QH03TZ600, QH03BZ600
Qspeed™ Family
600 V, 3 A H-Series PFC Diode
Product Summary
General Description
IF(AVG)
3
A
VRRM
600
V
QRR (Typ at 125 °C)
14.8
nC
IRRM (Typ at 125 °C)
1.35
A
Softness tB/tA (Typ at 125 °C)
1.1
Applications
• Power Factor Correction (PFC) boost diode
Pin Assignment
• Motor drive circuits
• DC-AC Inverters
NC
NC
K
C
C
NC
K
A
TO-220AC
TO-263AB
QH03TZ600
A
This device has the lowest QRR of any 600 V
silicon diode.
Its recovery characteristics
increase efficiency, reduce EMI and eliminate
snubbers.
QH03BZ600
K
RoHS Compliant
Features
• Low QRR, low IRRM, low tRR
• High dIF/dt capable (1000 A / µs)
• Soft recovery
Benefits
• Increases efficiency
• Eliminates need for snubber circuits
• Reduces EMI filter component size & count
• Enables extremely fast switching
Package uses Lead-free plating and
Green mold compound.
Halogen free per IEC 61249-2-21.
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional
operation under these conditions is not implied.
Symbol
Parameter
Conditions
VRRM
Peak repetitive reverse voltage
TJ = 25 °C
IF(AVG)
Average forward current
TJ = 150 °C, TC = 120 °C
IFSM
Non-repetitive peak surge current
IFSM
Non-repetitive peak surge current
TJ
Operating junction temperature range
TSTG
Rating
Units
600
V
3
A
60 Hz, ½ cycle, TC = 25 °C
35
A
½ cycle of t = 28 µs Sinusoid, TC = 25 °C
350
A
-55 to 150
°C
-55 to 150
°C
Lead soldering temperature
Storage temperature
Leads at 1.6 mm from case, 10 sec
300
°C
VISOL
Isolation voltage (leads-to-tab)
AC, TO-220
2500
V
VISOL
Isolation voltage (leads-to-tab)
AC, TO-263
1500
V
PD
Power dissipation
TC = 25 °C
30.4
W
www.power.com
November 2015
QH03TZ600, QH03BZ600
Thermal Resistance
Symbol
Resistance from:
RθJA
Junction to ambient
RθJC
Junction to case
Conditions
TO-220 (only)
Rating
Units
62
°C/W
4.1
°C/W
Electrical Specifications at TJ = 25 °C (unless otherwise specified)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DC Characteristics
IR
Reverse current
VF
Forward voltage
CJ
Junction capacitance
VR = 600 V, TJ = 25 °C
-
-
250
µA
VR = 600 V, TJ = 125 °C
-
0.22
-
mA
IF = 3 A, TJ = 25 °C
-
2.52
3.0
V
IF = 3 A, TJ = 150 °C
-
2.1
-
V
VR = 10 V, 1 MHz
-
11
-
pF
Dynamic Characteristics
tRR
Reverse recovery time
dI/dt = 200 A/µs
VR = 400 V, IF = 3 A
QRR
Reverse recovery
charge
dI/dt = 200 A/µs
VR = 400 V, IF = 3 A
Maximum reverse
recovery current
dI/dt = 200 A/µs
VR = 400 V, IF = 3 A
IRRM
Softness factor =
S
tB
tA
dI/dt = 200 A/µs
VR = 400 V, IF = 3 A
TJ = 25 °C
-
9.8
-
ns
TJ = 125 °C
-
16.1
-
ns
TJ = 25 °C
-
5.8
10
nC
TJ = 125 °C
-
14.8
-
nC
TJ = 25 °C
-
0.93
1.4
A
TJ = 125 °C
-
1.35
-
A
TJ = 25 °C
-
0.92
-
TJ = 125 °C
-
1.1
-
Note to component engineers: H-Series diodes employ Schottky technologies in their design and construction.
Therefore, Component Engineers should plan their test setups to be similar to those for traditional Schottky test
setups. (For additional details, see Application Note AN-300.)
tRR
IF
dIF/dt
ta
tb
0
0.1xIRRM
IRRM
Figure 1. Reverse Recovery Definitions.
Figure 2. Reverse Recovery Test Circuit.
2
Rev 1.3 11/15
QH03TZ600, QH03BZ600
35
12
11
10
9
8
7
6
5
4
3
2
1
0
30
25
Tj=125C
Cj (pF)
IF (A)
Electrical Specifications at TJ = 25 °C (unless otherwise specified)
Tj=25C
20
15
10
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
20
40
60
80
120
140
160
180
Figure 4. Typical CJ vs VR.
Figure 3. Typical IF vs. VF.
40
25
35
dIF /dt=1000A/us
30
dIF /dt=200A/us
20
dIF /dt=500A/us
25
tRR (ns)
QRR (nC)
100
VR (V)
VF (V)
20
15
dIF /dt=500A/us
15
10
dIF /dt=1000A/us
dIF /dt=200A/us
10
5
5
0
0
0
1
2
3
4
5
6
0
7
1
2
3
Figure 5. Typical QRR vs. IF at TJ = 125 °C.
5
6
7
Figure 6. Typical tRR vs. IF at TJ = 125 °C.
10
35
9
30
8
7
25
6
20
P (W)
IF(AV) (A)
4
IF (A)
IF (A)
5
4
15
10
3
2
5
1
0
0
25
50
75
100
125
o
Case Temperature, TC ( C)
Figure 7. DC Current Derating Curve.
3
Rev 1.3 11/15
150
25
50
75
100
125
o
Case Temperature, TC ( C)
Figure 8. Power Derating Curve.
150
QH03TZ600, QH03BZ600
duty cycle=10%
30
duty cycle=30%
duty cycle=50%
DC
25
IF(PEAK) (A)
20
15
10
5
0
25
50
75
100
T C(°C)
125
150
Figure 9. IF(PEAK) vs. TC, f = 70 kHz.
QH03TZ600
x
1
D= 0.5
D = 0.3
0.1
D= 0.1
Zth(j-c)/Rth(j-c)
D= 0.05
D= 0.02
0.01
D= 0.01
D=0.005
D=0.002
0.001
Single Pulse
0.0001
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
t1(sec)
Figure 10. Normalized Maximum Transient Thermal Impedance.
4
Rev 1.3 11/15
QH03TZ600, QH03BZ600
Dimensional Outline Drawing
TO-220AC
Millimeters
5
Rev 1.3 11/15
Dim
MIN
MAX
A
4.32
4.70
A1
1.14
1.40
A2
2.03
2.79
C
0.34
0.610
D
9.65
10.67
E
2.49
2.59
E1
4.98
5.18
F
0.508
1.016
F1
1.14
1.78
H
14.71
16.51
H1
5.84
6.795
H2
8.40
9.00
H3
3.53
3.96
H4
2.54
3.05
L
12.70
14.22
L1
-
6.35
QH03TZ600, QH03BZ600
Dimensional Outline Drawing
TO-263AB
Millimeters
Dim
MIN
MAX
A
4.40
4.70
A1
0.00
0.25
A2
2.59
2.79
b
0.77
0.90
b2
1.23
1.36
c2
1.22
1.32
D
9.05
9.25
E
10.06
10.26
e
2.54 BSC
2.54 BSC
H
14.70
15.50
L
2.00
2.60
L1
1.17
1.40
L2
–
1.75
L3
0.25 BSC
0.25 BSC
L4
2.00 BSC
2.00 BSC
Θ
0°
8°
Θ1
5°
9°
Θ2
1°
5°
Mechanical Mounting Method
Maximum Torque / Pressure specification
Screw through hole in package tab
1 Newton Meter (nm) or 8.8 inch-pounds (lb-in)
Clamp against package body
12.3 kilogram-force per square centimeter (kgf/cm2) or 175 lbf/in2
6
Rev 1.3 11/15
QH03TZ600, QH03BZ600
Footprint and Solder Pad Dimensions
Pad Dimensions in mm:
TO-263AB
Soldering time and temperature: This product has been designed for use with hightemperature, lead-free solder. The component leads can be subjected to a maximum
temperature of 300 °C, for up to 10 seconds. See Application Note AN-303, for more
details.
Ordering Information
Part Number
Package
Packing
QH03TZ600
TO-220AB
50 units/tube
QH03BZ600
TO-263AB
800 units/reel
The information contained in this document is subject to change without notice.
7
Rev 1.3 11/15
QH03TZ600, QH03BZ600
Revision
1.0
1.1
1.2
1.3
Notes
Released by Qspeed
Converted to Power Integrations Document
Added QH03BZ600
Updated with new Brand Style. Added footprint and solder pad dimension
for TO-263AB package.
Date
01/10
01/11
02/13
11/15
8
Rev 1.3 11/15
QH03TZ600, QH03BZ600
For the latest updates, visit our website: www.power.com
Power Integrations reserves the right to make changes to its products at any time to improve reliability or manufacturability. Power
Integrations does not assume any liability arising from the use of any device or circuit described herein. POWER INTEGRATIONS
MAKES NO WARRANTY HEREIN AND SPECIFICALLY DISCLAIMS ALL WARRANTIES INCLUDING, WITHOUT LIMITATION, THE IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, AND NON-INFRINGEMENT OF THIRD PARTY RIGHTS.
Patent Information
The products and applications illustrated herein (including transformer construction and circuits’ external to the products) may be
covered by one or more U.S. and foreign patents, or potentially by pending U.S. and foreign patent applications assigned to Power
Integrations. A complete list of Power Integrations’ patents may be found at www.power.com. Power Integrations grants its
customers a license under certain patent rights as set forth at http://www.power.com/ip.htm.
Life Support Policy
POWER INTEGRATIONS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF POWER INTEGRATIONS. As used herein:
1.
A Life support device or system is one which, (i) is intended for surgical implant into the body, or (ii) supports or sustains
life, and (iii) whose failure to perform, when properly used in accordance with instructions for use, can be reasonably
expected to result in significant injury or death to the user.
2.
A critical component is any component of a life support device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
The PI Logo, TOPSwitch, TinySwitch, LinkSwitch, LYTSwitch, InnoSwitch, DPA-Switch, PeakSwitch, CAPZero, SENZero, LinkZero, HiperPFS, HiperTFS,
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9
Rev 1.3 11/15