulse Test 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) –4.0 VDS = –10V ID = –1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) –3.2 –2.4 100 7 5 3 2 –1.6 –0.8 10–1 –50 0 50 100 150 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = –1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 1.2 100 D = 1.0 7 5 0.5 3 0.2 2 0.1 PDM tw 1.0 0.8 10–1 7 5 3 2 0.05 0.02 0.01 Single Pulse T D= tw T 0.6 0.4 –50 0 50 100 150 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Jan.1999 CHANNEL TEMPERATURE Tch (°C)