PSB55

Single Phase Rectifier Bridge Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSB 55/08 PSB 55/12 PSB 55/14 PSB 55/16 PSB 55/18 PSB 55 IdAVM VRRM = 50 A = 800-1800 V ~ ~ Symbol IdAVM IFSM Test Conditions TC = 64°C, module TVJ = 45°C t = 10 ms (50 Hz), sine VR = 0 t = 8.3 ms (60 Hz), sine TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 50 750 820 670 740 2800 2820 2250 2300 -40 ... + 150 150 -40 ... + 150 A A A A A A2 s A2 s A2 s A2 s °C °C °C V∼ V∼ Nm Nm g ∫ i2 dt TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 Features • Package with screw terminals • Isolation voltage 3000 V∼ • Planar glasspassivated chips • Blocking voltage up to 1800 V • Low forward voltage drop • UL registered E 148688 Applications • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability Package, style and outline Dimensions in mm (1mm = 0.0394“) TVJ TVJM Tstg VISOL Md Weight 50/60 HZ, RMS IISOL ≤ 1 mA t = 1 min t=1s (M5) (M5) 2500 3000 5 3 200 Mounting torque Terminal connection torque typ. Symbol IR VF VTO rT RthJC RthJK dS dA a Test Conditions VR = VRRM VR = VRRM TVJ = 25°C TVJ = TVJM Characteristic Value ≤ ≤ ≤ 0.3 10.0 1.6 0.85 8 2.6 0.65 2.84 0.71 7.8 7.8 50 mA mA V V mΩ K/W K/W K/W K/W mm mm m/s2 IF = 150 A TVJ = 25°C For power-loss calculations only TVJ = TVJM per diode; DC current per module per diode; DC current per module Creeping distance on surface Creeping distance in air Max. allowable acceleration POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20  2003 POWERSEM reserves the right to change limits, test conditions and dimensions PSB 55 200 [A] 150 1:TVJ= 150°C 2:TVJ= 25°C IF(OV) -----IFSM IFSM (A) TVJ=45°C TVJ=150°C 750 670 4 10 2 As 1.6 1.4 TVJ=45°C 100 1.2 1 10 3 TVJ=150°C 50 IF 0 0.5 1 0 VRRM 0.8 1/2 VRRM 2 1 1.5 VF[V] 2 2.5 0.6 0.4 10 1 VRRM 10 2 1 2 4 t [ms] 6 10 0 10 1 t[ms] 10 2 10 3 Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 85 90 95 100 105 Fig. 3 ∫i2dt versus time (1-10ms) per diode (or thyristor) 100 [W] 80 70 [A] PSB 55 TC 0.6 0.35 0.85 = RTHCA [K/W] 50 DC sin.180° rec.120° re c.60° .30° 60 1.35 110 115 120 40 DC sin.180° rec.120° rec.60° rec.30° 10 IFAVM 30 [A] 0 2.35 125 130 30 20 PVTOT 0 5.35 135 140 145 150 °C 10 IdAV 0 50 100 T C(°C) 150 20 Tamb 50 100 [K] 150 Fig. 4 Power dissipation versus direct output current and ambient temperature 4 K/W Fig.5 Maximum forward current at case temperature 3 Z thJK Z thJC 2 1 Z th 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20  2003 POWERSEM reserves the right to change limits, test conditions and dimensions