2SP0430T2A0C-FF1800R12IE5 数据手册
SCALE-2™ Family
2SP0430T
Datasheet
Gate Driver for 1.2 kV and 1.7 kV PrimePACK™ 3+ Power Modules
Supporting 2-level and 3-level NPC-1 Applications
Product Highlights
Applications
Highly Integrated, Compact Footprint
• Traction inverter
• Ready-to-use gate driver solution for PrimePACK™ 3+ IGBT
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power modules with 1200 V and 1700 V blocking voltage
Dual channel gate driver
Electrical primary-side interface with reinforced isolation
Available for 2-level and 3-level NPC-1 applications
±30 A peak output gate current
2 W output power per channel at maximum ambient
temperature
-40 °C to +85 °C operating ambient temperature
Protection and Safety Features
• Reinforced insulation between primary and secondary side
• Undervoltage lock-out (UVLO) protection for primary-side
(low voltage side) and secondary-side (high voltage side)
• Short-circuit protection
• Dynamic Advanced Active Clamping (DA²C)
• Wind and solar power
• Industrial drives
• Other industrial applications
Description
The plug-and-play 2SP0430T gate driver family is
optimized for operation of 1200 V and 1700 V
PrimePACK™ 3+ IGBT power modules in 2-level and
3-level NPC-1 applications.
The gate driver features an electrical interface with 15 V logic
and built-in DC/DC power supply.
Power Integrations’ Dynamic Advanced Active Clamping
allows an extended DC-link voltage range in IGBT off-state
for up to 60 s in solar and regenerating applications (e.g.
traction).
• Applied double sided conformal coating
Full Safety and Regulatory Compliance
• 100% production partial discharge and HIPOT test according to
• A version: EN 50178:1997
• B version: IEC 62109:2010
• Clearance and creepage distances requirements between
primary and secondary sides according to
• A version: IEC 62497-1:2013 and EN 50178:1997
• B version: IEC 62109-1:2010
• Clearance and creepage distances requirements between
both secondary sides according to
• A version: EN 50178:1997
• B version: IEC 62109-1:2010
A version
B version
Figure 1. 2SP0430T Versions with Standard (A version, left) and Increased (B version, right) Isolation Test Voltage.
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This Product is Covered by Patents and/or Pending Patent Applications.
October 2018
2SP0430T
Product Portfolio 2SP0430T
Product
Power Module
Technology
Voltage
Class
Current
Class
Package
Power Module
Supplier
2SP0430T2A0C-FF1500R12IE5
Si-IGBT, Si-Diode
1200 V
1500 A
PrimePACK™ 3+
Infineon
2SP0430T2B0C-FF1500R12IE5
Si-IGBT, Si-Diode
1200 V
1500 A
PrimePACK™ 3+
Infineon
2SP0430T2A0C-FF1800R12IE5
Si-IGBT, Si-Diode
1200 V
1800 A
PrimePACK™ 3+
Infineon
2SP0430T2B0C-FF1800R12IE5
Si-IGBT, Si-Diode
1200 V
1800 A
PrimePACK™ 3+
Infineon
2SP0430T2A0C-FF1500R17IP5
Si-IGBT, Si-Diode
1700 V
1500 A
PrimePACK™ 3+
Infineon
2SP0430T2B0C-FF1500R17IP5
Si-IGBT, Si-Diode
1700 V
1500 A
PrimePACK™ 3+
Infineon
2SP0430T2A0C-FF1800R17IP5
Si-IGBT, Si-Diode
1700 V
1800 A
PrimePACK™ 3+
Infineon
2SP0430T2B0C-FF1800R17IP5
Si-IGBT, Si-Diode
1700 V
1800 A
PrimePACK™ 3+
Infineon
Table 1.
Portfolio 2SP0430T.
Notes:
2
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2SP0430T
Interface Description
Figure 2.
Interface.
Connector X1
To external system controller (DIC-20 connector).
VDC (Pin 1, 3):
These pins are the primary-side 15 V supply voltage
connection for the integrated DC/DC converter. It is
mandatory to use the same supply for VDC and VCC.
SO1 (Pin 13):
This pin is the status output for channel 1 (low-side switch).
IN1 (Pin 15):
This pin is the command input for channel 1 (low-side switch).
NC (Pins 17, 19):
These pins are electrically not connected.
VCC (Pin 5, 7):
These pins are the primary-side 15 V supply voltage
connection for the primary-side electronic. It is mandatory to
use the same supply for VDC and VCC.
GND (Pin 2, 4, 6, 8, 10, 12, 14, 16, 18, 20):
These pins are the connection for the primary-side ground
potential. All primary-side signals refer to these pins.
SO2 (Pin 9):
This pin is the status output for channel 2 (high-side switch).
Optical Indicator
IN2 (Pin 11):
This pin is the command input for channel 2 (high-side
switch).
P
White optical indicator for monitoring the voltage VVCC. During
the absence of VVCC the indicator is OFF.
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2SP0430T
2SP0430T Functional Description
of the gate driver. It is mandatory to provide the supply for
VDC and VCC from the same source.
Under Voltage Monitoring
The supply voltages are closely monitored. In case of an
under voltage condition (UVLO) a failure signal will be
provided on the status output of the gate driver. If the
UVLO is present on the primary-side supply VVCC, both
status output signals will be set to GND and all gate driver
channels will be turned-off synchronously. In case of an
UVLO on the secondary-side, the status signal of the
respective channel will be set to GND and the
corresponding power semiconductor will be turned-off.
Inputs (Primary-Side X1)
The input logic of IN1 and IN2 is designed to work with
15 V logic levels to provide sufficient signal/noise ratio.
Both inputs have positive logic and are edge triggered.
Gate driver signals are transferred from the IN1 and IN2
pins to the corresponding gate with a propagation delay of
tP(LH) for the turn-on and tP(HL) for the turn-off commands.
Outputs (Primary-Side X1)
Figure 3.
Functional Block Diagram.
The 2SP0430T is a dual channel plug-and-play gate driver
for PrimePACK™ 3+ power modules. The gate driver is
available in different variants, which all provide reinforced
isolation for all primary-side signals:
2SP0430T2A0 for PrimePACK™ 3+ power modules.
This variant features an isolation rating between
primary-side and secondary-side of 5000 VRMS.
2SP0430T2B0 for PrimePACK™ 3+ power modules.
This variant features an isolation rating between
primary-side and secondary-side of 9100 VRMS.
As plug-and-play gate driver the 2SP0430T characteristics
match the requirements of the individual power modules.
The operation of the channel 1 (low-side switch) and
channel 2 (high-side switch) of the gate driver is
independent from each other. Any dead time insertion, to
avoid synchronous or overlapping switching of the driven
power switches, has to be generated in the external
system controller.
Note: Synchronous or overlapping switching of top
and bottom switches within a half-bridge leg may damage
or destroy the driven power switche(s) and in conjunction
as secondary failure the attached gate driver.
Power Supplies
The 2SP0430T provides two power supply inputs. For both
a typical supply voltage level of 15 V is required. The first
input VDC supplies the integrated DC/DC converter, which
generates the isolated voltage for the secondary-side gate
driver channels. The positive rail of the gate driver
channels has the voltage level VVISOx and the negative rail
the voltage level VCOMx. Both are referenced to the emitter
potential at terminal E1 or E2 of the driven power
semiconductor.
The second input VCC supplies the primary-side electronic
The gate driver provides a status feedback SOx at pins 9
and 13. The status feedback signal stays at VVCC under nofault condition. In case of a fault, e.g. detected shortcircuit of the driven power module or an under voltage
lock-out (UVLO) condition on the secondary-side, the
status feedback is set to GND potential for a duration of
tblk. In case of a primary-side UVLO condition both status
feedback signals remain at GND during the UVLO and are
extended by tblk. During this time no gate signals will be
transmitted to the respective gate driver channel.
Screw Terminals
The gate driver is mounted on top of the power module
and fixed by screws. Details are given in the section
Mounting Instruction.
Gate Voltage
2SP0430T possesses a voltage regulator for the positive (turnon) rail of the gate voltage. Internal current sources are
regulating actively the positive gate-emitter voltage
independently of actual load conditions within the maximum
specified ratings. Therefore, the on-state gate-emitter voltage
of the power semiconductor equals in steady state the positive
supply voltage VVISO.
The off-state gate-emitter voltage VGE(off) equals in steady state
the voltage VCOM. This voltage is load dependent. It has its
lowest value under no load conditions and is increasing slightly
(i.e. getting less negative) with increasing load.
In the event of an under voltage lock-out condition the gate
driver changes the control of the positive rail towards control
of the negative rail VCOM. By this potential parasitic turn-on
events of the power semiconductor are avoided.
Short-Circuit Protection
The gate driver uses the semiconductor desaturation effect
to detect short-circuits. The desaturation is monitored by
using a resistor sensing network. The collector-emitter
voltage is checked after the response time tres at turn-on to
detect a short circuit. If the voltage is higher than the
programmed threshold voltage VCE(stat), the driver detects a
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2SP0430T
short-circuit condition. The monitored semiconductor is
switched off immediately and a fault signal is transmitted
to the primary-side status output SOx (pin 9 and/or pin 13)
after a delay tSOx.
The fault feedback is automatically reset after the blocking
time tblk. The semiconductor is turned-on again as soon as
the next positive edge is applied to the respective inputs
IN1 or IN2 after the fault status has disappeared.
It should be noted that the response time tres is dependent
on the DC-link voltage. It remains constant over a wide
range of the higher DC-link voltage range and increases at
lower DC-link voltages.
predefined threshold. The IGBT is then kept in linear
operation. Basic active clamping topologies implement a single
feedback path from the IGBT’s collector through transient
voltage suppressor (TVS) diodes to the IGBT gate. The
2SP0430T gate driver contains Power Integrations’ Dynamic
Advanced Active Clamping (DA²C) based on this principle:
When active clamping is activated, the turn-off MOSFET of
the gate driver is switched off in order to improve the
effectiveness of the active clamping and to reduce the
losses in the TVS diodes. This feature – called Advanced
Active Clamping – is mainly integrated in the secondaryside ASIC of the gate driver.
Additional TVS diodes have been added in series to the TVS
diodes required to withstand the maximum DC-link voltage
under switching operation. These TVS diodes are shortcircuited during the IGBT on state as well as for about
15…20µs after the turn-off command to guarantee efficient
active clamping. After this delay, these additional TVS diodes
are activated and allow the DC-link voltage to be increased to
a higher value during the IGBT off-state. This feature –
together with Advanced Active Clamping – is called Dynamic
Advanced Active Clamping (DA²C). Note that the time during
which the voltage can be applied above the value for switching
operation should be limited to short periods (
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