MITSUBISHI Pch POWER MOSFET
FY8ABJ-03
HIGH-SPEED SWITCHING USE
FY8ABJ-03
OUTLINE DRAWING
Dimensions in mm
6.0 4.4
5.0
1.8 MAX.
0.4 1.27
SOURCE GATE DRAIN
q 4V DRIVE q VDSS ............................................................................... –30V q rDS (ON) (MAX) ............................................................. 20mΩ q ID ......................................................................................... –8A
SOP-8
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings –30 ±20 –8 –56 –8 –2.1 –8.4 2.0 –55 ~ +150 –55 ~ +150 0.07
Unit V V A A A A A W °C °C g Sep.1998
L = 10µH
MITSUBISHI Pch POWER MOSFET
FY8ABJ-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Parameter Drain-source breakdown voltage
(Tch = 25°C)
Test conditions ID = –1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = –30V, VGS = 0V ID = –1mA, VDS = –10V ID = –8A, VGS = –10V ID = –4A, VGS = –4V ID = –8A, VGS = –10V ID = –8A, VDS = –10V VDS = –10V, VGS = 0V, f = 1MHz
Limits Min. –30 — — –1.5 — — — — — — — — — — — — — — Typ. — — — –2.0 14 26 0.112 19 3650 900 385 30 55 250 105 –0.77 — 100 Max. — ±0.1 –0.1 –2.5 20 37 0.160 — — — — — — — — –1.20 62.5 —
Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns
Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = –15V, ID = –4A, VGS = –10V, RGEN = RGS = 50Ω
IS = –2.1A, VGS = 0V Channel to ambient IS = –2.1A, dis/dt = 50A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 2.5 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA –102
–7 –5 –3 –2 –7 –5 –3 –2 –7 –5 –3 –2 –7 –5 –3 –2 tw = 1ms
2.0
–101
1.5
10ms 100ms Tc = 25°C Single Pulse DC
–100
1.0
0.5
–10–1
0
0
50
100
150
200
–10–2 –2 –10 –2–3 –5–7–10–1 –2–3 –5–7–100 –2–3 –5–7–101 –2–3 –5–7–102 DRAIN-SOURCE VOLTAGE VDS (V)
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS (TYPICAL) –50
VGS = –10V –8V –4V –6V –5V
OUTPUT CHARACTERISTICS (TYPICAL) –20
VGS = –10V –4V –5V –6V –8V –3V Tc = 25°C Pulse Test
DRAIN CURRENT ID (A)
–40
DRAIN CURRENT ID (A)
–16
–30
Tc = 25°C Pulse Test
–12
–20
–3V
–8
–2.5V
–10
PD = 2W
–4
PD = 2W
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V) Sep.1998
MITSUBISHI Pch POWER MOSFET
FY8ABJ-03
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) –2.0 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
Tc = 25°C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 40
Tc = 25°C Pulse Test VGS = –4V
–1.6
32
–1.2
24
–0.8
ID = –32A –24A
16
–10V
–0.4
–16A –8A
8 0 –10–1 –2 –3 –5–7 –100 –2 –3 –5–7 –101 –2 –3 –5 DRAIN CURRENT ID (A)
0
0
–2
–4
–6
–8
–10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) –40
Tc = 25°C VDS = –10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 102
7 5 Tc =25°C 75°C 125°C
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE yfs (S)
–32
3 2
–24
101
7 5 3 2 VDS = –10V Pulse Test
–16
–8
0
0
–2
–4
–6
–8
–10
100
–5 –7 –100
–2 –3
–5 –7 –101
–2 –3
–5
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL)
2
SWITCHING CHARACTERISTICS (TYPICAL) 103
7 5 Tch = 25°C VDD = –15V VGS = –10V RGEN = RGS = 50Ω
104 CAPACITANCE Ciss, Coss, Crss (pF)
7 5 3 2
SWITCHING TIME (ns)
Tch = 25°C VGS = 0V f = 1MHZ Ciss
3 2
td(off)
tf
102
7 5 3 2 tr
103
7 5 3 2
Coss Crss
td(on)
–5–7–10–1 –2 –3 –5–7 –100 –2 –3 –5–7 –101 –2 –3
101 –1 –10 –2 –3
–5 –7 –100
–2 –3
–5 –7 –101
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A) Sep.1998
MITSUBISHI Pch POWER MOSFET
FY8ABJ-03
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) –10
Tch = 25°C ID = –8A
SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –40 SOURCE CURRENT IS (A)
VGS = 0V Pulse Test
–8
VDS = –25V –20V –10V
–32
Tc = 25°C 75°C 125°C
–6
–24
–4
–16
–2
–8
0
0
20
40
60
80
100
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
7 5 3 2 VGS = –10V ID = –8A Pulse Test
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) –2.0
VDS = –10V ID = –1mA
–1.6
–1.2
100
7 5 3 2
–0.8
–0.4
10–1
–50
0
50
100
150
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch – a) (°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = –1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102
7 5 D = 1.0 3 0.5 2 7 5 3 2 7 5 3 2 7 5 3 2 0.2 0.1 0.05 PDM 0.02 0.01 Single Pulse
tw T D= tw T
1.2
101
1.0
100
0.8
0.6
10–1
0.4
–50
0
50
100
150
10–2 10–4 2 3 5710–3 23 5710–2 23 5710–12 3 57100 2 3 57 101 2 3 57102 2 3 57103 PULSE WIDTH tw (s) Sep.1998
CHANNEL TEMPERATURE Tch (°C)
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