IHD660IC2

IHD260/660 Preliminary Data Sheet IHD 260/660 Dual Channel SCALE IGBT Driver Core A successor to the IHD 215/280/680 dual-gate driver cores for 1200V and 1700V IGBTs The IHD 260 and IHD 660 (short IHDx60) are highly-integrated dual IGBT driver cores based on CONCEPT's proprietary SCALE technology which has been established on the market as an industrial standard since 1999. As most customers apply the IHD 215, IHD 280 and IHD 680 drivers in a similar way, the IHDx60 covers a dedicated set of compatible items to give the benefits of optimum performance, optimum reliability and a competitive price. The driver cores are optimized to match various IGBTs and applications from 25A to 450A and 1200V to 1700V. Typical applications include half-bridge control of 1700V/75A IGBTs at switching frequencies up to 100kHz and 1700V/450A IGBTs at switching frequencies up to 18.5kHz for the IHD660 version. Features            Applications Direct replacement of IHD 215/280/680  Driving 1200V and 1700V IGBTs Highly approved SCALE technology  Switching DC to 100 kHz Non-inverting or optionally inverting inputs  Duty cycle 0 ... 100% Gate drive capability 6A, 1W or 3W each  Operating temp. -40 ... +85 °C Typical delay time of 315ns  Two-level topologies Power supply voltage monitoring set to 11.5V  AC drives, SMPS, etc. Superior EMC (dv/dt > 100V/ns, ESD > 2kV)  Industry, traction, wind power Direct driving of two independent driver channels Command signal transmitted via transformer interface Fault signal via transformer interface or optional optocoupler 25ms blocking time at fault with custom-specific time options IGBT-Driver.com Page 1 IHD 260/660 Preliminary Data Sheet Compatibility to IHD 215/280/680 Gate Drivers The IHDx60 are available with different options covering a dedicated set of compatible items. In this data sheet, the text referring to critical compatible items is underlined. Option N and Option I select between non-inverting and inverting inputs respectively. It is no longer possible to interchange the IN+ and IN- inputs to invert the logic as could be done with IHD 215/280/680. On the secondary side, any fault state is extended by a period known as the command blocking time. During this time, the driver is kept in the off-state. The command blocking time is set at the factory to a nominal value of 25ms. Other values upon request. It is no longer possible for the application to adjust the blocking time. For option T, the signal transformer interface is used to transfer the secondary fault signal to the primary side. This transfer may be performed at each change in the command signal, but only during the blocking time. For option C, an optocoupler is used to transfer the secondary-side fault state to the primary side within a delay of less than several microseconds. The initial creepage distance and the maximum operating voltage are reduced by the optocoupler. For a summary, refer to the Ordering Information section on the last page. Page 2 CT-Concept.com IHD260/660 Preliminary Data Sheet Block Diagram of IHDx60 Option T Not for version "I" Not for version "N" IN2- 17 Control logic Channel 2 IGD 001 IN2+ 18 Pulse transceiver Supply voltage monitoring Vce monitoring Pulse transceiver Control logic 19 ME2 21 Ref2 Driver SO2+ 15 G2 22 E2 20 N.C. SO2- 16 Not for version "I" IN1+ 4 Not for version "N" Control logic Pulse transceiver Channel 1 IGD 001 LDI 001 IN1- 3 Supply voltage monitoring Vce monitoring Pulse transceiver Control logic 30 ME1 32 Ref1 Driver SO1+ 1 36 G1 33 E1 31 N.C. SO1- 2 Primary Supply channel 2 VCC 10 23 Cs2 24 COM2 Dc/dc converter control 34 Cs1 35 COM1 GND 9 IHx60NT / IHx60IT Fig. 1 25 Supply channel 1 Block diagram of the IHDx60 (option T, i.e. fault signal via signal transformer interface). Non-inverting inputs (option N) or inverting inputs (option I). Not connected pins are designated as N.C. IGBT-Driver.com Page 3 IHD 260/660 Preliminary Data Sheet Block Diagram of IHDx60 Option C Not for version "I" Not for version "N" Supply voltage monitoring IN2- 17 Control logic Channel 2 IGD 001 IN2+ 18 Pulse transceiver Pulse transceiver 19 ME2 Vce monitoring Control logic 21 Ref2 Driver SO2+ 15 25 G2 22 E2 20 N.C. SO2- 16 Not for version "I" IN1+ 4 Not for version "N" Supply voltage monitoring IN1- 3 Control logic Pulse transceiver Channel 1 IGD 001 LDI 001 Pulse transceiver 30 ME1 Vce monitoring Control logic 32 Ref1 Driver SO1+ 1 Primary 33 E1 Supply channel 2 VCC 10 23 Cs2 24 COM2 Dc/dc converter control 34 Cs1 35 COM1 GND 9 IHDx60NC / IHDx60IC Page 4 G1 31 N.C. SO1- 2 Fig. 2 36 Supply channel 1 Block diagram of the IHDx60 (option C, i.e. fault signal via optocoupler). Non-inverting inputs (option N) or inverting inputs (option I). Not connected pins are designated as N.C. CT-Concept.com IHD260/660 Preliminary Data Sheet Pin Description No. Pin Name 1-18 1 2 3 Primary-side terminal SO1+ Status output positive voltage referenced to pin SO1- for channel 1 SO1- Status output negative voltage referenced to pin SO1+ for channel 1 IN1For option I: Inverting input referenced to GND for channel 1 For option N: Functionless CMOS input (must be terminated to logic high or logic low) IN1+ For option N: Non-inverting input referenced to GND for channel 1 For option I: Functionless CMOS input (must be terminated to logic high or logic low) 4 Function 5-8 9 10 11-14 free GND VCC free 15 16 17 SO2+ Status output positive voltage referenced to pin SO1- for channel 2 SO2- Status output negative voltage referenced to pin SO1+ for channel 2 IN1For option I: Inverting input referenced to GND for channel 2 For option N: Functionless CMOS input (must be terminated to logic high or logic low) IN1+ For option N: Non-inverting input referenced to GND for channel 2 For option I: Functionless CMOS input (must be terminated to logic high or logic low) 18 Not physically present Power supply and logic ground Power supply positive voltage referenced to pin GND Not physically present 36-19 36 35 34 33 32 31 30 Secondary-side terminal G1 Gate driver output for channel 1 COM1 Common terminal for channel 1 Cs1 16.4V nominal voltage power supply referenced to pin COM1 E1 IGBT emitter channel 1 terminal REF1 Reference voltage for short-circuit monitoring referenced to pin E1 for channel 1 The command blocking time at fault is set at the factory; options upon request N.C. ME1 IGBT collector voltage monitoring input referenced to pin E1 for channel 1 29-26 free Not physically present 25 24 23 22 21 20 19 G2 COM2 Cs2 E2 REF2 N.C. ME2 Gate driver output for channel 2 Common terminal for channel 2 16.4V nominal voltage power supply referenced to pin COM2 IGBT emitter channel 2 terminal Reference voltage for short-circuit monitoring referenced to pin E2 for channel 2 The command blocking time at fault is set at the factory; options upon request IGBT collector voltage monitoring input referenced to pin E2 for channel 2 Not connected pins are designated as N.C. IGBT-Driver.com Page 5 IHD 260/660 Preliminary Data Sheet Mechanical Data Fig. 3 Page 6 Footprint of IHDX60. Grid is 1.27mm (50mil). Recommended diameter of solder pad is 1.6mm. Recommended diameter of drill holes is 1.0mm. Height X = 18.5mm +/- 0.5mm for option T. Height X = 20.5mm +/- 0.5mm for option C. CT-Concept.com IHD260/660 Preliminary Data Sheet Absolute Maximum Ratings Parameter Condition/remark Primary supply voltage VCC Pin G* IGBT gate pulse current IGBT average gate power IHD260 IGBT average gate power IHD660 Primary supply current IHD260 Primary supply current IHD660 Pin IN* voltage Pin SO* voltage Pins REF*, ME* voltages Operating ambient temperature Storage ambient temperature Lead temperature To GND Min. 0 -6.0 (Note 2) (Note 2, fig. 4) Continuous, after startup sequence Continuous, after startup sequence To respective COM* Continuous 0 0 0 -40 -45 Soldering, 5 seconds Max. Units 16 +6.0 1.0 3.0 200 500 VCC VCC VCC 85 90 260 V A W W mA mA V V V °C °C °C Unless otherwise specified, all data refer to a primary supply voltage of 15V and an ambient temperature of +25°C. Recommended Operating Conditions Parameter Condition/remark Primary supply voltage VCC Duty cycle Total external gate resistance To GND IGBT-Driver.com (Note 3) Min. 14 0 4.7 Max. Units 16 1 V Ω Page 7 IHD 260/660 Preliminary Data Sheet 90 Rg=2.4ohm 80 Rg=4.3ohm Rg=6.2ohm 70 max. switching frequency [kHz] Rg=9.1ohm 60 50 40 30 20 10 0 0 1 2 3 4 5 6 gate charge [uC] Fig. 4 Derating curves valid for IHD660 at an ambient temperature of 85°C (no derating for IHD260) Electrical Characteristics Unless otherwise specified, all data refer to a primary supply voltage of 15V and an ambient temperature of +25°C. Minimum and maximum values refer to the specified maximum rated operating range at ambient temperature. Power supply Condition/remark Primary supply current Without gate load Secondary supply voltage V(Cs, COM) Turn-on gate-to-emitter voltage Turn-off gate-to-emitter voltage Power supply monitoring Condition/remark Secondary supply |V(G, E)| Clear fault state (note 1) Set fault state Hysteresis Page 8 Min. Typ. Max. Units 15.6 14.0 -14.0 70 16.4 15.1 -15.1 mA V V V Min. Typ. Max. Units 11.5 10.8 0.7 V V V 16.8 15.95 -15.95 CT-Concept.com IHD260/660 Preliminary Data Sheet Short-circuit monitoring Condition/remark Pin Pin Pin Pin Pin Pin Pin From Cs (note 5) (Note 5) From Cs (note 5) Towards COM Towards COM Functional limits (note 5) REF pull-up resistor to pin Cs REF source current ME pull-up resistor to pin Cs ME on-state source current ME off-state sink current ME off-state resistance REF on-state reference voltage Min. Typ. Max. Units 1425 1500 150 2200 1.4 1575 2090 2310 80 125 12.5 2.5 Ω μA Ω mA mA Ω V Command blocking When a fault state has been cleared, the next turn-on commands are ignored by the ASIC during the command blocking time to avoid thermal overload of the power MOSFET or IGBT driven by the gate driver. Condition/Remark Command blocking time Factory-set (other values upon request) Pins IN* Command Inputs Condition/Remark Logic level Positive-going threshold Negative-going threshold Min. Typ. 17 22 Min. Typ. Max. Units 10 5 V V mA pF Bias sink current Pin capacitance Max. Units 27 1 3 ms Pin SO* Status Outputs Secondary-side faults cause the relevant channel to turn off immediately. Fault states are transmitted to the primary side via the signal transformer interface (option T) or via an optocoupler (option C), in the latter case with an additional delay. They are then reported at Pin SOA for channel A and at pin SOB for channel B. Condition/Remark Available current at pins SO Delay to report a fault state IGBT-Driver.com Min. Typ. Max. Units [V(VCC) – 1.2V] > V(SO+) > V(SO-) Fault state 1 μA Otherwise 1000 μA Option T: during command blocking time Until next change in relevant IN* Option C 20 μs Page 9 IHD 260/660 Preliminary Data Sheet Gate Driving Characteristics Condition/Remark Equiv. delay time (note 4) IGBT turn-on, option N IGBT turn-off, option N IGBT turn-on, option I IGBT turn-off, option I IGBT turn-on IGBT turn-off (Note 9) Equiv. rise time (note 4) Equiv. fall time (note 4) Supported gate charge Min. Typ. Max. Units 300 350 315 365 100 80 ns ns ns ns ns ns μC 5.4 Data refer to a gate charge of 1.2μC and a total external gate resistance of 5.6Ω. Electrical Insulation Condition/Remark Operating voltage For option C; continuous (note 6) Permitted d/dt V C*E* Test voltage Partial discharge extinction volt. Creep path primary-secondary For option T; continuous (note 6) Creep path secondary-secondary Page 10 Min. Typ. 100 V DC V DC V/ns 1700 19 8 19 4000 V AC, eff V AC, pk mm mm mm 600 Ensured by design 50 Hz/1 min (note 7) To IEC270 (note 8) Option T Option C Max. Units 1500 1000 CT-Concept.com IHD260/660 Preliminary Data Sheet Footnotes 1) 2) 3) 4) 5) 6) 7) 8) 9) The unipolar primary supply voltage with a nominal value of V(VCC, GND) = 15.0V is multiplied by a magnetic transformer, resulting in a unipolar secondary power supply voltage with a nominal value of V(Cs, COM) = 16.4V. To provide a bipolar gate-driving voltage with the nominal values of V(G, E) = +15.1V for turn-on and V(G, E) = - 15.1V for turn-off, both gate and emitter are switched in full-bridge configuration via biploar junction transistors (providing a total nominal level shift of 1.3V). The primary side is equipped with an automatic power-on reset which clears the fault memories when the supply voltage approaches a specified limit with a maximum value of 13.5V. In typical applications (hard-switching topology using recommended gate resistors and gate charge) the switching frequency is primarily limited by the switching losses of the IGBT module or by the gate power due to the gate charge required by the module. The switching losses of the gate driver depend strongly on the particular operating conditions and increase with reducing the gate resistance and increasing switching frequency. For switching frequencies beyond 10kHz or gate charges beyond 55μC, the thermal limits of the gate driver may be exceeded. A derating of the IGBT average gate power is required under these estimated exemplary conditions. Conditions other than those specified may affect the reliability or lead to thermal breakdown of the gate drivers. Please ask our support team for a specific estimation. As a rule, the case temperature of any component of the gate driver should stay below 65°C for an ambient temperature of 25°C. The total external gate resistance is the sum of the IGBT-internal chip resistances and the externally used gate resistors. Note that the driver-internal minimum resistance is below 0.2Ω. Due to the finite slew rate of the driver output voltage and to parasitic inductances in the gate control loop, however, the resulting gate current may not approach the nominal maximum value of 6.0A. Equivalent delay, rise or fall times are derived from comparisons with the results obtained when modeling the driver as an ideal pulse-shaped voltage source with no delay and an infinite slew rate. At the REF pin, a 1.5 kΩ resistor is connected to the positive voltage terminal Cs of the secondaryside power supply in parallel with a nominal 150μA current source. The reference voltage may be set via an external Zener diode or an external resistor connected to pin E. Furthermore, at pin ME a 2.2 kΩ resistor is connected to Cs in parallel with a nominal 1.4mA current source. This solution should be fully compatible with IHD series gate drivers in terms of function and parameters. Maximum continuous or repeatedly applied DC voltage or peak value of the repeatedly applied AC voltage between any primary-side pin and any secondary-side pin. Caution for option C: operating voltages exceeding 600V may degrade the long-term characteristics of the optocouplers, resulting in an increased delay or a reduced current capability at pins SO*. The test voltage of 4000 Vac(rms)/50 Hz may be applied only once during one minute. It should be noted that with this (strictly speaking obsolete) test method, some (minor) damage occurs to the insulation layers due to the partial discharge. Consequently, this test is not performed at CONCEPT as a series test. Where repeated insulation tests (e.g. module test, equipment test, system test) are run, the subsequent tests should be performed at a lower test voltage: the test voltage is reduced by 400 V for each additional test. The more modern if more elaborate partialdischarge measurement is preferable to such test methods as it is almost entirely non-destructive. The partial discharge test is performed for each driver within the scope of series production. The supported gate charge refers to the stability of the power supply voltages and to a dynamic voltage drop of 0.3V. Exceeding the maximum supported gate charge may lead to malfunction or thermal overload of the gate drivers. The customer may increase the specified maximum value of the supported gate charge by connecting additional supply capacitors between terminals Cs and COM up to a total of 47μF. Absolute gate charge must not exceed 55μC. IGBT-Driver.com Page 11 IHD 260/660 Preliminary Data Sheet Important Notice The data contained in this product data sheet is intended exclusively for technically trained staff. Handling all high-voltage equipment involves risk to life. Strict compliance with the respective safety regulations is mandatory! Any handling of electronic devices is subject to the general specifications for protecting electrostatic-sensitive devices according to international standard IEC 747-1, Chapter IX or European standard EN 100015 (i.e. the workplace, tools, etc. must comply with these standards). Otherwise, this product may be damaged. Disclaimer This data sheet specifies devices but cannot promise to deliver any specific characteristics. No warranty or guarantee is given – either expressly or implicitly – regarding delivery, performance or suitability. CT-Concept Technologie AG reserves the right to make modifications to its technical data and product specifications at any time without prior notice. The general terms and conditions of delivery of CT-Concept Technologie AG apply. Technical Support CONCEPT provides expert help for your questions and problems: Internet: www.IGBT-Driver.com/go/support Quality The obligation to high quality is one of the central features laid down in the mission statement of CT-Concept Technologie AG. The quality management system covers all stages of product development and production up to delivery. The drivers of the SCALE series are manufactured to the ISO 9001 standard. Page 12 CT-Concept.com IHD260/660 Preliminary Data Sheet Ordering Information Options Driver with 1W Average Gate Power per Channel N, C N, T I, C I, T Other Non-inverting, optocoupler-assisted driver for 1200V IGBTs Non-inverting driver for 1200V or 1700V IGBTs Inverting, optocoupler-assisted driver for 1200V IGBTs Inverting driver for 1200V or 1700V IGBTs Options Driver with 3W Average Gate Power per Channel N, C N, T I, C I, T Other Non-inverting, optocoupler-assisted driver for 1200V IGBTs Non-inverting driver for 1200V or 1700V IGBTs Inverting, optocoupler-assisted driver for 1200V IGBTs Inverting driver for 1200V or 1700V IGBTs Type designation IHD 260 NC1 IHD 260 NT1 IHD 260 IC1 IHD 260 IT1 Upon request Type designation IHD 660 NC1 IHD 660 NT1 IHD 660 IC1 IHD 660 IT1 Upon request Information about Other Products For other drivers and evaluation systems Internet: www.IGBT-Driver.com Manufacturer CT-Concept Technologie AG Intelligent Power Electronics Renferstrasse 15 CH-2504 Biel-Bienne Switzerland Tel. Fax +41 - 32 - 344 47 47 +41 - 32 - 344 47 40 E-mail Internet Info@IGBT-Driver.com www.IGBT-Driver.com © Copyright 1992…2008 by CT-Concept Technologie AG - Switzerland. We reserve the right to make any technical modifications without prior notice. IGBT-Driver.com All rights reserved. Version from 2016-05-20 Page 13