P
ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som
IM REL
Y NAR I
MITSUBISHI Pch POWER MOSFET
FX50KMJ-03
HIGH-SPEED SWITCHING USE
FX50KMJ-03
OUTLINE DRAWING
10 ± 0.3
Dimensions in mm
2.8 ± 0.2
15 ± 0.3
φ 3.2 ± 0.2
14 ± 0.5
3.6 ± 0.3
1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15
6.5 ± 0.3
3 ± 0.3
E
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25
1
23
3
• 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 35mΩ • ID .................................................................... –50A • Integrated Fast Recovery Diode (TYP.) ...........55ns • Viso ................................................................................ 2000V
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
2.6 ± 0.2
1
1 GATE 2 DRAIN 3 SOURCE
2
TO-220FN
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current VGS = 0V VDS = 0V
Conditions
Ratings –30 ±20 –50 –200 –50 –50 –200 30 –55 ~ +150 –55 ~ +150 2000 2.0
4.5 ± 0.2
Unit V V A A A A A W °C °C V g Jan.1999
Drain current (Pulsed) Avalanche drain current (Pulsed) L = 10µH Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight
AC for 1minute, Terminal to case Typical value
P
ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som
IM REL
Y NAR I
MITSUBISHI Pch POWER MOSFET
FX50KMJ-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter
(Tch = 25°C)
Test conditions ID = –1mA, VDS = 0V VGS = ±20V, VDS = 0V VDS = –30V, VGS = 0V ID = –1mA, VDS = –10V ID = –25A, VGS = –10V ID = –9A, VGS = –4V ID = –25A, VGS = –10V ID = –25A, VDS = –10V VDS = –10V, VGS = 0V, f = 1MHz
Limits Min. –30 — — –1.3 — — — — — — — — — — — — — — Typ. — — — –1.8 28 54 –0.70 23 4270 695 342 21 103 223 122 –1.0 — 55 Max. — ±0.1 –0.1 –2.3 35 72 –0.88 — — — — — — — — –1.5 4.17 —
Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns
Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = –15V, ID = –25A, VGS = –10V, RGEN = RGS = 50Ω
IS = –25A, VGS = 0V Channel to case IS = –25A, dis/dt = 50A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA
–2
–102 40
–7 –5 –3 –2
tw = 10µs 100µs
30
–101
–7 –5 –3 –2
1ms 10ms 100ms DC
20
10
–100
–7 –5 TC = 25°C Single Pulse
0
0
50
100
150
200
–3 –2 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS (TYPICAL) –100
VGS = –10V –8V –7V Tc = 25°C Pulse Test
OUTPUT CHARACTERISTICS (TYPICAL) –50
–6V –8V –5V
DRAIN CURRENT ID (A)
–80
–6V
DRAIN CURRENT ID (A)
–40
VGS = –10V
–60
–5V
–30
–4V
–40
–4V
–20
Tc = 25°C Pulse Test –3V PD = 30W
–20
PD = 30W
–10
–3V
0
0
–2
–4
–6
–8
–10
0
0
–1.0
–2.0
–3.0
–4.0
–5.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V) Jan.1999
P
ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som
IM REL
Y NAR I
MITSUBISHI Pch POWER MOSFET
FX50KMJ-03
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 100 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ)
Tc = 25°C Pulse Test VGS = –4V
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) –10 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
Tc = 25°C Pulse Test
–8
80
–6
60
–4
ID = –100A
40
–10V
–2
–50A –25A
20
0
0
–2
–4
–6
–8
–10
0 –100
–2 –3
–5 –7–101
–2 –3
–5 –7–102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
TRANSFER CHARACTERISTICS (TYPICAL) –100 DRAIN CURRENT ID (A)
Tc = 25°C VDS = –10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102
VDS = –10V 7 Pulse Test 5 4 75°C 125°C 3 TC = 25°C 2
–60
FORWARD TRANSFER ADMITTANCE yfs (S)
–80
101
7 5 4 3 2
–40
–20
0
0
–2
–4
–6
–8
–10
100 0 –10
–2 –3
–5 –7 –101
–2 –3 –5 –7 –102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104
7 5 4 3 2 Ciss
SWITCHING CHARACTERISTICS (TYPICAL) 103
Tch = 25°C 7 VGS = –10V 5 VDD = –15V 4 RGEN = RGS = 50Ω 3 2
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
td(off)
103
7 5 4 3 2 Tch = 25°C f = 1MHZ VGS = 0V –3 –5 –7–100 –2 –3 –5 –7–101 –2 –3 Coss Crss
102
7 5 4 3 2
tf tr
td(on)
102
101
–5 –7 –100 –2 –3
–5 –7–101
–2 –3
–5
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A) Jan.1999
P
ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som
IM REL
Y NAR I
MITSUBISHI Pch POWER MOSFET
FX50KMJ-03
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –100
VGS = 0V Pulse Test
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
–10
Tch = 25°C ID = –50A
SOURCE CURRENT IS (A)
–8
–80
–6
VDS = –10V –20V –25V
–60
–4
–40
TC = 25°C 75°C 125°C
–2
–20
0
0
20
40
60
80
100
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 –4.0
7 5 4 3 2 VGS = –10V ID = 1/2ID Pulse Test
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL)
VDS = –10V ID = –1mA
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
50 100 150
–3.2
–2.4
100
7 5 4 3 2
–1.6
–0.8
10–1
–50
0
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = –1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101
7 5 D=1 3 0.5 2 0 0.2 7 0.1 5 3 2 0.05 0.02 0.01 Single Pulse PDM
tw T D= tw T
1.2
10
1.0
0.8
10–1
7 5 3 2
0.6
0.4
–50
0
50
100
150
10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Jan.1999
CHANNEL TEMPERATURE Tch (°C)
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