IGD616IC1

IGD616 Preliminary Data Sheet IGD616 Single Channel SCALE IGBT Driver Core A successor to the IGD608/615 single-channel gate driver cores for 1200V and 1700V IGBTs The IGD616 is a highly-integrated single IGBT driver core based on CONCEPT's proprietary SCALE technology which has been established on the market as an industrial standard since 1999. The IGD616 has been developed for direct replacement of IGD608 and IGD615. It features a dedicated set of compatible items to ease seamless transition in existing designs. Its drive power and performance exceed prior specifications such that now one single driver core IGD616 will cover the range of both IGD608 and IGD615 at a superior reliability level. The driver core is optimized to match various IGBTs and applications from 100A / 1200V to 1000A / 1700V and beyond. Features [ [ [ [ [ [ [ [ [ [ [ Applications Direct replacement of IGD615 [ Driving 1200V and 1700V IGBTs Highly approved SCALE technology [ Switching DC to 150 kHz Non-inverting or optionally inverting inputs [ Duty cycle 0 ... 100% Gate drive capability 16A, 6W [ Operating temp. -40 ... +85 °C Typical delay time of 315ns [ Two-level topologies Power supply voltage monitoring set to 11.5V [ AC drives, SMPS, etc. Superior EMC (dv/dt > 100V/ns, ESD > 2kV) [ Industry, traction, wind power Highly flexible single-channel design Command signal transmitted via transformer interface Fault signal via transformer interface or optional optocoupler 22ms blocking time at fault with custom-specific time options IGBT-Driver.com Page 1 IGD616 Preliminary Data Sheet Compatibility to IGD608 / IGD615 Gate Drivers The IGD616 is available with different options covering a dedicated set of compatible items. In this data sheet, the text referring to critical compatible items is underlined. Option N and Option I select between non-inverting and inverting inputs respectively. It is no longer possible to interchange the IN+ and IN- inputs to invert the logic. On the secondary side, any fault state is extended by a period known as the command blocking time. During this time, the driver is kept in the off-state. The command blocking time is set at the factory to a nominal value of 22ms. Other values upon request. It is no longer possible for the application to adjust the blocking time. For option T, the signal transformer interface is used to transfer the secondary fault signal to the primary side. This transfer may be performed at each change in the command signal, but only during the blocking time. For option C, an optocoupler is used to transfer the secondary-side fault state to the primary side within a delay of less than several microseconds. The initial creepage distance and the maximum operating voltage are reduced by the optocoupler. For a summary, refer to the Ordering Information section on the last page. Page 2 CT-Concept.com IGD616 Preliminary Data Sheet Block Diagram of IGD616 Option T Not for version "I" IN+ IGD 001 18 Not for version "N" IN- Supply voltage monitoring 17 19 ME Vce monitoring 21 Ref LDI 001 Control logic SO+ 15 SO- 16 VCC 10 GND 9 GND 4 GND 3 GND 2 GND 1 Fig. 1 Pulse transceiver Pulse transceiver DC/DC converter control Control logic Driver 25 G 22 E 20 N.C. 23 Cs 24 COM 30 res. IGD616NT / IGD616IT Block diagram of the IGD616 (option T, i.e. fault signal via signal transformer interface). Non-inverting inputs (option N) or inverting inputs (option I). Not connected pins are designated as N.C. IGBT-Driver.com Page 3 IGD616 Preliminary Data Sheet Block Diagram of IGD616 Option C Not for version "I" IN+ IGD 001 18 Not for version "N" IN- Supply voltage monitoring 17 19 ME Vce monitoring 21 Ref LDI 001 Control logic SO+ 15 SO- 16 VCC 10 GND 9 GND 4 GND 3 GND 2 GND 1 Fig. 2 Page 4 Pulse transceiver Pulse transceiver DC/DC converter control Control logic Driver 25 G 22 E 20 N.C. 23 Cs 24 COM 30 res. IGD616NC / IGD616IC Block diagram of the IGD616 (option C, i.e. fault signal via optocoupler). Non-inverting inputs (option N) or inverting inputs (option I). Not connected pins are designated as N.C. CT-Concept.com IGD616 Preliminary Data Sheet Pin Description No. 1-16 1- 4 5- 8 9 10 11-14 15 16 17 18 19-36 19 20 21 22 23 24 25 26-29 30-36 Pin Name GND GND VCC SO+ SOININ+ ME N.C. REF E Cs COM G N.C. Function Primary-side terminal Power supply and logic ground Physically not present Power supply and logic ground Power supply positive voltage referenced to pin GND Physically not present Status output positive voltage referenced to pin SOStatus output negative voltage referenced to pin SO+ For option I: Inverting input referenced to GND For option N: Functionless CMOS input (must be terminated to logic high or logic low) For option I: Functionless CMOS input (must be terminated to logic high or logic low) For option N: Non-inverting input referenced to GND Secondary-side terminal IGBT collector voltage monitoring input referenced to pin E Not connected / reserved for future use Reference voltage for short-circuit monitoring referenced to pin E IGBT emitter terminal 16.4V nominal voltage power supply referenced to pin COM Common terminal (secondary side ground) Gate driver output Physically not present Not connected / reserved for future use Not connected pins are designated as N.C. IGBT-Driver.com Page 5 IGD616 Preliminary Data Sheet Mechanical Data Fig. 3 Page 6 Footprint of IGD616. Grid is 1.27mm (50mil). Recommended diameter of solder pad is 1.6mm. Recommended diameter of drill holes is 1.0mm. Height X = 18.5mm +/- 0.5mm for option T. Height X = 20.5mm +/- 0.5mm for option C. CT-Concept.com IGD616 Preliminary Data Sheet Absolute Maximum Ratings Parameter Condition/remark Primary supply voltage VCC Pin G IGBT gate pulse current Maximum Pulse Gate Charge Qg To GND Max. Units 0 -16.0 without external Capacitors (note 9) external Capacitors < 100μF (notes 2, 9) IGBT average gate power Primary supply current IGBT switching frequency Continuous, after startup sequence see diagram 160 Rg = 12Ω 150 Maximum Switching Frequency [kHz] Min. 16 +16.0 5.1 55 6.0 550 150 V A μC μC W mA kHz VCC VCC VCC 85 90 260 V V V °C °C °C Parameter Rg: Total External Gate Resistance 140 Rg = 6Ω 130 120 110 100 Rg = 3.1Ω 90 80 70 Rg = 2.4Ω 60 50 40 Rg = 1.7Ω 30 20 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Gate Charge [uC] Fig. 4 Maximum allowed switching frequency vs. total gate charge Parameter Rg (total external gate resistance); unforced convection (cooling in free air) Pin IN voltage Pin SO voltage Pins REF, ME voltages Operating ambient temperature Storage ambient temperature Lead temperature To COM Continuous Soldering, 5 seconds 0 0 0 -40 -45 Unless otherwise specified, all data refer to a primary supply voltage of 15V and an ambient temperature of +85°C. IGBT-Driver.com Page 7 IGD616 Preliminary Data Sheet Recommended Operating Conditions Parameter Condition/remark Primary supply voltage VCC Duty cycle Total external gate resistance To GND Min. 14 0 1.7 (Note 3) Max. Units 16 1 V Ω Electrical Characteristics Unless otherwise specified, all data refer to a primary supply voltage of 15V and an ambient temperature of +25°C. Minimum and maximum values refer to the specified maximum rated operating range at ambient temperature. Power supply Condition/remark Primary supply current Without gate load Secondary supply voltage V(Cs, COM) Turn-on gate-to-emitter voltage Turn-off gate-to-emitter voltage Power supply monitoring Condition/remark Secondary supply |V(G, E)| Clear fault state (note 1) Set fault state Hysteresis Short-circuit monitoring Condition/remark Pin Pin Pin Pin Pin Pin Pin REF pull-up resistor to pin Cs REF source current ME pull-up resistor to pin Cs ME on-state source current ME off-state sink current ME off-state resistance REF on-state reference voltage Page 8 From Cs (note 5) (Note 5) From Cs (note 5) Towards COM Towards COM Functional limits (note 5) Min. Typ. Max. Units 15.6 14.0 -14.0 55 16.4 15.1 -15.1 mA V V V Min. Typ. Max. Units 11.5 10.8 0.7 V V V Min. Typ. Max. Units 1425 1500 150 2200 1.4 1575 2090 16.8 15.95 -15.95 2310 80 2.5 125 12.5 Ω μA Ω mA mA Ω V CT-Concept.com IGD616 Preliminary Data Sheet Command blocking When a fault state has been cleared, the next turn-on commands are ignored by the ASIC during the command blocking time to avoid thermal overload of the power MOSFET or IGBT driven by the gate driver. Condition/Remark Command blocking time Factory-set (other values upon request) Pin IN Command Inputs Condition/Remark Logic level Positive-going threshold Negative-going threshold Max. Units Min. Typ. 17 22 Min. Typ. Max. Units 10 5 V V mA pF Bias sink current Pin capacitance 27 1 3 ms Pin SO Status Outputs Secondary-side faults cause the channel to turn off immediately. Fault states are transmitted to the primary side via the signal transformer interface (option T) or via an optocoupler (option C), in the latter case with an additional delay. Secondary-side faults are then reported at Pin SO. Condition/Remark Available current at pins SO Delay to report a fault state Typ. Max. Units [V(VCC) – 1.2V] > V(SO+) > V(SO-) Fault state 1 μA Otherwise 1000 μA Option T: during command blocking time Until next change at IN* Option C 20 μs Timing Characteristics Condition/Remark Equiv. delay time (note 4) IGBT IGBT IGBT IGBT IGBT IGBT Equiv. rise time (note 4) Equiv. fall time (note 4) Min. Min. turn-on, option N turn-off, option N turn-on, option I turn-off, option I turn-on turn-off Typ. Max. Units 300 350 315 365 100 80 ns ns ns ns ns ns Data refer to a gate charge of 1.2μC and a total external gate resistance of 5.6Ω. IGBT-Driver.com Page 9 IGD616 Preliminary Data Sheet Electrical Insulation Condition/Remark Operating voltage For option C; continuous (note 6) Permitted d/dt (VC*E* ) Test voltage Partial discharge extinction volt. Creep path primary-secondary For option T; continuous (note 6) Creep path secondary-secondary Min. Typ. 600 Ensured by design 50 Hz/1 min (note 7) To IEC270 (note 8) Option T Option C 100 1700 19 8 19 Max. Units 1500 1000 VDC VDC V/ns 4000 VAC, eff VAC, pk mm mm mm Footnotes 1) 2) 3) 4) 5) 6) 7) The unipolar primary supply voltage with a nominal value of V(VCC, GND) = 15.0V is multiplied by a magnetic transformer, resulting in a unipolar secondary power supply voltage with a nominal value of V(Cs, COM) = 16.4V. To provide a bipolar gate-driving voltage with the nominal values of V(G, E) = +15.1V for turn-on and V(G, E) = - 15.1V for turn-off, both gate and emitter are switched in full-bridge configuration via biploar junction transistors (providing a total nominal level shift of 1.3V). The primary side is equipped with an automatic power-on reset which clears the fault memories when the supply voltage approaches a specified limit with a maximum value of 13.5V. In typical applications (hard-switching topology using recommended gate resistors and gate charge) the switching frequency is primarily limited by the switching losses of the IGBT module or by the gate power due to the gate charge required by the module. The switching losses of the gate driver depend strongly on the particular operating conditions and increase with reducing the gate resistance and increasing switching frequency. For switching frequencies beyond 20kHz or gate pulse charges > 5.1μC, the thermal limits of the gate driver may be exceeded. A derating of the IGBT’s average gate power is required under these estimated exemplary conditions. Conditions other than those specified may affect the reliability or lead to thermal breakdown of the gate drivers. Please ask our support team for a specific estimation. As a rule, the case temperature of any component of the gate driver should stay below 65°C for an ambient temperature of 25°C. The total external gate resistance is the sum of the IGBT-internal chip resistances and the externally used gate resistors. Note that the driver-internal minimum resistance is below 0.2Ω. Due to the finite slew rate of the driver output voltage and to parasitic inductances in the gate control loop, however, the resulting gate current may not approach the nominal maximum value of 16A. Equivalent delay, rise or fall times are derived from comparisons with the results obtained when modeling the driver as an ideal pulse-shaped voltage source with no delay and an infinite slew rate. At the REF pin, a 1.5 kΩ resistor is connected to the positive voltage terminal Cs of the secondaryside power supply in parallel with a nominal 150μA current source. The reference voltage may be set via an external Zener diode or an external resistor connected to pin E. Furthermore, at pin ME a 2.2 kΩ resistor is connected to Cs in parallel with a nominal 1.4mA current source. Maximum continuous, or repeatedly applied DC voltage or peak value of the repeatedly applied AC any primary-side pin and any secondary-side pin. voltage between Caution for option C: operating voltages exceeding 600V may degrade the long-term characteristics of the optocouplers, resulting in an increased delay or a reduced current capability at pin SO. The test voltage of 4000 Vac(rms)/50 Hz may be applied only one time and for one minute. It should be noted that with this (strictly speaking obsolete) test method, some (minor) damage Page 10 CT-Concept.com IGD616 Preliminary Data Sheet 8) 9) occurs to the insulation layers due to the partial discharge. Consequently, this test is not performed at CONCEPT as a series test. Where repeated insulation tests (e.g. module test, equipment test, system test) are run, the subsequent tests should be performed at a lower test voltage: the test voltage is reduced by 400 V for each additional test. The more modern if more elaborate partial-discharge measurement is preferable to such test methods as it is almost entirely non-destructive. The partial discharge test is performed for each driver within the scope of series production. This constitutes a high voltage testing rate of 100% in series production. The supported gate charge refers to the stability of the power supply voltages and to the dynamic voltage drop at the supply rail. Exceeding the maximum supported gate charge may lead to malfunction or thermal overload of the gate drivers. The customer may increase the specified maximum value of the supported gate charge by connecting additional supply capacitors between terminals Cs and COM up to a total of 100μF. External blocking capacitors must be applied for pulse gate charges >5.1μC. The capacitance rating must be greater or equal 2μF per 1μC gate pulse charge exceeding 5.1μC. Place the capacitors with short traces to the IGD616’s pins. Make sure to check your design for the thermal limits given in note 2. IGBT-Driver.com Page 11 IGD616 Preliminary Data Sheet Important Notice The data contained in this product data sheet is intended exclusively for technically trained staff. Handling all high-voltage equipment involves risk to life. Strict compliance with the respective safety regulations is mandatory! Any handling of electronic devices is subject to the general specifications for protecting electrostatic-sensitive devices according to international standard IEC 747-1, Chapter IX or European standard EN 100015 (i.e. the workplace, tools, etc. must comply with these standards). Otherwise, this product may be damaged. Disclaimer This data sheet specifies devices but cannot promise to deliver any specific characteristics. No warranty or guarantee is given – either expressly or implicitly – regarding delivery, performance or suitability. CT-Concept Technologie AG reserves the right to make modifications to its technical data and product specifications at any time without prior notice. The general terms and conditions of delivery of CT-Concept Technologie AG apply. Technical Support CONCEPT provides expert help for your questions and problems: Internet: www.IGBT-Driver.com/go/support Quality The obligation to high quality is one of the central features laid down in the mission statement of CT-Concept Technologie AG. The quality management system covers all stages of product development and production up to delivery. The drivers of the SCALE series are manufactured to the ISO 9001 standard. Page 12 CT-Concept.com IGD616 Preliminary Data Sheet Ordering Information Type designation N, C N, T I, C I, T Other Non-inverting, optocoupler-assisted driver for 1200V IGBTs Non-inverting driver for 1200V or 1700V IGBTs Inverting, optocoupler-assisted driver for 1200V IGBTs Inverting driver for 1200V or 1700V IGBTs IGD616NC1 IGD616NT1 IGD616IC1 IGD616IT1 Upon request Information about Other Products For other drivers and evaluation systems Internet: www.IGBT-Driver.com Manufacturer CT-Concept Technologie AG Intelligent Power Electronics Renferstrasse 15 CH-2504 Biel-Bienne Switzerland Tel. Fax +41 - 32 - 344 47 47 +41 - 32 - 344 47 40 E-mail Internet Info@IGBT-Driver.com www.IGBT-Driver.com © Copyright 1992…2008 by CT-Concept Technologie AG - Switzerland. We reserve the right to make any technical modifications without prior notice. IGBT-Driver.com All rights reserved. Version from 2008-04-17 Page 13