PSB192

Single Phase Rectifier Bridges Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSB 192/08 PSB 192/12 PSB 192/14 PSB 192/16 PSB 192/18 PSB 192 IdAV VRRM = 174 A = 800-1800 V ~ ~ Maximum Ratings 174 2800 3300 2500 2750 39200 45000 31200 31300 -40 ... + 150 150 -40 ... + 125 A A A A A A2 s A2 s A2 s A2 s °C °C °C V∼ V∼ Nm Nm g Symbol IdAV IFSM Test Conditions TC = 100°C, module TVJ = 45°C t = 10 ms (50 Hz), sine VR = 0 t = 8.3 ms (60 Hz), sine TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine ∫ i2 dt TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 Features • Package with screw terminals • Isolation voltage 3000 V∼ • Planar glasspassivated chips • Blocking voltage up to 1800 V • Low forward voltage drop • UL registered E 148688 Applications • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability Package, style and outline Dimensions in mm (1mm = 0.0394“) TVJ TVJM Tstg VISOL Md Weight 50/60 HZ, RMS IISOL ≤ 1 mA t = 1 min t=1s (M6) (M6) 2500 3000 5 5 270 Mounting torque Terminal connection torque typ. Symbol IR VF VTO rT RthJC RthJK dS dA a Test Conditions VR = VRRM VR = VRRM TVJ = 25°C TVJ = TVJM Characteristic Value ≤ ≤ ≤ 0.3 5 1.43 0.8 2.2 0.45 0.11 0.6 0.15 10 9.4 50 mA mA V V mΩ K/W K/W K/W K/W mm mm m/s2 IF = 150 A TVJ = 25°C For power-loss calculations only TVJ = TVJM per diode; DC current per module per diode; DC current per module Creeping distance on surface Creeping distance in air Max. allowable acceleration POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20  2005 POWERSEM reserves the right to change limits, test conditions and dimensions PSB 192 IF(OV) -----IFSM 200 [A] IFSM (A) TVJ=45°C TVJ=150°C 2800 2500 5 10 2 As TVJ=45°C TVJ=150°C 10 4 1.6 150 1.4 100 1.2 1 0 VRRM 50 IF 0 Tvj = 150°C Tvj = 25°C 2 0.8 1/2 VRRM 0.6 0.4 0 10 1 VRRM 10 0.5 1 1.5 VF [V] 1 2 10 t[ms] 10 3 10 3 1 2 4 t [ms] 6 10 Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration TC 0.15 0.09 0.21 = RTHCA [K/W] 90 95 100 105 85 Fig. 3 ∫i2dt versus time (1-10ms) per diode (or thyristor) 400 [W] 350 300 250 200 150 100 50 PVTOT 0 PSB 192 200 [A] 150 DC sin.180° rec.120° rec.60° rec.30° 0.34 110 115 100 0.59 120 125 130 DC sin.180° rec.120° rec.60° rec.30° 50 IFAVM 100 150 0 [A] 50 IdAV 0 50 100 150 200 1.34 135 140 °C Tamb 50 100 [K] 150 145 150 Fig. 4 Power dissipation versus direct output current and ambient temperature Fig.5 Maximum forward current at case temperature 1 K/W Z thJK 0.5 Z thJC Z th 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20  2005 POWERSEM reserves the right to change limits, test conditions and dimensions