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QIS4506001

QIS4506001

  • 厂商:

    POWEREX(鑫鸿)

  • 封装:

    模块

  • 描述:

    IGBT MOD SINGLE 4500V 60A

  • 数据手册
  • 价格&库存
QIS4506001 数据手册
QIS4506001 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Single Discrete IGBT 60 Amperes/4500 Volts A C D H E E (3) G F G (2) B C (BASE) E (1) J Q P N Description: Powerex Single Non-isolated Discrete is designed specially for customer high voltage switching and pulse power applications. L K M Features: E (1) C (BASE) E (3) G (2)  Low Drive Requirement  Low VCE(sat)  Non-Isolated Molybdenum Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 2.11 53.6 J 0.14 B 0.98 25.0 K 0.22 5.7 C 2.01 51.0 L 0.43 10.8 D 0.2 5.0 M 0.04 1.0 E. 0.1 2.5 N 0.43 10.9 F 0.27 6.9 P G 0.49 12.5 H 0.46 Max. Q 0.02 0.21 Dia. 3.6 Mounting Plate  IGBT is designed to be used by being immersed in oil or conformal coated in assembly 0.5 5.3 Dia. 11.8 Max. Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 01/16 Rev. 5 1 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QIS4506001 Single Discrete IGBT 60 Amperes/4500 Volts Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol QIS4506001 Units Collector Emitter Voltage VCES 4500 Volts Gate Emitter Voltage VGES ±20 Volts Collector Current (DC, TC = 127°C) IC Peak Collector Current (Pulsed) ICM 60 Amperes 120* Amperes Junction Temperature Tj -55 to 150 Storage Temperature °C Tstg -55 to 125 °C Mounting Torque, M5 Mounting Screws — 30 in-lb Weight (Typical) — 20 Grams Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Collector Cutoff Current Gate Leakage Current Test Conditions ICES VCE = VCES, VGE = 0V IGES VGE = VGES, VCE = 0V Gate-Emitter Threshold Voltage VGE(th) IC = 7mA, VCE = 10V Collector-Emitter Saturation Voltage Min. Typ. Max. Units — — 1.0 mA — — 0.5 µA 4.5 6.0 7.5 Volts VCE(sat) IC = 60A, VGE = 15V, Tj = 25°C — 3.0 3.9** Volts IC = 60A, VGE = 15V, Tj = 125°C — 3.6 — Volts Total Gate Charge — 450 — nC Min. Typ. Max. Units QG VCC = 2250V, IC = 60A, VGE = 15V Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Input Capacitance Cies — 9.0 — nF Output Capacitance Coes VGE = 0V, VCE = 10V — 0.65 — nF Reverse Transfer Capacitance Cres — 0.2 — nF Resistive Turn-on Delay Time td(on) VCC = 2250V, — Load Rise Time Switching Turn-off Delay Time Times Fall Time tr IC = 60A, td(off) VGE1 = VGE2 = 15V, tf RG = 120Ω — 2.4 µs — — 2.4 µs — — 6.0 µs — — 1.2 µs Turn-on Switching Energy Eon Tj = 125°C, IC = 60A, VCC = 2250V, — 250 — mJ/P Turn-off switching Energy Eoff VGE = ±15V, RG = 120Ω, LS = 180nH — 170 — mJ/P Min. Typ. Max. Units Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Thermal Resistance, Junction to Case Rth(j-c) Thermal Resistance, Case to Sink Rth(c-s) Test Conditions IGBT λgrease = 1W/mK — 0.10 0.12 °C/W — 0.10 — °C/W Thermal Grease Applied * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed device rating. **Pulse width and repetition rate should be such that device junction temperature rise is negligible. Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 2 01/16 Rev. 5 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QIS4506001 Single Discrete IGBT 60 Amperes/4500 Volts OUTPUT CHARACTERISTICS (TYPICAL) VGE = 20V 15V 875 14V 12V 10V COLLECTORCURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 100 TRANSFER CHARACTERISTICS (TYPICAL) 75 50 25 8V Tj = 25°C 0 0 2 4 6 8 750 625 500 375 250 125 0 10 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTAGE) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 6 VGE = 15V Tj = 25°C Tj = 125°C 5 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VCE = 10V Tj = 25°C Tj = 125°C 4 3 2 1 0 0 25 50 75 100 COLLECTOR CURRENT, IC, (AMPERES) 125 20 Tj = 25°C 8 IC = 100A 6 IC = 50A 4 IC = 25A 2 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 01/16 Rev. 5 3 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QIS4506001 Single Discrete IGBT 60 Amperes/4500 Volts TURN-OFF SWITCHING ENERGY CHARACTERISTICS (TYPICAL) TURN-ON SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 360 400 300 200 100 0 0 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) TURN-OFF SWITCHING ENERGY, Eoff, (mJ/P) VCC = 2250V VGE = 15V RG = 120Ω LS = 180nH Tj = 125°C Inductive Load Integrated Over Range of 10% 25 50 75 VCC = 2250V VGE = 15V RG = 120Ω LS = 180nH Tj = 125°C Inductive Load Integrated Over Range of 10% 300 240 180 120 60 0 100 0 25 50 75 100 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) GATE CHARGE CHARACTERISTICS (TYPICAL) CAPACITANCE CHARACTERISTICS (TYPICAL) 102 VCC = 2250V IC = 60A CAPACITANCE, Cies, Coes, Cres, (nF) TURN-ON SWITCHING ENERGY, Eon, (mJ/P) 500 16 12 8 4 VGE = 15V Tj = 25°C Cies, Coes: f = 100kHz Cres: f = 1MHz Cies 101 100 Coes Cres 0 0 250 500 750 GATE CHARGE, QG, (nC) 1000 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 4 01/16 Rev. 5 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com REVERSE BIAS SAFE OPERATING AREA (RBSOA) (TYPICAL) COLLECTOR CURRENT, IC, (VOLTS) 150 120 90 60 VCC = 3000V VGE = ±15V RG = 120Ω LS = 100nH Tj = 125°C 30 0 0 1000 2000 3000 4000 5000 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) QIS4506001 Single Discrete IGBT 60 Amperes/4500 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) 1.2 1.0 0.8 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.10°C/W 0.6 0.4 0.2 0 10-4 10-3 10-2 10-1 100 TIME, (s) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) Ζth(j-c) n (t) = ∑ i=1 1 Ri (˚C/W) τi (sec) -t Ri 1–exp τi 2 4 3 -6.55E-03 1.66E-02 6.24E-03 8.32E-02 3.33E-04 7.57-E-04 2.34E-03 1.34E-02 Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. 01/16 Rev. 5 5
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