FX6ASJ-3

P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX6ASJ-3 HIGH-SPEED SWITCHING USE FX6ASJ-3 OUTLINE DRAWING 6.5 5.0 ± 0.2 4 Dimensions in mm 5.5 ± 0.2 1.5 ± 0.2 0.5 ± 0.1 1.0 max 2.3 min 10 max 1.0 A 0.5 ± 0.2 0.8 0.9 max 2.3 2.3 2.3 1 2 3 3 • 4V DRIVE • VDSS ............................................................ –150V • rDS (ON) (MAX) ................................................ 0.53Ω • ID ..................................................................... –6A • Integrated Fast Recovery Diode (TYP.) ........ 100ns APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. 1 1 2 3 4 24 GATE DRAIN SOURCE DRAIN MP-3 MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage VGS = 0V VDS = 0V Conditions Ratings –150 ±20 –6 –24 –6 –6 –24 35 –55 ~ +150 –55 ~ +150 Unit V V A A A A A W °C °C g Jan.1999 Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) L = 100µH Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value 0.26 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX6ASJ-3 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25°C) Test conditions ID = –1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = –150V, VGS = 0V ID = –1mA, VDS = –10V ID = –3A, VGS = –10V ID = –3A, VGS = –4V ID = –3A, VGS = –10V ID = –3A, VDS = –10V VDS = –10V, VGS = 0V, f = 1MHz Limits Min. –150 — — –1.0 — — — — — — — — — — — — — — Typ. — — — –1.5 0.41 0.45 –1.23 7.9 2420 152 69 14 18 156 58 –1.0 — 100 Max. — ±0.1 –0.1 –2.0 0.53 0.59 –1.59 — — — — — — — — –1.5 3.57 — Unit V µA mA V Ω Ω V S pF pF pF ns ns ns ns V °C/W ns Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = –80V, ID = –3A, VGS = –10V, RGEN = RGS = 50Ω IS = –3A, VGS = 0V Channel to case IS = –6A, dis/dt = 100A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA –102 –7 –5 –3 –2 40 –101 –7 –5 –3 –2 tw = 10µs 100µs 1ms 10ms TC = 25°C Single Pulse DC 30 20 –100 –7 –5 –3 –2 10 0 0 50 100 150 200 –10–1 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 –3 –5–7–103 –2 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) –20 VGS = –10V OUTPUT CHARACTERISTICS (TYPICAL) –10 VGS = –10V –6V –3.5V –5V TC = 25°C –4V Pulse Test DRAIN CURRENT ID (A) –16 DRAIN CURRENT ID (A) –6V –5V –4V –8 –12 TC = 25°C Pulse Test –6 –3V –8 –3V –4 PD = 35W –4 PD = 35W –2 –2.5V 0 0 –4 –8 –12 –16 –20 0 0 –2 –4 –6 –8 –10 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX6ASJ-3 HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 1.0 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) TC = 25°C Pulse Test ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) –20 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) TC = 25°C Pulse Test –16 0.8 –12 0.6 VGS = –4V –10V –8 ID = –12A 0.4 –4 –6A –3A 0.2 0 –10–1 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 DRAIN CURRENT ID (A) 0 0 –2 –4 –6 –8 –10 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) –20 TC = 25°C VDS = –10V Pulse Test 2 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS = –10V Pulse Test TC = 25°C 75°C 125°C DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) –16 101 7 5 3 2 –12 –8 100 7 5 3 –4 0 0 –2 –4 –6 –8 –10 2 –7–10–1 –2 –3 –5 –7 –100 –2 –3 –5 –7 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 3 TCh = 25°C f = 1MHZ 3 VGS = 0V 10 7 5 3 2 2 Ciss SWITCHING CHARACTERISTICS (TYPICAL) 103 TCh = 25°C 7 VDD = –80V 5 VGS = –10V RGEN = RGS = 50Ω 3 2 td(off) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 102 7 5 3 2 tr td(on) tf 102 7 5 3 Coss Crss –2 –3 –5 –7 –101 –2 –3 –5 –7 –102 –100 101 –7–10–1 –2 –3 –5 –7 –100 –2 –3 –5 –7 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX6ASJ-3 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –20 VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) –10 TCh = 25°C ID = –6A SOURCE CURRENT IS (A) –8 VDS = –50V –80V –100V –16 TC = 125°C 75°C 25°C –6 –12 –4 –8 –2 –4 0 0 10 20 30 40 50 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 VGS = –10V 7 ID = 1/2ID 5 Pulse Test 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) –4.0 VDS = –10V ID = –1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) –3.2 –2.4 100 7 5 3 2 –1.6 –0.8 10–1 –50 0 50 100 150 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = –1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D = 1.0 3 0.5 2 0.2 7 0.1 5 3 2 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 1.2 100 1.0 0.8 10–1 7 5 3 2 0.6 0.4 –50 0 50 100 150 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Jan.1999 CHANNEL TEMPERATURE Tch (°C)