QID4515001

QID4515001 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBT HVIGBT Module 150 Amperes/4500 Volts S NUTS (3TYP) A D F C J (2TYP) N 7 8 F H 1 2 M 5 6 B E 3 4 H V (4TYP) G (3TYP) R (DEEP) K (3TYP) T (SCREWING DEPTH) L (2TYP) Description: Powerex HVIGBTs feature highly insulating housings that offer enhanced protection by means of greater creepage and strike clearance distance for many demanding applications like medium voltage drives and auxiliary traction applications. U (5TYP) P Q 1 4 5 6 2 8 3 7 Outline Drawing and Circuit Diagram Dimensions Inches Dimensions Inches Millimeters 140.0 L 0.69±0.01 17.5±0.25 2.87 73.0 M 0.38 9.75 1.89 48.0 N 0.20 5.0 A 5.51 B C Millimeters D 4.88±0.01 124.0±0.25 P 0.22 5.5 E 2.24±0.01 57.0±0.25 Q 1.44 36.5 F 1.18 30.0 R G 0.43 11.0 S H 1.07 27.15 J 0.20 5.0 K 1.65 42.0 V 0.16 4.0 M6 Metric M6 T 0.63 Min. 16.0 Min. U 0.11 x 0.02 2.8 x 0.5 0.28 Dia. 7.0 Dia. Features:  -40 to 150°C Extended  Temperature Range  100% Dynamic Tested  100% Partial Discharge Tested  Advanced Mitsubishi H-Series Chip Technology  Aluminum Nitride (AlN) Ceramic Substrate for Low Thermal Impedance  Complementary Line-up in Expanding Current Ranges to Mitsubishi HVIGBT Power Modules  Copper Baseplate  Creepage and Clearance Meet IEC 60077-1  Rugged SWSOA and RRSOA Applications:  High Voltage Power Supplies  Medium Voltage Drives  Motor Drives  Traction Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 11/14 Rev. 10 1 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID4515001 Dual IGBT HVIGBT Module 150 Amperes/4500 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol QID4515001 Units Junction Temperature Storage Temperature Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (VGE = 0V) VCES 4500 Volts Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts Collector Current, DC (TC = 91°C) IC ICM 300*1 Amperes Peak Collector Current (Pulse) Diode Forward Current*2 IF Diode Forward Surge Current (Pulse)*2 150 Amperes 150 Amperes IFM 300*1 Amperes I2t for Diode (t = 10ms) I2t 10 kA2sec Maximum Collector Dissipation (TC = 25°C, IGBT Part, Tj(max) ≤ 150°C) PC 1440 Watts Mounting Torque, M6 Terminal Screws — Mounting Torque, M6 Mounting Screws — 44 in-lb Module Weight (Typical) — 900 Grams 44 in-lb Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.) Viso 9.0 kVolts Partial Discharge Qpd 10 pC (V1 = 4800 VRMS, V2 = 3500 VRMS, f = 60Hz (Acc. to IEC 1287)) Maximum Short-Circuit Pulse Width, tpsc 10 µs (VCC ≤ 3200V, VGE = ±15V, RG(off) ≥ 60Ω, Tj = 125°C) Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V — — 2.7 mA IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 10mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 150A, VGE = 15V, Tj = 25°C — 3.5 3.9*3 Volts IC = 150A, VGE = 15V, Tj = 125°C — 4.0 — Volts Total Gate Charge QG VCC = 2250V, IC = 150A, VGE = 15V — 1.4 — µC Emitter-Collector Voltage*2 VEC IE = 150A, VGE = 0V — 4.7 5.6 Volts *1 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *2 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *3 Pulse width and repetition rate should be such that device junction temperature rise is negligible. Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 2 11/14 Rev. 10 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID4515001 Dual IGBT HVIGBT Module 150 Amperes/4500 Volts Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Max. Units — 18 Typ. — nF — 1.33 — nF — 0.4 — nF Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Turn-on Delay Time td(on) VCC = 2250V, IC = 150A, — — 1.5 µs tr VGE = ±15V, — — 0.5 µs td(off) RG = 60Ω, LS = 180nH — — 3.5 µs tf Inductive Load — — 1.2 µs Turn-on Switching Energy Eon Tj = 125°C, IC = 150A, VGE = ±15V, — 600 — mJ/P Turn-off Switching Energy Eoff RG = 60Ω, VCC = 2250V, — 450 — mJ/P — — 1.8 µs Rise Time Turn-off Delay Time Fall Time VGE = 0V, VCE = 10V LS = 180nH , Inductive Load Diode Reverse Recovery Time*2 trr VCC = 2250V, IE = 150A, Qrr VGE = ±15V, RG(on) = 60Ω, — 81*1 — µC Diode Reverse Recovery Energy Erec LS = 180nH , Inductive Load — 55 — mJ/P Stray Inductance (C1-E2) LSCE — 60 — nH Lead Resistance Terminal-Chip RCE — 0.8 — mΩ Test Conditions Min. Typ. Max. Units Diode Reverse Recovery Charge*2 Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Case*4 Rth(j-c) Q Per IGBT — — 0.087 °C/W Thermal Resistance, Junction to Case*4 Rth(j-c) D Per FWDi — — 0.174 °C/W — °C/W Thermal Resistance, Junction to Contact Thermal Resistance, Case to Fin Rth(c-f) Per Module, — 0.018 Thermal Grease Applied, λgrease = 1W/mK Comparative Tracking Index — — Clearance Distance in Air (Terminal to Base) da(t-b) CTI 35.0 — 600 — mm Creepage Distance Along Surface ds(t-b) 64 — — mm da(t-t) 19 — — mm ds(t-t) 54 — mm (Terminal to Base) Clearance Distance in Air (Terminal to Terminal) Creepage Distance Along Surface — (Terminal to Terminal) *1 Pulse width and repetition rate should be such that device junction temperature rise is negligible. *2 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *4 TC measurement point is just under the chips. Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 11/14 Rev. 10 3 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID4515001 Dual IGBT HVIGBT Module 150 Amperes/4500 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 6 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) VGE = 15V Tj = 25°C Tj = 125°C 5 4 3 2 1 0 50 100 150 200 250 4 3 2 1 0 0 50 100 150 200 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) Single Pulse Tj = 25°C Per Unit Base = Rth(j-c) = 0.087 K/W 0.8 0.6 0.4 0.2 0 10-3 5 EMITTER CURRENT, IE, (AMPERES) 1.2 1.0 Tj = 25°C Tj = 125°C COLLECTOR CURRENT, IC, (AMPERES) 10-2 10-1 TIME, (s) 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 6 0 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 250 1.2 1.0 Single Pulse Tj = 25°C Per Unit Base = Rth(j-c) = 0.174 K/W 0.8 0.6 0.4 0.2 0 10-3 10-2 10-1 100 TIME, (s) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 4 11/14 Rev. 10 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID4515001 Dual IGBT HVIGBT Module 150 Amperes/4500 Volts HALF-BRIDGE TURN-OFF SWITCHING ENERGY CHARACTERISTICS (TYPICAL) TURN-OFF SWITCHING ENERGY, Eoff, (mJ/PULSE) 1250 VCC = 2250V VGE = ±15V RG = 60Ω LS = 180nH Tj = 125°C Inductive Load Integrated Over Range of 10% 1000 750 500 250 0 0 50 100 150 200 VCC = 2250V VGE = ±15V RG = 60Ω LS = 180nH Tj = 125°C Inductive Load Integrated Over Range of 10% 625 500 375 250 125 0 0 50 100 150 COLLECTOR CURRENT, IC, (AMPERES) FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) TURN-OFF SWITCHING SAFE OPERATING AREA (RBSOA) (TYPICAL) 200 350 75.0 62.5 50.0 VCC = 2250V VGE = ±15V RG = 60Ω LS = 180nH Tj = 125°C Inductive Load Integrated Over Range of 10% IGBT Drive Conditions 37.5 25.0 12.5 0 750 COLLECTOR CURRENT, IC, (AMPERES) 0 50 100 150 EMITTER CURRENT, IE, (AMPERES) 200 COLLECTOR CURRENT, IC, (AMPERES) REVERSE RECOVERY ENERGY, Erec, (mJ/PULSE) TURN-ON SWITCHING ENERGY, Eon, (mJ/PULSE) HALF-BRIDGE TURN-ON SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 300 250 200 150 VCC ≤ 3000V VGE = ±15V RG ≥ 60Ω LS = 100nH Tj = 125°C 100 50 0 0 1000 2000 3000 4000 5000 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 11/14 Rev. 10 5 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QID4515001 Dual IGBT HVIGBT Module 150 Amperes/4500 Volts REVERSE RECOVERY CURRENT, Irr, (AMPERES) DIODE REVERSE RECOVERY SAFE OPERATING AREA (TYPICAL) 350 VCC ≤ 3000V di/dt ≤ 500A/µs Tj = 125°C 300 250 200 150 100 50 0 0 1000 2000 3000 4000 5000 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 6 11/14 Rev. 10