FX50KMJ-2

P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX50KMJ-2 HIGH-SPEED SWITCHING USE FX50KMJ-2 OUTLINE DRAWING 10 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 6.5 ± 0.3 3 ± 0.3 E 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 1 23 3 • 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) ................................................ 50mΩ • ID .................................................................... –50A • Integrated Fast Recovery Diode (TYP.) .........100ns • Viso ................................................................................ 2000V APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. 2.6 ± 0.2 1 1 GATE 2 DRAIN 3 SOURCE 2 TO-220FN MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current VGS = 0V VDS = 0V Conditions Ratings –100 ±20 –50 –200 –50 –50 –200 35 –55 ~ +150 –55 ~ +150 2000 2.0 4.5 ± 0.2 Unit V V A A A A A W °C °C V g Jan.1999 Drain current (Pulsed) Avalanche drain current (Pulsed) L = 30µH Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight AC for 1minute, Terminal to case Typical value P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX50KMJ-2 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25°C) Test conditions ID = –1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = –100V, VGS = 0V ID = –1mA, VDS = –10V ID = –25A, VGS = –10V ID = –25A, VGS = –4V ID = –25A, VGS = –10V ID = –25A, VDS = –10V VDS = –10V, VGS = 0V, f = 1MHz Limits Min. –100 — — –1.0 — — — — — — — — — — — — — — Typ. — — — –1.5 39 47 –0.98 49.2 11130 896 480 57 118 828 380 –1.0 — 100 Max. — ±0.1 –0.1 –2.0 50 61 –1.25 — — — — — — — — –1.5 3.57 — Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = –50V, ID = –25A, VGS = –10V, RGEN = RGS = 50Ω IS = –25A, VGS = 0V Channel to case IS = –50A, dis/dt = 100A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA –3 –2 tw = 10µs 40 –102 –7 –5 –3 –2 30 –101 –7 –5 –3 –2 TC = 25°C Single Pulse 100µs 1ms 10ms DC 20 10 –100 –7 –5 0 0 50 100 150 200 100ms –3 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) –100 VGS = –10V –8V –6V Tc = 25°C Pulse Test OUTPUT CHARACTERISTICS (TYPICAL) –50 VGS = –10V –4V –8V –6V –5V –3V Tc = 25°C Pulse Test DRAIN CURRENT ID (A) –80 DRAIN CURRENT ID (A) –5V –40 –60 –4V –30 –40 –3V –20 –20 PD = 35W –10 PD = 35W 0 0 –2 –4 –6 –8 –10 0 0 –1.0 –2.0 –3.0 –4.0 –5.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX50KMJ-2 HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 100 ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) –10 Tc = 25°C Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) –8 80 –6 ID = –100A 60 VGS = –4V –4 –50A –25A 40 –10V Tc = 25°C Pulse Test –2 20 0 –100 0 0 –2 –4 –6 –8 –10 –2 –3 –5 –7–101 –2 –3 –5 –7–102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) –100 102 7 5 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) TC = 25°C 75°C 125°C DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) –80 Tc = 25°C VDS = –10V Pulse Test 3 2 –60 101 7 5 3 2 VDS = –10V Pulse Test –40 –20 0 0 –2 –4 –6 –8 –10 100 0 –10 –2 –3 –5 –7–101 –2 –3 –5 –7–102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 Ciss 2 SWITCHING CHARACTERISTICS (TYPICAL) 104 103 td(off) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 7 5 3 2 Tch = 25°C VGS = 0V f = 1MHZ 7 5 3 Tch = 25°C 2 VGS = –10V VDD = –50V 102 RGEN = RGS = 50Ω 7 5 3 2 –7 –100 –2 –3 –5 –7 –101 –2 –3 –5 –7 tf 103 7 5 3 2 tr td(on) Coss Crss –3 –5 –7–100 –2 –3 –5 –7–101 –2 –3 –5 –7–102 –2 –3 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX50KMJ-2 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –100 GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) –10 SOURCE CURRENT IS (A) –8 VDS = –20V –40V –80 TC = 25°C –6 –60 75°C 125°C –4 –80V Tch = 25°C ID = –50A –40 VGS = 0V Pulse Test –2 –20 0 0 40 80 120 160 200 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 –4.0 7 5 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) –3.2 VDS = –10V ID = –1mA –2.4 100 7 5 3 2 VGS = –10V ID = 1/2ID Pulse Test –1.6 –0.8 10–1 –50 0 50 100 150 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 D = 1.0 0.5 0.2 0.1 0.05 PDM tw 1.2 100 7 5 3 2 1.0 VGS = 0V ID = –1mA 0.8 10–1 7 5 3 2 0.02 0.01 Single Pulse T D= tw T 0.6 0.4 –50 0 50 100 150 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Jan.1999 CHANNEL TEMPERATURE Tch (°C)