P
ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som
IM REL
Y NAR I
MITSUBISHI Pch POWER MOSFET
FX3ASJ-3
HIGH-SPEED SWITCHING USE
FX3ASJ-3
OUTLINE DRAWING
6.5 5.0 ± 0.2
4
Dimensions in mm
5.5 ± 0.2
1.5 ± 0.2
0.5 ± 0.1
1.0 max
2.3 min
10 max
1.0
A
0.5 ± 0.2 0.8
0.9 max
2.3
2.3
2.3
1
2 3
3
• 4V DRIVE • VDSS ............................................................. –150V • rDS (ON) (MAX) .................................................. 1.2Ω • ID ...................................................................... –3A • Integrated Fast Recovery Diode (TYP.) ...........80ns
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
1
1 2 3 4 24
GATE DRAIN SOURCE DRAIN
MP-3
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage VGS = 0V VDS = 0V
Conditions
Ratings –150 ±20 –3 –12 –3 –3 –12 30 –55 ~ +150 –55 ~ +150
Unit V V A A A A A W °C °C g Jan.1999
Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) L = 100µH Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value
0.26
P
ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som
IM REL
Y NAR I
MITSUBISHI Pch POWER MOSFET
FX3ASJ-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter
(Tch = 25°C)
Test conditions ID = –1mA, VGS = 0V VGS = ± 20V, VDS = 0V VDS = –150V, VGS = 0V ID = –1mA, VDS = –10V ID = –1A, VGS = –10V ID = –1A, VGS = –4V ID = –1A, VGS = –10V ID = –1A, VDS = –5V VDS = –10V, VGS = 0V, f = 1MHz
Limits Min. –150 — — –1.0 — — — — — — — — — — — — — — Typ. — — — –1.5 0.93 1.02 –0.93 3.0 1170 81 31 9 7 82 33 –1.0 — 80 Max. — ±0.1 –0.1 –2.0 1.20 1.32 –1.20 — — — — — — — — –1.5 4.17 —
Unit V µA mA V Ω Ω V S pF pF pF ns ns ns ns V °C/W ns
Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = –80V, ID = –1A, VGS = –10V, RGEN = RGS = 50Ω
IS = –1A, VGS = 0V Channel to case IS = –3A, dis/dt = 100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA
–2
–101 40
–7 –5 –3 –2
tw = 10µs 100µs 1ms 10ms DC TC = 25°C Single Pulse
30
–100
–7 –5 –3 –2
20
10
–10–1
–7 –5 –3 –2 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 –3 –5–7–103 –2
0
0
50
100
150
200
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS (TYPICAL) –10
VGS = –10V –6V –5V –4V
OUTPUT CHARACTERISTICS (TYPICAL) –5.0
VGS = –10V –6V –4V Tc = 25°C Pulse Test –3V PD = 30W
DRAIN CURRENT ID (A)
–8
DRAIN CURRENT ID (A)
–4.0
–5V
–6
Tc = 25°C Pulse Test –3V
–3.0
–4
–2.0
–2.5V
–2
PD = 30W
–1.0
0
0
–4
–8
–12
–16
–20
0
0
–2
–4
–6
–8
–10
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V) Jan.1999
P
ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som
IM REL
Y NAR I
MITSUBISHI Pch POWER MOSFET
FX3ASJ-3
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 2.0 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω)
Tc = 25°C Pulse Test Tc = 25°C Pulse Test
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) –20 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
–16
1.6
VGS = –4V
–12
1.2
–10V
–8
ID = –6A
0.8
–4
–3A –1A
0.4
0
0
–2
–4
–6
–8
–10
0 –10–1 –2 –3
–5 –7 –100
–2 –3
–5 –7 –101
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
TRANSFER CHARACTERISTICS (TYPICAL) –10
Tc = 25°C VDS = –10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101
7 5 TC = 25°C 75°C 125°C
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE yfs (S)
–8
3 2
–6
100
7 5 3 2 VDS = –5V Pulse Test –2 –3 –5 –7 –100 –2 –3 –5 –7
–4
–2
0
0
–2
–4
–6
–8
–10
10–1
–7–10–1
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104
7 Tch = 25°C 5 f = 1MHZ 3 VGS = 0V 2 7 5 3 2
SWITCHING CHARACTERISTICS (TYPICAL) 103
7 5 3 2 Tch = 25°C VDD = –80V VGS = –10V RGEN = RGS = 50Ω td(off) tf td(on) tr
Ciss
103
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
102
7 5 3 2
102
7 5 3 2 Coss Crss –5 –7 –101 –5 –7 –102
101
7 5 3 2
101 0 –10
–2 –3
–2 –3
100 –1 –10 –2 –3
–5 –7 –100
–2 –3
–5 –7 –101
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A) Jan.1999
P
ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som
IM REL
Y NAR I
MITSUBISHI Pch POWER MOSFET
FX3ASJ-3
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –10
VGS = 0V Pulse Test
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
–10
Tch = 25°C ID = –3A
SOURCE CURRENT IS (A)
–8
–8
–6
VDS = –50V –80V –100V
–6
–4
–4
TC = 125°C 75°C 125°C
–2
–2
0
0
–4
–8
–12
–16
–20
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 –4.0
7 5 3 2 VGS = –10V ID = 1/2ID Pulse Test
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL)
VDS = –10V ID = –1mA
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
–3.2
–2.4
100
7 5 3 2
–1.6
–0.8
10–1
–50
0
50
100
150
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = –1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102
7 5 3 2
1.2
101
7 5 D = 1.0 3 0.5 2 0.2
1.0
0.8
PDM 0.1 0.05 0.02 0.01 Single Pulse
tw T D= tw T
100
7 5 3 2
0.6
0.4
–50
0
50
100
150
10–1 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Jan.1999
CHANNEL TEMPERATURE Tch (°C)
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