PSB125

Single Phase Rectifier Bridges Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSB 125/08 PSB 125/12 PSB 125/14 PSB 125/16 PSB 125/18 PSB 125 IdAVM VRRM = 124A = 800-1800 V ~ ~ Maximum Ratings 124 1800 1950 1600 1800 16200 16000 12800 13600 -40 ... + 150 150 -40 ... + 150 A A A A A A2 s A2 s A2 s A2 s °C °C °C V∼ V∼ Nm Nm g Symbol IdAVM IFSM Test Conditions TC = 85°C, module TVJ = 45°C t = 10 ms (50 Hz), sine VR = 0 t = 8.3 ms (60 Hz), sine TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine ∫ i2 dt TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 Features • Package with screw terminals • Isolation voltage 3000 V∼ • Planar glasspassivated chips • Blocking voltage up to 1800 V • Low forward voltage drop • UL registered E 148688 Applications • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability Package, style and outline Dimensions in mm (1mm = 0.0394“) TVJ TVJM Tstg VISOL Md Weight 50/60 HZ, RMS IISOL ≤ 1 mA t = 1 min t=1s (M5) (M5) 2500 3000 5 5 235 Mounting torque Terminal connection torque typ. Symbol IR VF VTO rT RthJC RthJK dS dA a Test Conditions VR = VRRM VR = VRRM TVJ = 25°C TVJ = TVJM Characteristic Value ≤ ≤ ≤ 0.3 8.0 1.3 0.8 3 0.83 0.21 1.13 0.28 17.6 17.6 50 mA mA V V mΩ K/W K/W K/W K/W mm mm m/s2 IF = 150 A TVJ = 25°C For power-loss calculations only TVJ = TVJM per diode; DC current per module per diode; DC current per module Creeping distance on surface Creeping distance in air Max. allowable acceleration POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20  2003 POWERSEM reserves the right to change limits, test conditions and dimensions PSB 125 IF(OV) -----IFSM 200 A 10 IFSM (A) TVJ=45°C TVJ=150°C 1800 1600 5 2 As 160 T=150°C 1.6 1.4 1.2 1 120 80 40 IF 10 4 TVJ=45°C TVJ=150°C 0 VRRM 0.8 1/2 VRRM T=25°C 0.6 0.4 10 0 10 1 1 VRRM 0 VF 10 3 1 2 4 t [ms] 6 10 1 1.5 V t[ms] 10 2 10 3 Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 80 Fig. 3 ∫i2dt versus time (1-10ms) per diode (or thyristor) 300 [W] 250 TC PSB 125 85 90 95 0.19 0.11 0.28 = RTHCA [K/W] 150 [A] 100 200 0.44 105 110 115 100 DC sin.180° rec.120° rec.60° rec.30° 150 0.77 120 125 100 50 DC sin.180° rec.120° rec.60° rec.30° 50 IFAVM 100 [A] 0 Tamb 50 100 [K] 150 1.77 130 135 140 145 150 50 PVTOT 0 IdAV 0 50 100 TC(°C) 150 200 °C Fig. 4 Power dissipation versus direct output current and ambient temperature 1.5 K/W Z thJK Fig.5 Maximum forward current at case temperature 1 Z thJC 0.5 Zth 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20  2003 POWERSEM reserves the right to change limits, test conditions and dimensions