LQA40T200C, LQA40B200C
Qspeed™ Family
200 V, 40 A Common-Cathode Diode
Product Summary
IF(AVG) per diode
VRRM
QRR (Typ at 125 °C)
IRRM (Typ at 125 °C)
Softness tb/ta (Typ at 125 °C)
20
200
61
3.7
0.32
General Description
A
V
nC
A
Pin Assignment
This device has the lowest QRR of any 200 V
Silicon diode. Its recovery characteristics
increase efficiency, reduce EMI and eliminate
snubbers.
Applications
AC/DC and DC/DC output rectification
Output and freewheeling diodes
Motor drive circuits
DC-AC inverters
Features
TO-220AB
LQA40T200C
TO-263AB
A1
A2
LQA40B200C
K
RoHS Compliant
Package uses Lead-free plating and “Green” mold
compound Halogen free per IEC 61249-2-21.
Low QRR, Low IRRM, Low tRR
High dIF/dt capable (1000A/s)
Soft recovery
Benefits
Increases efficiency
Eliminates need for snubber circuits
Reduces EMI filter component size and count
Enables extremely fast switching
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional
operation under these conditions is not implied.
Symbol
Parameter
Conditions
VRRM
IF(AVG)
Peak repetitive reverse voltage
Average forward current
IFSM
Non-repetitive peak surge current
IFSM
Non-repetitive peak surge current
TJ
TSTG
Operating junction temperature range
Storage temperature
Lead soldering temperature
Power dissipation
PD
Rating
Units
TJ = 25 °C
Per Diode, TJ = 150 °C, TC = 116 °C
Per Device, TJ = 150 °C, TC = 116 °C
Per Diode, 60 Hz, ½ cycle
200
20
40
170
V
A
A
A
Per Diode, ½ cycle of t = 28 s
Sinusoid, TC = 25 °C
350
A
–55 to 150
–55 to 150
300
65.8
°C
°C
°C
W
Rating
Units
62
1.9
1.0
°C/W
°C/W
°C/W
Leads at 1.6mm from case, 10 sec
TC = 25 °C
Thermal Resistance
Symbol
Resistance from:
Conditions
RJA
Junction to ambient
RJC
Junction to case
TO-220AB (only)
Per Diode
Per Device
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April 2013
LQA40T200C, LQA40B200C
Electrical Specifications at TJ = 25 C (unless otherwise specified)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DC Characteristics per diode
IR
Reverse current per diode
VF
Forward voltage per diode
CJ
Junction capacitance per
diode
VR = 200 V, TJ = 25 °C
-
-
500
VR = 200 V, TJ = 125 °C
IF = 20 A, TJ = 25 °C
IF = 20 A, TJ = 150 °C
VR = 10 V, 1 MHz
-
1.0
1.0
0.875
74
1.2
-
A
mA
V
V
pF
Dynamic Characteristics per diode
tRR
Reverse recovery time,
per diode
dIF/dt = 200 A/s
VR = 130 V,
IF = 20 A
TJ = 25 °C
TJ = 125 °C
-
17
27
-
ns
ns
QRR
Reverse recovery charge,
per diode
dIF/dt = 200 A/s
VR = 130 V,
IF = 20 A
TJ = 25 °C
TJ = 125 °C
-
22
61
34
-
nC
nC
IRRM
Maximum reverse
recovery current, per
diode
TJ = 25 °C
TJ = 125 °C
-
2.14
3.7
3.15
-
A
A
S
t
Softness per diode = b
dIF/dt = 200 A/s
VR = 130 V,
IF = 20 A
dIF/dt = 200 A/s
VR = 130 V,
IF = 20 A
TJ = 25 °C
TJ = 125 °C
-
0.45
0.32
-
ta
Note to component engineers: Q-Series diodes employ Schottky technologies in their design and construction.
Therefore, component engineers should plan their test setups to be similar to traditional Schottky test setups.
(For further details, see application note AN-300.)
VR
D1
DUT
L1
tRR
IF
dIF/dt
ta
15V
Pulse generator
tb
+
Rg
Q1
0
0.1xIRRM
IRRM
2
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Rev 1.0 04/13
LQA40T200C, LQA40B200C
Electrical Specifications at TJ = 25 C (unless otherwise specified)
40
1.0
35
0.9
Tj=125C
0.7
25
0.6
20
IF (A)
IF (A)
Tj=125C
0.8
30
Tj=25C
15
0.5
0.4
0.3
10
Tj=25C
0.2
5
0.1
0
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.0
0.1
0.2
0.3
VF (V)
0.4
0.5
0.6
0.7
0.8
VF (V)
300
55
50
250
45
40
IF(AV) (A)
Cj (pF)
200
150
100
35
30
25
20
15
10
50
5
0
0
0
20
40
60
80
100
120
140
160
25
180
50
VR (V)
140
30
125
150
dIF/dt=200A/us
25
tRR (ns)
100
QRR (nC)
100
35
dIF/dt=500A/us
120
75
Case Temperature, TC (oC)
80
60
dIF/dt=200A/us
40
dIF/dt=500A/us
20
15
10
5
20
0
0
0
5
10
15
IF (A)
20
25
30
0
5
10
15
20
25
30
IF (A)
3
Rev 1.0 04/13
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LQA40T200C, LQA40B200C
70
60
40
IF(PEAK) (A)
P (W)
50
30
20
10
0
25
50
75
100
125
150
55
50
45
40
35
30
25
20
15
10
5
0
duty cycle=10%
duty cycle=30%
duty cycle=50%
DC
25
Case Temperature, TC (oC)
50
75
100
TC(°C)
125
150
LQA40x200C
1
D= 0.5
D = 0.3
D= 0.1
Zth(j-c)/Rth(j-c)
0.1
D= 0.05
D= 0.02
D= 0.01
D=0.005
0.01
D=0.002
Single Pulse
0.001
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
t1(sec)
4
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Rev 1.0 04/13
LQA40T200C, LQA40B200C
Dimensional Outline Drawings
TO-220AB
A
E
Q
øP
D
D1
L1
b2
L
b
c
e
e1
Millimeters
A1
A2
Dim
MIN
MAX
A
4.32
4.70
A1
1.11
1.38
A2
2.59
2.79
b
0.77
1.00
b2
1.23
1.36
C
0.34
0.47
D
14.71
15.75
D1
9.05
9.25
E
9.96
10.36
e
2.44
2.64
e1
4.98
5.18
L
12.70
14.22
L1
–
3.90
ØP
3.71
3.96
Q
2.54
2.90
Mechanical Mounting Method
Maximum Torque / Pressure specification
Screw through hole in package tab
Clamp against package body
1 Newton Meter (nm) or 8.8 inch-pounds (lb-in)
2
2
12.3 kilogram-force per square centimeter (kgf/cm ) or 175 lbf/in
Millimeters
TO-263AB
Dim
MIN
MAX
A
4.40
4.70
A1
0.00
0.25
A2
2.59
2.79
b
0.77
0.90
b2
1.23
1.36
c2
1.22
1.32
D
9.05
9.25
E
10.06
10.26
e
2.54 BSC
2.54 BSC
H
14.70
15.50
L
2.00
2.60
L1
1.17
1.40
L2
–
1.75
L3
0.25 BSC
0.25 BSC
L4
2.00 BSC
2.00 BSC
Θ
0°
8°
Θ1
5°
9°
Θ2
1°
5°
5
Rev 1.0 04/13
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LQA40T200C, LQA40B200C
Soldering time and temperature: This product has been designed for use with hightemperature, lead-free solder. The component leads can be subjected to a maximum
temperature of 300 °C, for up to 10 seconds. See Application Note AN-303, for more
details.
Ordering Information
Part Number
Package
Packing
LQA40T300C
LQA40B300C
TO-220AB
TO-263AB
50 units/tube
800 units/reel
The information contained in this document is subject to change without notice.
6
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Rev 1.0 04/13
LQA40T200C, LQA40B200C
Revision
1.0
Notes
Initial Release
Date
04/13
7
Rev 1.0 04/13
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LQA40T200C, LQA40B200C
For the latest updates, visit our website: www.powerint.com
Power Integrations reserves the right to make changes to its products at any time to improve reliability or
manufacturability. Power Integrations does not assume any liability arising from the use of any device or circuit
described herein. POWER INTEGRATIONS MAKES NO WARRANTY HEREIN AND SPECIFICALLY DISCLAIMS
ALL WARRANTIES INCLUDING, WITHOUT LIMITATION, THE IMPLIED WARRANTIES OF MERCHANTABILITY,
FITNESS FOR A PARTICULAR PURPOSE, AND NON-INFRINGEMENT OF THIRD PARTY RIGHTS.
PATENT INFORMATION
The products and applications illustrated herein (including transformer construction and circuits’ external to the
products) may be covered by one or more U.S. and foreign patents, or potentially by pending U.S. and foreign patent
applications assigned to Power Integrations. A complete list of Power Integrations’ patents may be found at
www.powerint.com. Power Integrations grants its customers a license under certain patent rights as set forth at
http://www.powerint.com/ip.htm.
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