P
ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som
IM REL
Y NAR I
MITSUBISHI Pch POWER MOSFET
FX70SMJ-03
HIGH-SPEED SWITCHING USE
FX70SMJ-03
OUTLINE DRAWING
15.9 max
Dimensions in mm
4.5 1.5
4
2
2
4
20.0
φ 3.2
5.0
19.5 min
4.4
G
0.6 2.8
1.0
1 2 3
5.45
5.45
4
3
• 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ............................................. 12.3mΩ • ID .................................................................... –70A • Integrated Fast Recovery Diode (TYP.) ...........70ns
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
1
1 2 3 4 24
GATE DRAIN SOURCE DRAIN
TO-3P
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage VGS = 0V VDS = 0V
Conditions
Ratings –30 ±20 –70 –280 –70 –70 –280 150 –55 ~ +150 –55 ~ +150
Unit V V A A A A A W °C °C g Jan.1999
Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) L = 10µH Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value
4.8
P
ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som
IM REL
Y NAR I
MITSUBISHI Pch POWER MOSFET
FX70SMJ-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter
(Tch = 25°C)
Test conditions ID = –1mA, VDS = 0V VGS = ±20V, VDS = 0V VDS = –30V, VGS = 0V ID = –1mA, VDS = –10V ID = –35A, VGS = –10V ID = –26A, VGS = –4V ID = –35A, VGS = –10V ID = –35A, VDS = –10V VDS = –10V, VGS = 0V, f = 1MHz
Limits Min. –30 — — –1.3 — — — — — — — — — — — — — — Typ. — — — –1.8 10.0 19 –0.35 55.8 11140 2300 1000 85 228 751 360 –1.0 — 70 Max. — ±0.1 –0.1 –2.3 12.3 25 –0.43 — — — — — — — — –1.5 0.83 —
Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns
Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = –15V, ID = –35A, VGS = –10V, RGEN = RGS = 50Ω
IS = –35A, VGS = 0V Channel to case IS = –35A, dis/dt = 50A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 250 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA
–3 –2
200
–102
–7 –5 –3 –2
tw = 100µs
1ms 10ms TC = 25°C Single Pulse DC
150
–101
–7 –5 –3 –2
100
50
–100 0 0 50 100 150 200
–7 –5 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS (TYPICAL) –100
VGS = –10V –8V –6V
OUTPUT CHARACTERISTICS (TYPICAL) –50
VGS = –10V –8V –4V –6V –5V
DRAIN CURRENT ID (A)
–80
DRAIN CURRENT ID (A)
PD = 150W –5V
–40
–60
–30
–40
Tc = 25°C Pulse Test
–4V
–20
–3V
–20
–10
Tc = 25°C Pulse Test
–3V
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
0
0
–0.2
–0.4
–0.6
–0.8
–1.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V) Jan.1999
P
ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som
IM REL
Y NAR I
MITSUBISHI Pch POWER MOSFET
FX70SMJ-03
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 40
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ)
Tc = 25°C Pulse Test
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) –2.0
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
Tc = 25°C Pulse Test
–1.6
ID = –100A
32
–1.2
24
VGS = –4V
–0.8
–70A
16
–10V
–0.4
–35A
8 0 –100 –2 –3 –5 –7–101 –2 –3 –5–7 –102 –2 –3 –5 –7–103 DRAIN CURRENT ID (A)
0
0
–2
–4
–6
–8
–10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) –100
DRAIN CURRENT ID (A)
Tc = 25°C VDS = –10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102
VDS = –10V 7 Pulse Test 5 4 3 2 TC = 125°C 75°C 25°C
–60
FORWARD TRANSFER ADMITTANCE yfs (S)
–80
101
7 5 4 3 2
–40
–20
0
0
–2
–4
–6
–8
–10
100 0 –10
–2 –3
–5 –7 –101
–2 –3 –5 –7 –102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL)
2 Tch = 25°C
SWITCHING CHARACTERISTICS (TYPICAL) 103
7 5 4 3 2 tf td(off)
105 f = 1MHZ
3 2
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
7 VGS = 0V 5
104
7 5 3 2
Ciss
tr td(on)
102
7 5 4 3 2
Coss Crss
103
7 5 3 2 –3 –5 –7 –100
–2 –3 –5 –7 –101
–2 –3
101
Tch = 25°C VGS = –10V VDD = –15V RGEN = RGS = 50Ω
–5 –7 –100 –2 –3 –5 –7 –101 –2 –3 –5 –7 –102 –2 –3 –5
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A) Jan.1999
P
ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som
IM REL
Y NAR I
MITSUBISHI Pch POWER MOSFET
FX70SMJ-03
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –100
VGS = 0V Pulse Test
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
–10
Tch = 25°C ID = –70A
SOURCE CURRENT IS (A)
–8
VDS = –10V –20V –25V
–80
–6
–60
TC = 25°C 75°C 125°C
–4
–40
–2
–20
0
0
40
80
120
160
200
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 –4.0
7 5 4 3 2 VGS = –10V ID = 1/2ID Pulse Test
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL)
VDS = –10V ID = –1mA
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
50 100 150
–3.2
–2.4
100
7 5 4 3 2
–1.6
–0.8
10–1
–50
0
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = –1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101
7 5 3 2
1.2
100 D = 1.0
7 5 0.5 3 0.2 2 0.1 PDM
tw
1.0
0.8
10–1
7 5 3 2 0.05 0.02 0.01 Single Pulse
T D= tw T
0.6
0.4
–50
0
50
100
150
10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s)
CHANNEL TEMPERATURE Tch (°C)
Jan.1999
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