LQA60A300C

LQA60A300C Qspeed™ Family 300 V, 60 A Q-Series Common-Cathode Diode Product Summary IF(AVG) per diode VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 30 300 53 2.85 0.6 A V nC A General Description This device has the lowest QRR of any 300V Silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Applications Pin Assignment • AC/DC and DC/DC output rectification • Output & freewheeling diodes • Motor drive circuits • DC-AC inverters A1 A1 K A2 Features K (Backside Heatsink) • Low QRR, Low IRRM, Low tRR • High dIF/dt capable (1000A/µs) • Soft recovery TO-247 AD A1 A2 K Benefits • Increases efficiency • Eliminates need for snubber circuits • Reduces EMI filter component size & count • Enables extremely fast switching RoHS Compliant Package uses Lead-free plating and Green mold compound.Halogen free per IEC 61249-2-21. Absolute Maximum Ratings Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Symbol VRRM IF(AVG) IFSM IFSM TJ TSTG PD Parameter Peak repetitive reverse voltage Average forward current Non-repetitive peak surge current Non-repetitive peak surge current Maximum junction temperature Storage temperature Lead soldering temperature Power dissipation Conditions Per Diode, TJ = 150 °C, TC = 99 °C Per Device, TJ = 150 °C, TC = 99 °C Per Diode, 60 Hz, ½ cycle Per Diode, ½ cycle of t = 28 µs Sinusoid, TC = 25 °C Rating 300 30 60 200 350 150 –55 to 150 300 113 Units V A A A A °C °C °C W Leads at 1.6mm from case, 10 sec TC = 25 °C Thermal Resistance Symbol RθJA RθJC Resistance from: Junction to ambient Junction to case Conditions Per Device Per Diode Per Device Rating 40 (Typ) 1.1 0.6 Units °C/W °C/W °C/W www.powerint.com January 2011 LQA60A300C Electrical Specifications at TJ= 25 °C (unless otherwise specified) Symbol IR VF CJ Parameter Reverse current per diode Forward voltage per diode Junction capacitance per diode Reverse recovery time, per diode Reverse recovery charge, per diode Maximum reverse recovery current, per diode Conditions VR = 300 V, TJ = 25 °C VR = 300 V, TJ = 125 °C IF = 30 A, TJ = 25 °C IF = 30 A, TJ = 150 °C VR = 10 V, 1 MHz Min - Typ 1.0 1.66 1.45 89 Max 250 1.95 - Units µA mA V V pF DC Characteristics per diode Dynamic Characteristics per diode tRR QRR IRRM dIF/dt =200 A/µs VR=200, IF=30 A dIF/dt =200 A/µs VR=200, IF=30 A dIF/dt =200 A/µs VR=200, IF=30 A dIF/dt =200 A/µs VR=200, IF=30 A TJ=25 °C TJ=125 °C TJ=25 °C TJ =125 °C TJ =25 °C TJ=125 °C TJ =25 °C TJ=125 °C 13.7 28.5 13 53 1.5 2.85 0.6 0.6 19 2.2 ns ns nC nC A A S t Softness per diode= b ta Note to component engineers: Q-Series diodes employ Schottky technologies in their design and construction. Therefore, component engineers should plan their test setups to be similar to traditional Schottky test setups. (For further details, see application note AN-300.) VR L1 D1 DUT IF dIF/dt 0 tRR ta tb 0.1xIRRM IRRM 15V Pulse generator + Rg Q1 Figure 1. Reverse Recovery Definitions Figure 2. Reverse Recovery Test Circuit 2 www.powerint.com Rev 1.1 01/11 LQA60A300C Electrical Specifications at TJ= 25 °C (unless otherwise specified) 60 55 50 45 40 35 30 25 20 15 10 5 0 0.0 0.5 1.0 VF (V) 1.0 0.9 0.8 Tj=125C Tj=125C IF (A) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Tj=25C IF (A) Tj=25C 1.5 2.0 0.0 0.1 0.2 0.3 0.4 0.5 VF (V) 0.6 0.7 0.8 0.9 1.0 Figure 3. Typical IF vs VF Figure 4. Typical IF vs VF 350 300 250 Cj (pF) 200 150 100 50 0 0 20 40 60 80 100 120 140 160 180 VR (V) 60 50 40 IF(AV) (A) 30 20 10 0 25 50 75 100 o 125 150 Case Temperature, TC ( C) Figure 5. Typical Cj vs VR Figure 6. DC Current Derating Curve 120 100 80 Q R R (nC) 60 40 20 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 I F (A) dIF /dt=200A/us dIF /dt=500A/us 35 30 25 20 15 10 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 I F (A) dIF /dt=200A/us tR R (ns) dIF /dt=500A/us Figure 7. Typical QRR vs IF at Tj=125 °C Figure 8. Typical tRR vs IF at Tj=125 °C 3 Rev 1.1 01/11 www.powerint.com LQA60A300C 120 100 80 P (W) 60 40 20 0 25 50 75 100 o 125 150 60 55 50 45 40 35 30 25 20 15 10 5 0 25 50 75 100 T C(°C) 125 duty cycle=10% duty cycle=30% duty cycle=50% DC IF(PEAK) (A) Case Temperature, TC ( C) 150 Figure 9. Power Derating Curve Figure 10. IF(Peak) vs TC, f=70 kHz LQA60A300C 1 D= 0.5 D = 0.3 D= 0.1 0.1 Zth(j-c)/Rth(j-c) D= 0.05 D= 0.02 D= 0.01 0.01 D=0.005 D=0.002 Single Pulse 0.001 1.E-06 1.E-05 1.E-04 1.E-03 t1(sec) 1.E-02 1.E-01 1.E+00 Figure 11. Normalized Maximum Transient Thermal Impedance 4 www.powerint.com Rev 1.1 01/11 LQA60A300C Dimensional Outline Drawings TO-247 AD Millimeters Dim A A1 A2 b b2 b4 c D D1 D2 E E1 E2 E3 e L L1 ØP ØP1 ØP2 Q S T U MIN 4.90 2.31 1.90 1.16 1.96 2.96 0.59 20.90 16.25 1.05 15.70 13.10 4.90 2.40 5.44BSC 19.80 3.50 2.40 5.60 6.15BSC 9.80 6.00 MAX 5.10 2.51 2.10 1.26 2.06 3.06 0.66 21.10 16.85 1.35 15.90 13.50 5.10 2.60 21.10 4.30 3.70 7.40 2.60 6.00 10.20 6.40 Mechanical Mounting Method Screw through hole in package tab Clamp against package body Maximum Torque / Pressure specification 1 Newton Meter (nm) or 8.8 inch-pounds (lb-in) 12.3 kilogram-force per square centimeter (kgf/cm2) or 175 lbf/in2 Soldering time and temperature: This product has been designed for use with hightemperature, lead-free solder. The component leads can be subjected to a maximum temperature of 300 °C, for up to 10 seconds. See Application Note AN-303, for more details. 5 Rev 1.1 01/11 www.powerint.com LQA60A300C Ordering Information Part Number LQA60A300C Package TO-247 Packing 30 units/tube The information contained in this document is subject to change without notice. 6 www.powerint.com Rev 1.1 01/11 LQA60A300C Revision 1.0 1.1 Notes Released by Qspeed Converted to Power Integrations Document Date 08/09 01/11 7 Rev 1.1 01/11 www.powerint.com LQA60A300C For the latest updates, visit our website: www.powerint.com Power Integrations reserves the right to make changes to its products at any time to improve reliability or manufacturability. Power Integrations does not assume any liability arising from the use of any device or circuit described herein. POWER INTEGRATIONS MAKES NO WARRANTY HEREIN AND SPECIFICALLY DISCLAIMS ALL WARRANTIES INCLUDING, WITHOUT LIMITATION, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, AND NON-INFRINGEMENT OF THIRD PARTY RIGHTS. PATENT INFORMATION The products and applications illustrated herein (including transformer construction and circuits external to the products) may be covered by one or more U.S. and foreign patents, or potentially by pending U.S. and foreign patent applications assigned to Power Integrations. A complete list of Power Integrations’ patents may be found at www.powerint.com. Power Integrations grants its customers a license under certain patent rights as set forth at http://www.powerint.com/ip.htm. The PI Logo, TOPSwitch, TinySwitch, LinkSwitch, DPA-Switch, PeakSwitch, CAPZero, SENZero, LinkZero, HiperPFS, HiperTFS, Qspeed, EcoSmart, Clampless, E-Shield, Filterfuse, StackFET, PI Expert and PI FACTS are trademarks of Power Integrations, Inc. Other trademarks are property of their respective companies. ©Copyright 2011 Power Integrations, Inc. Power Integrations Worldwide Sales Support Locations WORLD HEADQUARTERS 5245 Hellyer Avenue San Jose, CA 95138, USA. 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