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VLA567-11R

VLA567-11R

  • 厂商:

    POWEREX(鑫鸿)

  • 封装:

    DIP28 模块

  • 描述:

    半桥 栅极驱动器 IC 非反相 模块

  • 数据手册
  • 价格&库存
VLA567-11R 数据手册
HYBRID IC VLA567-11R DRIVER FOR IGBT MODULES DESCRIPTION VLA567-11R is the hybrid integrated circuit of 2ch IGBT drivers. Dimensions: mm OUTLINE DRAWING 62.0max This device include the isolated type DC-DC converter for Gate drive. Therefore design of the gate power supply is not required. 44 23 1 22 to time by function to maintain reverse bias for a predetermined time after the detection of short circuit. 45.72 48.0max The system of built-in short circuit protection provide a margin Recommended IGBT modules: VCES = 600V series up to 600A class range of electrical characteristics and maximum rating. ) 0.5+/-0.1 4.5+/-1.5 FEATURES Low height, DIP structure Built in the isolated DC-DC converter for gate drive 0.27+0.17/-0.1 17.0max (Please keep the condition not to deviate from the recommended 3.5 VCES = 1200V series up to 600A class 2.54 Output peak current is +/-8A(max) Built in short circuit protection Electrical isolation voltage is 2500Vrms (for 1 minute) CMOS compatible input interface Adjustable fall time on activity of short circuit protection. APPLICATIONS To drive IGBT modules for inverter or AC servo systems application BLOCK DIAGRAM 24 VCC1 DETECT1 Ctrip1 25 TIMER& RESET VI+1 DETECT 40 1kohm VI‐1 LATCH 41 INTERFACE 240ohm GATE SHUT DOWN  PC TEST2 42 VCC1 Gi 44 43 VEE2 1kohm N.C 1 2 3 27 Fo1 Cs1 VEE1 31 N.C 30 VCC2 LATCH DETECT 4 5 E1 29 UVL TIMER& RESET VI‐2 Vo1 VEE1 TEST1 1 VI+2 26 28 UVL DC-AC CONVERTER VD 23 INTERFACE 240ohm PC GATE SHUT DOWN  14 N.C 20 22 VCC2 DETECT2 21 Ctrip2 19 Vo2 17 E2 16 Fo2 Cs2 VEE2 15 18 Oct.2018 HYBRID IC VLA567-11R DRIVER FOR IGBT MODULES MAXIMUM RATINGS (Unless otherwise noted, Ta=25deg) Symbol Parameter Conditions Ratings Unit VD Supply voltage DC 16.5 V VI Input signal voltage Applied between VI+ - VI50% Duty cycle , pulse width 1ms -1 ~ +7 V Output peak current Pulse width 2us 8 A -8 A IOHP IOLP Topr Operating temperature No condensation allowable -20 ~ 70 deg Tstg Storage temperature No condensation allowable(*1) -40 ~ 90 deg IFo Fault output current Applied Fo-pin 20 mA VR-DET Input voltage at DETECT-pin Applied DETECT-pin 50 V Idrive Gate drive current Gate average current (Per one circuit) 100 mA Viso1 Isolation voltage between input and output Sine wave voltage, 60Hz, 1min 2500 Vrms Viso2 Isolation voltage between each output Sine wave voltage, 60Hz, 1min 2500 Vrms (*1) Differs from heat cycle condition ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta=25deg, VD=15V, RG=2ohm) Symbol VD Parameter Conditions Min 14.2 Limits Typ 15.0 Max 15.8 4.75 5.00 5.25 Supply voltage Recommended range VIN Pull-up voltage on input side Recommended range (In case of VIN=15V, please control the amount of “H” input current in recommended range.) IIH “H” input signal current(*3) Recommended range 10 13 16 mA Switching frequency Recommended range - - 20 kHz Recommended range 2 - - ohm - 16.8 - V f V V RG Gate resistance Vcc Gate positive supply voltage VEE η VOH Gate negative supply voltage Gate supply efficiency “H” output voltage (*3) ― VD=15V, Load current = 100mA×2 RG=2ohm, f=10kHz, Load=0.22uF 70 13.5 -8.5 79 15.5 16.5 V % V VOL “L” output voltage (*3) RG=2ohm, f=10kHz, Load=0.22uF -5.0 -8.0 -11.9 V ― “L-H” propagation time (*3) IIH = 13mA 0.1 0.4 0.8 µs “L-H” rise time(*3) IIH = 13mA - 0.4 1 µs “H-L” propagation time (*3) IIH = 13mA 0.1 0.4 0.8 µs “H-L” fall time(*3) IIH = 13mA - 0.3 1 µs Timer Between start and cancel (under input sign “L”) 1 - 2 ms IFO Fault output current Applied pin 16,29(*4) - 5 - mA ttrip1 Controlled time detect short circuit 1 Pin 22,23 : 15V and more, pin 21,24 : open - 2.4 - µs ttrip2 Controlled time detect short circuit 2 (*2) Pin 22,23 : 15V and more, pin 17-21,24-28 : 47pF (connective capacitance) - 3.2 - µs VSC SC detect voltage Collector voltage of module 15 - - V - V - V tPLH tr tPHL tf ttimer Under voltage lock out Voltage of Vcc 12.5 (Operation start) Under voltage lock out Voltage of Vcc UVLO-_Vcc 11.5 (Operation stop) (*2) Length of wiring of capacitor controlled time detect short-circuit is within 5cm from pin 17 and 21 (24 and 28) coming and going. (*3) When LED of PC is ON(luminescence), Vo is high. (*4) With pull up 4.7k ohm UVLO+_Vcc 2 Unit HYBRID IC VLA567-11R DRIVER FOR IGBT MODULES PERFORMANCE CURVES (Unless otherwise noted, Ta=25deg, VD=15V, RG=2 ohm, driving only single circuit) (ID: Input current for power supply, Idrive: gate average current, Io: DC load) 20 18 20 16 16 14 14 12 |VEE| 10 8 VD=15V RG=2 ohm Load:C=0.22uF f=10KHz 6 4 DC Load 18 Vcc VCC , |VEE|(V) VCC , |VEE|(V) VCC,|VEE|‐IO CHARACTERISTICS (TYPICAL) Vcc,|VEE| CHARACTERISTICS (TYPICAL) VD=15.8V 10 8 VD=14.2V 4 0 20 40 60 80 0 20 0.9 PROPAGATION  DELAY  TIME “L‐H” tPLH(μS) PROPAGATION  DELAY  TIME “H‐L” tPHL(μS) tPLH, tPHL‐Ta CHARACTERISTICS (TYPICAL) 1.0 VD=15V RG=2ohm Load:C=0.22uF 0.8 0.7 0.6 0.5 tPLH 0.4 0.3 tPHL 0.2 0.1 0.0 ‐20 0 20 40 60 0.6 0.5 tPLH 0.4 0.3 tPHL VD=15V Load:C=0.22uF 0.2 0.1 3.5 ttrip2(Ctrip=47pF) 3.0 2.5 2.0 ttrip1(Ctrip=0pF) 1.5 4 4.5 5 5.5 6 ttrip‐Ctrip  CHARACTERISTICS (TYPICAL) 8.0 CONTROLLED  TIME  DETECT SHORT  CIRCUIT  ttrip(μs) 3.5 100 INPUT  SIGNAL  VOLTAGE VI(V) VD=15V RG=2ohm Load:C=0.22uF 4.0 80 0.0 80 ttrip‐Ta CHARACTERISTICS (TYPICAL) 4.5 60 tPLH, tPHL‐VI CHARACTERISTICS (TYPICAL) AMBIENT  TEMPERATURE Ta(deg ) 5.0 40 LOAD  CURRENT IO(A) Pin:18‐20(27‐25) AMBIENT  TEMPERATURE Ta(deg) PROPAGATION  DELAY  TIME “L‐H” tPLH(μS) PROPAGATION  DELAY  TIME “H‐L” tPHL(μS) VD=15.8V 0 ‐20 CONTROLLED  TIME  DETECT SHORT  CIRCUIT  ttrip1,ttrip2(μs) VD=15V 2 0 1.0 VD=15V RG=2ohm Load:C=0.22uF 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.5 0.0 ‐20 0 20 40 60 AMBIENT  TEMPERATURE Ta(deg) 3 VD=14.2V 12 6 2 VD=15V 80 0.0 0 50 100 150 200 250 300 CONNECTIVE  CAPACITANCE  Ctrip(pF) Pin:17‐21(24‐28) HYBRID IC VLA567-11R DRIVER FOR IGBT MODULES ID‐IO CHARACTERISTICS (TYPICAL) INPUT  CURRENT ID(A) 0.5 20 “H” OUTPUT  VOLTAGE  VOH(V) “L” OUTPUT  VOLTAGE |VOL|(V) 0.6 VD=15V Driving double circuit 0.4 0.3 0.2 0.1 0 0.00 0.02 0.04 0.06 0.08 18 14 12 10 8 |VOL| 6 VD=15V RG=2 ohm Load:C=0.22uF f=10kHz 4 2 0 0.10 ‐20 20 40 60 80 VCC , |VEE|‐VD CHARACTERISTICS (TYPICAL) η‐Idrive CHARACTERISTICS (TYPICAL) 20 80 18 70 16 VCC 14 60 50 40 VD=15V Driving double circuit 30 0 AMBIENT  TEMPERATURE Ta(deg) VCC , |VEE|(V) EFFICIENCY η(%) VOH 16 LOAD  CURRENT Io(A) Pin:44, 18‐20(27‐25) 90 VOH,|VOL|‐Ta  CHARACTERISTICS (TYPICAL) 20 Io=0.1A 12 10 |VEE| 8 6 4 10 2 0 0.00 0.02 0.04 0.06 0.08 0 0.10 14.0 GATE  DRIVE  CURRENT Idrive(A) 14.5 15.0 15.5 16.0 SUPPLY  VOLTAGE VD(V) η‐VD  CHARACTERISTICS (TYPICAL) DERATING CHARACTERISTICS 90 0.12 Io=0.1A Driving double circuit 0.10 Idrive(A) 0.08 EFFICIENCY η(%) 85 Load:C=0.22uF Driving double circuit 0.06 0.04 VIN=14.2V 75 VIN=15V 0.02 VIN=15.8V 0.00 ‐20 0 20 40 60 AMBIENT  TEMPERATURE Ta(deg) 4 80 80 70 14.0 14.5 15.0 15.5 SUPPLY  VOLTAGE  VD(V) 16.0 HYBRID IC VLA567-11R DRIVER FOR IGBT MODULES DEFFINITION OF CHARACTERISTICS (1)SWITCHING OPERATION (2)OPERATION OF SHORT CIRCUIT PROTECTION VI VI VO tr tf 0V VO 0V -5V 90% ttrip1,2 50% ttimer Fo 10V 10% 10V 0V tPHL tPLH APPLICATION EXAMPLE 4.7kohm PC1 P 29 4.7kohm 23 VIN : 5V D1 RG1 26 40 Gate signal 1 25 41 HC04 etc. GND + 28 42 + C2 44 DZ2,3 C1 DZ1 IGBT module 27 VD : 15V Ctrip1 Cs1 24 30 43 1 VLA567‐01R D2 22 RG2 4 5 Gate signal 2 HC04 etc. 19 20 + 17 GND C4 DZ5,6 C3 + DZ4 18 N Ctrip2 Cs2 21 15 4.7kohm 16 4.7kohm PRECAUTION PC2 (1) Voltage compensate capacitors are expected to be located as close as VD=15V +/-5% possible from the hybrid IC. VIN= 5V +/-5% (2) D1 requires approximately the same voltage of power modules. C1 ~ 4=100μF 50V(Low impedance) Ctrip1,2 : Depended on RG1,2 (3) If reverse recovery time of D1 (D2) is long, pin23 (pin22) is applied high voltage. (Please refer to the In that case, counterplan for protection which insert zener diode between “ ttrip-Ctrip CHARACTERISTICS “ in page3) pin 18 and 22 (pin 27 and 23) is necessary like above diagram. Cs1,2 : Please refer to the (4) In case pin 21 or 24 are operating, the Ctrip is expected to be wired as close as “ ts-Cs CHARACTERISTICS “ in page6) possible from pin. (Less than 5cm coming and going) Z1,4 : 30V ※In case of not operating, please pin 21 or 24 are open. DZ2,3,5,6 : 18V (5) Minimize the area of closed circuit of gate circuit and input gate signal circuit D1,2 : First recovery diode( trr : 0.2μs max ) so as not to be affected by induction noise. RP1H(Sanken) etc. (6) When the built in short-circuit protection circuit need not be used, PC1,2:TLP785(TOSHIBA) etc. please connect resistance of 4.7k ohm between pin 17 and 22 (pin 23 and 28). At that time, D1 (D2) and Dz1 (DZ4) are not require, and pin 16 and 29 are not necessary to be connected. (7) Pin 1 and 42 are for test pin, so pin 1 and 42 are not to be connected electrically to other line. 5 HYBRID IC VLA567-11R DRIVER FOR IGBT MODULES OPERATION OF PROTECTION CIRCUIT ADJUSTMENT OF OUTPUT FALL TIME (1) In case the gate voltage is “H” and the collector voltage is high, (When the protection circuit is operating) this hybrid IC will recognize the circuit as short circuit and In case you want to decrease the speed of reverse bias immediately reduce the gate voltage. Besides, put out when the protection circuit is operating, you can adjust that error signal (”L”) which inform that protection circuit is operating speed by connecting the capacitor (Cs) between pin 15 and at the same time from pin 29 or 16. 18(27 and 30). (2) The protection circuit reset and resort to ordinary condition if input signal is “OFF” when the premised 1~2msec passed. ( “OFF” period needs 10us or more ) (3) When the output rises, the controlled time detect short circuit (ttrip) is set up so that on-time of IGBT can be secured properly. It is possible to adjust that time by connecting the capacitor (Ctrip) between pin17 and 21 (28 and 24). (4) When the short circuit protection works, the soft gate shut down circuit works to suppress collector surge voltage of IGBT. Furthermore, when it is necessary to be more soft, by adding a capacitor to Cs terminal, it is possible to make gate shut down speed more slow. OPERATION FLOW ON DETECTING SHORT CIRCUIT START ts‐Cs  CHARACTERISTICS (TYPICAL) DETECTION OF SHORT CIRCUIT GATE SHUTDOWN CIRCUIT OPERATE TIMER START OUTPUT FAULT SIGN END OF TIMER 1~2ms NO FALL TIME ON ACTIVITY OF SHORT PROTECTION ts (us) 70 60 50 40 30 20 10 0 0 YES INPUT SIGN IS NO “OFF” YES RESET Note : “L” output voltage(VOL) with protection circuit operating is about VEE +2V. 6 100 200 300 400 500 CONNECTIVE  CAPACITANCE  Cs(pF) Pin:15‐18(27‐30) 600 HYBRID IC VLA567-11R DRIVER FOR IGBT MODULES VCE The monitor  terminal of  collector voltage The start of a  short ‐circuit  current  Vsc Detection  (VCE became  large) 22 (or 23pin) Driver Hybrid‐IC (VLA567 ‐11R) VCE 19 (or 26pin) VGE 17 (or 28pin ) 7 IC VGE In order to reduce a  collector's surge voltage,  gate interception is  carried out soft. HYBRID IC VLA567-11R DRIVER FOR IGBT MODULES FOR SAFETY USING Great detail and careful attention are given to the production activity of Hics, such as the development, the quality of production, and in it’s reliability. However the reliability of Hics depends not only on their own factors but also in their condition of usage. When handling Hics, please note the following cautions. CAUTIONS Packing The materials used in packing Hics can only withstand normal external conditions. When exposed to outside shocks, rain and certain environmental contaminators, the packing materials will deteriorates. Please take care in handling. Carrying Storage 1) Don’t stack boxes too high. Avoid placing heavy materials on boxes. 2) Boxes must be positioned correctly during transportation to avoid breakage. 3) Don't throw or drop boxes. 4) Keep boxes dry. Avoid rain or snow. 5) Minimal vibration and shock during transportation is desirable. When storing Hics, please observe the following notices or possible deterioration of their electrical characteristics, risk of solder ability, and external damage may occur. 1) Devices must be stored where fluctuation of temperature and humidity is minimal, and must not be exposed to direct sunlight. Store at the normal temperature of 5 to 30 degrees Celsius with humidity at 40 to 60%. 2) Extended storage Avoid locations where corrosive gasses are generated or where much dust accumulates. 3) Storage cases must be static proof. 4) Avoid putting weight on boxes. When extended storage is necessary, Hics must be kept non-processed. When using Hics which have been stored for more than one year or under severe conditions, be sure to check that the exterior is free from flaw and other damages. Maximum ratings To prevent any electrical damages, use Hics within the maximum ratings. The temperature, current, voltage, etc. must not exceed these conditions. Polarity To protect Hics from destruction and deterioration due to wrong insertion, make sure of polarity in inserting leads into the board holes, conforming to the external view for the terminal arrangement. 8 HYBRID IC VLA567-11R DRIVER FOR IGBT MODULES Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary circuits, (2) use of non-flammable material or (3) prevention against any malfunction or mishap. Notes regarding these materials ·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging to ISAHAYA or a third party. ·ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights, originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. ·All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. ·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. ·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. ·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. 9
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