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PSBH55

PSBH55

  • 厂商:

    POWERSEM

  • 封装:

  • 描述:

    PSBH55 - Single Phase Half Controlled Bridges - Powersem GmbH

  • 数据手册
  • 价格&库存
PSBH55 数据手册
Single Phase Half Controlled Bridges PSBH 55 ITAVM VRRM = 46A = 400-1600 V Preliminary Data Sheet VRSM VDSM 500 900 1300 1500 *1700 VRRM VDRM 400 800 1200 1400 *1600 Type PSBH 55/04 PSBH 55/08 PSBH 55/12 PSBH 55/14 PSBH 55/16 ~ ~ * Delivery on request Symbol Test Conditions per module t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 46 520 560 460 500 1350 1300 1050 1030 100 A A A A A A2 s A2 s A2 s A2 s A/µs ITAVM, IFAVM TC = 85 °C TVJ = 45°C ITSM, IFSM VR = 0 TVJ = TVJM VR = 0 Features • Package with screw terminals • Isolation voltage 3000 V∼ • Planar glasspassivated chips • Low forward voltage drop • UL registered E 148688 Applications • Heat and temperature control for industrial furnaces and chemical processes • Lighting control • Motor control • Power converter ∫ i2 dt TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 (di/dt)cr TVJ = TJVM repetitive, IT = 150 A f = 50Hz, tP = 200µs VD = 2/3 VDRM IG = 0.3 A non repetitive, IT = ITAVM diG/dt = 0.3 A/µs 500 1000 10 5 0.5 10 -40 ... + 125 125 -40 ... + 125 A/µs V/µs W W W V °C °C °C V∼ V∼ Nm Nm Nm g (dv/dt)cr PGM PGAVM VRGM TVJ TVJM Tstg VISOL Md TVJ = TVJM VDR = 2/3 VDRM RGK = ∞, method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tP = 30µs tP = 300µs Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability • High power density Package, style and outline Dimensions in mm (1mm = 0.0394“) 50/60 HZ, RMS IISOL ≤ 1 mA t = 1 min t=1s (M5) (M3) (M5) 2500 3000 5 1.5 5 220 Mounting torque Terminal connection torque typ. Weight POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20  2005 POWERSEM reserves the right to change limits, test conditions and dimensions PSBH 55 Symbol ID, IR VT VTO rT VGT IGT VGD IGD IL IH tgd tq RthJC RthJK dS dA a Test Conditions Characteristic Value 5 1.65 0.85 11 1.0 1.6 100 150 0.2 5 200 150 2 150 1.2 0.3 1.31 0.327 8.0 4.5 50 mA V V mΩ V V mA mA V mA mA mA µs µs K/W K/W K/W K/W mm mm m/s2 TVJ = TVJM, VR = VRRM, VD = VDRM ≤ IT = 150A, TVJ = 25°C ≤ For power-loss calculations only (TVJ = TVJM) VD = 6V VD = 6V TVJ = TVJM TVJ = TVJM TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C VD = 2/3 VDRM VD = 2/3 VDRM ≤ ≤ ≤ ≤ ≤ ≤ ≤ ≤ ≤ TVJ = 25°C, tP = 10µs IG = 0.3A, diG/dt = 0.3A/µs TVJ = 25°C, VD = 6V, RGK = ∞ TVJ = 25°C, VD = ½ VDRM IG = 0.3A, diG/dt = 0.3A/µs TVJ = TVJM, IT = 20A, tP = 200µs, VR = 100V -di/dt = 10A/µs, dv/dt = 15V/µs, VD = 2/3 VDRM per thyristor; sine 180°el per module per thyristor; sine 180° el per module Creeping distance on surface Creeping distance in air Max. allowable acceleration 200 [A] 150 1:T VJ = 25°C us T VJ =25°C IT(OV) -----ITSM ITSM (A) TVJ=45°C TVJ=150°C 460 520 2:TVJ = 125°C 100 1.6 1.4 100 1 2 tgd 1.2 1 10 0 VRRM 50 IF 0 0 .5 1 V 1.5 [V] 2 1 10 100 I [mA] G 1000 0.8 1/2 VRRM 0.6 1 VRRM 0.4 0 10 1 10 t[ms] 2 10 3 10 Fig. 1 Forward current vs. voltage drop per diode or thyristor Fig. 2 Gate trigger delay time Fig. 3 Surge overload current per diode (or thyristor) IFSM, ITSM: Crest value t: duration POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20  2005 POWERSEM reserves the right to change limits, test conditions and dimensions PSBH 55 10 V 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10W 6 5 4 60 [A] 50 DC sin.180° rec.120° rec.60° rec.30° 40 1 30 20 VG 2 1 3 10 ITAV 0 50 100 TC(°C) 150 200 0.1 10 0 10 1 IG 10 2 10 3 mA 10 4 Fig.4 Gate trigger characteristic Fig.5 Maximum forward current at case temperature K/W 1.6 Z thJK Z thJC 1.2 0.8 0.4 Z th 0.01 0.1 t[s] 1 10 Fig.6 Transient thermal impedance per thyristor or diode (calculated) 200 [W] 175 150 125 100 75 50 25 PVTOT 0 ITAVM 20 DC sin.180° rec.120° rec.60° rec.30° 40 [A] 0 0.95 PSBH 55 TC 0.2 0.07 = RTHCA [K/W] 0.32 70 75 80 85 65 0.53 90 95 100 105 110 2.2 115 120 °C Tamb 50 100 [K] 150 125 Fig. 7 Power dissipation vs. direct output current and ambient temperature POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20  2005 POWERSEM reserves the right to change limits, test conditions and dimensions
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