0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
PSBZ50

PSBZ50

  • 厂商:

    POWERSEM

  • 封装:

  • 描述:

    PSBZ50 - Single Phase Half Controlled Bridges - Powersem GmbH

  • 数据手册
  • 价格&库存
PSBZ50 数据手册
Single Phase Half Controlled Bridges Preliminary Data Sheet VRSM VDSM 500 900 1300 1500 *1700 VRRM VDRM 400 800 1200 1400 *1600 Type PSBZ 50/04 PSBZ 50/08 PSBZ 50/12 PSBZ 50/14 PSBZ 50/16 PSBZ 50 IdAV VRRM = 53 A = 400-1600 V ~ ~ * Delivery on request Symbol IdAV ITSM, IFSM Test Conditions TC = 85 °C TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 180° sine, per module t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 53 550 600 500 550 1520 1520 1250 1250 150 A A A A A A2 s A2 s As A2 s A/µs 2 Features • Package with fast-on terminals • Isolation voltage 3000 V∼ • Planar glasspassivated chips • Low forward voltage drop • UL registered E 148688 Applications • Heat and temperature control for industrial furnaces and chemical processes • Lighting control • Motor control • Power converter ∫ i dt 2 TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 (di/dt)cr TVJ = TJVM repetitive, IT = 50 A f = 50Hz, tP = 200µs VD = 2/3 VDRM IG = 0.3 A non repetitive, IT = ½ IdAV diG/dt = 0.3 A/µs . 500 1000 ≤ ≤ 10 5 0.5 A/µs V/µs W W W V °C °C °C V∼ V∼ Nm g (dv/dt)cr PGM PGAVM VRGM TVJ TVJM Tstg VISOL Md Weight TVJ = TVJM VDR = 2/3 VDRM RGK = ∞, method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tP = 30µs tP = 500µs Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability • High power density Package, style and outline Dimensions in mm (1mm = 0.0394“) 10 -40 ... + 125 125 -40 ... + 125 50/60 HZ, RMS IISOL ≤ 1 mA Mounting torque typ. t = 1 min t=1s (M5) 2500 3000 2 - 2.5 100 POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20  2002 POWERSEM reserves the right to change limits, test conditions and dimensions PSBZ 50 Symbol ID, IR VT, VF VTO rT VGT IGT VGD IGD IL IH tgd tq RthJC RthJK dS dA a Test Conditions Characteristic Value 5 1.64 0.85 11 1.5 1.6 100 200 0.2 5 450 200 2 250 0.9 0.225 1.1 0.275 16.1 7.1 50 mA V V mΩ V V mA mA V mA mA mA µs µs K/W K/W K/W K/W mm mm m/s2 TVJ = TVJM, VR = VRRM, VD = VDRM ≤ IT, IF = 80A, TVJ = 25°C ≤ For power-loss calculations only (TVJ = TVJM) VD = 6V VD = 6V TVJ = TVJM TVJ = TVJM TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C VD = 2/3 VDRM VD = 2/3 VDRM ≤ ≤ ≤ ≤ ≤ ≤ ≤ ≤ ≤ TVJ = 25°C, tP = 10µs IG = 0.45A, diG/dt = 0.45A/µs TVJ = 25°C, VD = 6V, RGK = ∞ TVJ = 25°C, VD = ½ VDRM IG = 0.45A, diG/dt = 0.45A/µs TVJ = TVJM, IT = 20A, tP = 200µs, VR = 100V -di/dt = 10A/µs, dv/dt = 15V/µs, VD = 2/3 VDRM per thyristor/Diode; DC per module per thyristor/Diode; DC per module Creeping distance on surface Creeping distance in air Max. allowable acceleration 200 T [A] 150 1:T VJ = 25°C VJ =25°C IF(OV) -----IFSM us IFSM (A) TVJ=45°C TVJ=150°C 550 490 2:T VJ = 125°C 100 1.6 1.4 1.2 1 10 100 1 tgd 2 0 VRRM 50 IF 0 0.5 1 1.5 2 VF [V] 1 10 100 I [mA] G 1000 0.8 1/2 VRRM 0.6 0.4 0 10 1 VRRM 1 2 10 t[ms] 10 3 10 Fig. 1 Forward current vs. voltage drop per diode or thyristor Fig. 2 Gate trigger delay time Fig. 3 Surge overload current per diode (or thyristor) IFSM, ITSM: Crest value t: duration POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20  2002 POWERSEM reserves the right to change limits, test conditions and dimensions PSBZ 50 10 V 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10W 6 70 [A] 60 50 40 DC sin.180° rec.120° rec.60° rec.30° 1 30 5 4 VG 20 10 ITAV 0 50 100 TC (°C) 150 200 2 1 3 0.1 10 0 10 1 IG 10 2 10 3 mA 10 4 Fig.4 Gate trigger characteristic Fig.5 Maximum forward current at case temperature K/W 1.2 1 0.8 0.6 0.4 0.2 Z thJK Z thJC Z th 0.01 0.1 t[s] 1 10 Fig.6 Transient thermal impedance per thyristor or diode (calculated) 200 [W] 175 150 125 100 75 50 25 PVTOT 0 10 ITAVM 30 DC sin.180° rec.120° rec.60° rec.30° 0 50 [A] 1.02 105 110 PSBZ50 80 0.28 0.15 = RTHCA [K/W] 0.4 TC 85 90 95 0.61 100 2.27 115 120 °C Tamb 50 100 [K] 150 125 Fig. 7 Power dissipation vs. direct output current and ambient temperature POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20  2002 POWERSEM reserves the right to change limits, test conditions and dimensions
PSBZ50 价格&库存

很抱歉,暂时无法提供与“PSBZ50”相匹配的价格&库存,您可以联系我们找货

免费人工找货