PSBH125

Single Phase Half Controlled Bridges PSBH 125 IdAV VRRM = 123 A = 400-1600 V Preliminary Data Sheet VRSM VDSM 500 900 1300 1500 *1700 VRRM VDRM 400 800 1200 1400 *1600 Type PSBH 125/04 PSBH 125/08 PSBH 125/12 PSBH 125/14 PSBH 125/16 ~ ~ * Delivery on request Symbol IdAV IFSM, ITSM Test Conditions TC = 85 °C, module TVJ = 45°C t = 10 ms (50 Hz), sine VR = 0 t = 8.3 ms (60 Hz), sine TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 123 1500 1600 1350 1450 11 200 10 750 9100 8830 150 A A A A A A2 s A2 s A2 s A2 s A/µs Features • Package with screw terminals • Isolation voltage 3000 V∼ • Planar glasspassivated chips • Low forward voltage drop • UL released, E 148688 Applications • Heat and temperature control for industrial furnaces and chemical processes • Lighting control • Motor control • Power converter ∫ i2 dt TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 (di/dt)cr TVJ = TJVM repetitive, IT = 50 A f = 400Hz, tP = 200µs VD = 2/3 VDRM . non repetitive, IT = 1/3 IdAV IG = 0.3 A diG/dt = 0.3 A/µs 500 1000 ≤ ≤ 10 5 0.5 A/µs V/µs W W W V °C °C °C V∼ V∼ Nm Nm g (dv/dt)cr PGM PGAVM VRGM TVJ TVJM Tstg VISOL Md Weight TVJ = TVJM VDR = 2/3 VDRM RGK = ∞, method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tP = 30µs tP = 500µs Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability • High power density Package, style and outline Dimensions in mm (1mm = 0.0394“) 10 -40 ... + 125 125 -40 ... + 125 50/60 HZ, RMS IISOL ≤ 1 mA t = 1 min t=1s (M6) (M6) 2500 3000 5 5 270 Mounting torque Terminal connection torque typ. POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20  2003 POWERSEM reserves the right to change limits, test conditions and dimensions PSBH 125 Symbol ID, IR VT VTO rT VGT IGT VGD IGD IL IH tgd tq RthJC RthJK dS dA a Test Conditions Characteristic Value 5 1.57 0.85 3.5 1.5 1.6 100 200 0.2 5 450 200 2 150 0.46 0.115 0.55 0.1375 10 9.4 50 mA V V mΩ V V mA mA V mA mA mA µs µs K/W K/W K/W K/W mm mm m/s2 TVJ = TVJM, VR = VRRM, VD = VDRM ≤ IT = 200A, TVJ = 25°C ≤ For power-loss calculations only (TVJ = TVJM) VD = 6V VD = 6V TVJ = TVJM TVJ = TVJM TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C VD = 2/3 VDRM VD = 2/3 VDRM ≤ ≤ ≤ ≤ ≤ ≤ ≤ ≤ ≤ TVJ = 25°C, tP = 30µs IG = 0.3A, diG/dt = 0.3A/µs TVJ = 25°C, VD = 6V, RGK = ∞ TVJ = 25°C, VD = ½ VDRM IG = 0.3A, diG/dt = 0.3A/µs TVJ = TVJM, IT = 20A, tP = 200µs, VR = 100V -di/dt = 10A/µs, dv/dt = 15V/µs, VD = 2/3 VDRM per thyristor; sine 180°el per module per thyristor; sine 180° el per module Creeping distance on surface Creeping distance in air Max. allowable acceleration 300 [A] 250 1:T = 125°C VJ 2:TVJ= 25°C us T =25°C VJ IT(OV) -----ITSM ITSM (A) TVJ=45°C TVJ=150°C 1500 1350 1.6 200 100 1.4 Limit 150 t gd Typ. 1.2 1 100 10 0 VRRM 0.8 50 I F 0 0.5 1 1 VF[V] 0.6 1/2 VRRM 1 VRRM 2 1.5 2 1 10 100 I [mA] G 1000 0.4 0 10 1 2 10 t[ms] 10 3 10 Fig. 1 Forward current vs. voltage drop per diode or thyristor Fig. 2 Gate trigger delay time Fig. 3 Surge overload current per diode (or thyristor) IFSM, ITSM: Crest value t: duration POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20  2003 POWERSEM reserves the right to change limits, test conditions and dimensions PSBH 125 10 V 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10W 6 5 4 140 DC [A] 120 sin.180° rec.120° rec.60° 100 rec.30° 80 1 60 40 VG 2 1 3 20 ITAV 0 50 100 T (°C) C 150 200 0.1 10 0 10 1 IG 10 2 10 3 mA 10 4 Fig.4 Gate trigger characteristic Fig.5 Maximum forward current at case temperature K/W 0.8 0.6 Z thJK Z thJC 0.4 0.2 Z th 0.01 0.1 t[s] 1 10 Fig.6 Transient thermal impedance per thyristor or diode (calculated) 400 [W] 350 300 250 200 150 100 50 PVTOT 0 25 ITAVM 75 DC sin.180° rec.120° rec.60° rec.30° 125 0 [A] 0.51 PSBH 125 80 0.13 0.07 = RTHCA [K/W] 0.2 TC 85 90 95 0.3 100 105 110 1.13 115 120 °C Tamb 50 100 [K] 150 125 Fig. 7 Power dissipation vs. direct output current and ambient temperature POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20  2003 POWERSEM reserves the right to change limits, test conditions and dimensions